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Publications Michael Waltl

127 records


Books and Editorships


2. M. Waltl:
"Robust Microelectronic Devices";
MDPI, (2022), ISBN: 978-3-0365-3337-7, 130 page(s) doi:10.3390/books978-3-0365-3338-4. BibTeX

1. M. Waltl:
"Editorial for the Special Issue on Robust Microelectronic Devices";
Crystals, 12, (2022), 16-1 - 16-3 doi:10.3390/cryst12010016. BibTeX


Publications in Scientific Journals


45. T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
"Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning";
Nature Electronics, 5, (2022), 356 - 366 doi:10.1038/s41928-022-00768-0. BibTeX

44. M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser:
"Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models";
Materials Science Forum, 1062, (2022), 688 - 695 doi:10.4028/p-pijkeu. BibTeX

43. M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser:
"Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?";
Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX

42. C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser:
"Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture";
Microelectronics Reliability, 139, (2022), doi:10.1016/j.microrel.2022.114801. BibTeX

41. N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard:
"Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications";
Electronics, 10, (2021), 1718-1 - 1718-16 doi:10.3390/electronics10141718. BibTeX

40. Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl:
"Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies";
Crystals, 11, (2021), 1150-1 - 1150-9 doi:10.3390/cryst11091150. BibTeX

39. M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX

38. T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
"The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX

37. J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
"Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
IEEE Transactions on Electron Devices, 68, (2021), 6372 - 6378 doi:10.1109/TED.2021.3117740. BibTeX

36. J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
"Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
IEEE Transactions on Electron Devices, 68, (2021), 6365 - 6371 doi:10.1109/TED.2021.3116931. BibTeX

35. C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
"Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
IEEE Transactions on Electron Devices, 68, (2021), 4016 - 4021 doi:10.1109/TED.2021.3092295. BibTeX

34. A. Shah, N. Gupta, M. Waltl:
"High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs";
Analog Integrated Circuits and Signal Processing, 109, (2021), 657 - 671 doi:10.1007/s10470-021-01924-w. BibTeX

33. A. Shah, M. Waltl:
"Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits";
International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34, (2021), e2854-1 - e2854-13 doi:10.1002/jnm.2854. BibTeX

32. K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl:
"On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors";
IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX

31. D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser:
"Toward Automated Defect Extraction From Bias Temperature Instability Measurements";
IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX

30. M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser:
"Impact of Single-Defects on the Variability of CMOS Inverter Circuits";
Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX

29. M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities";
IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX

28. A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl:
"Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit";
Microelectronics Reliability, 107, (2020), 113617 doi:10.1016/j.microrel.2020.113617. BibTeX

27. A. Shah, M. Waltl:
"Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM";
Electronics, 9, (2020), 256-1 - 256-12 doi:10.3390/electronics9020256. BibTeX

26. B. Stampfer, F. Schanovski, T. Grasser, M. Waltl:
"Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors";
Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX

25. B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
"Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX

24. M. Waltl:
"Reliability of Miniaturized Transistors from the Perspective of Single-Defects";
Micromachines, 11, (invited) (2020), 736-1 - 736-21 doi:10.3390/mi11080736. BibTeX

23. M. Waltl:
"Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors";
IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 242 - 250 doi:10.1109/TDMR.2020.2988650. BibTeX

22. M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser:
"Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors";
Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX

21. A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser:
"Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs";
Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX

20. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
"Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX

19. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
"Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX

18. M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
"Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX

17. B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser:
"Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental";
IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX

16. B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser:
"Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques";
IEEE Transactions on Device and Materials Reliability, 19, (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993. BibTeX

15. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser:
"A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability";
Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX

14. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"A Physical Model for the Hysteresis in MoS2 Transistors";
IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX

13. G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
"Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX

12. B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX

11. Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX

10. Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
"Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX

9. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX

8. R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
"Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX

7. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX

6. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part II: Theory";
IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX

5. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX

4. Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX

3. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX

2. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX

1. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
"NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX


Contributions to Books


5. M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser:
"Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models";
in "Silicon Carbide and Related Materials 2021", J. Michaud, L. Phung, D. Alquier, D. Planson (ed); Trans Tech Publications Ltd , Switzerland, 2022, ISBN: 9783035727609, 688 - 695 doi:10.1002/adma.202201082. BibTeX

4. B. Stampfer, A. Grill, M. Waltl:
"Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 229 - 257 doi:10.1007/978-3-030-37500-3_7. BibTeX

3. D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser:
"Atomistic Modeling of Oxide Defects";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX

2. A. Shah, A. Moshrefi, M. Waltl:
"Utilizing NBTI for Operation Detection of Integrated Circuits";
in "VLSI Design and Test, Communications in Computer and Information Science", 1066, A. Sengupta, S. Dasgupta, V. Singh, R. Sharma, S. Vishvakarma (ed); Springer Singapore, 2019, ISBN: 978-981-32-9767-8, 190 - 201 doi:10.1007/978-981-32-9767-8_17. BibTeX

1. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


66. C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser:
"Ab-Initio Study of Multi-State Defects in Amorphous SiO2";
Talk: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 2022-08-22 - 2022-08-25; in "PSI-K 2022: abstracts book", (2022), 264. BibTeX

65. Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser:
"CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators";
Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX

64. M. Jech, T. Grasser, M. Waltl:
"The Importance of Secondary Generated Carriers in Modeling of Full Bias Space";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online; 2022-03-06 - 2022-03-09; in "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)", (2022), 265 - 267 doi:10.1109/EDTM53872.2022.9798262. BibTeX

63. M. Stephanie, M. Waltl, T. Grasser, B. SchrenkSchrenk:
"WDM-Conscious Synaptic Receptor Assisted by SOA+EAM";
Talk: 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, USA; 2022-03-05 - 2022-03-09; in "2022 Optical Fiber Communications Conference and Exhibition (OFC)", (2022), . BibTeX

62. J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
"Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX

61. M. Waltl:
"Impact of Defects in Semiconductor Transistors on Devices and Circuits";
Talk: International Meet on Nanotechnology (NANOMEET), Porto, Portugal; (invited) 2021-09-13 - 2021-09-15; in "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), 93. BibTeX

60. M. Kampl, H. Kosina, M. Waltl:
"Improved Sampling Algorithms for Monte Carlo Device Simulation";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 53 - 54. BibTeX

59. S. Naz, A. Shah, S. Ahmed, G. Patrick, M. Waltl:
"Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata";
Poster: IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual); 2021-05-24 - 2021-05-28; in "Proceedings of the IEEE European Test Symposium (ETS)", (2021), doi:10.1109/ETS50041.2021.9465459. BibTeX

58. T. Grasser, B. O´Sullivan, B. Kaczer, J. Franco, B. Stampfer, M. Waltl:
"CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States";
Talk: IEEE International Reliability Physics Symposium (IRPS), virtual; 2021-03-21 - 2021-03-24; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7, 1 - 6 doi:10.1109/IRPS46558.2021.9405184. BibTeX

57. M. Waltl:
"Spectroscopy of Single Defects in Semiconductor Transistors";
Talk: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual; (invited) 2020-11-05 - 2020-11-06; in "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020), . BibTeX

56. K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl:
"Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871. BibTeX

55. A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
"Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX

54. D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser:
"Machine Learning Prediction of Formation Energies in a-SiO2";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX

53. Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser:
"Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N";
Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX

52. T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
"The Impact of the Graphene Work Function on the Stability of Flexible GFETs";
Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX

51. Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser:
"Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation";
Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX

50. T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
"Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures";
Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX

49. T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl:
"The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX

48. A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu:
"Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX

47. J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl:
"Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX

46. M. Waltl:
"Defect Spectroscopy in SiC Devices";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; (invited) 2020-04-28 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 9 doi:10.1109/IRPS45951.2020.9129539. BibTeX

45. M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993630. BibTeX

44. C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
"Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX

43. A. Shah, M. Waltl:
"Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits";
Talk: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 2019-11-27 - 2019-11-29; in "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), 197 - 200 doi:10.1109/ICECS46596.2019.8964962. BibTeX

42. J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier:
"IIRW 2019 Discussion Group II: Reliability for Aerospace Applications";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4 doi:10.1109/IIRW47491.2019.8989910. BibTeX

41. B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
"Statistical Characterization of BTI and RTN using Integrated pMOS Arrays";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904. BibTeX

40. D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser:
"Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX

39. M. Waltl:
"Characterization and Modeling of Single Charge Trapping in MOS Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; (invited) 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 9 doi:10.1109/IIRW47491.2019.8989880. BibTeX

38. Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser:
"Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio";
Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 2018-06-24 - 2018-06-27; in "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0, doi:10.1109/DRC.2018.8442242. BibTeX

37. T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer:
"Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX

36. Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser:
"Reliability of next-generation field-effect transistors with transition metal dichalcogenides";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX

35. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX

34. Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser:
"Encapsulated MoS2 FETs with Improved Performance and Reliability";
Talk: GRAPCHINA, Nanjing, China; 2017-09-24 - 2017-09-26; in "Proceedings of the GRAPCHINA 2017", (2017), 1 page(s) . BibTeX

33. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"Physical Modeling of the Hysteresis in MoS2 Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX

32. B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
"The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX

31. T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer:
"Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX

30. A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser:
"Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX

29. Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser:
"Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338. BibTeX

28. G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser:
"Efficient Physical Defect Model Applied to PBTI in High-κ Stacks";
Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX

27. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX

26. Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
"A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX

25. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
"Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209. BibTeX

24. Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
"Temperature-dependent Hysteresis in Black Phosphorus FETs";
Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), . BibTeX

23. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX

22. Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543. BibTeX

21. M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
"Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX

20. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538 doi:10.1109/IEDM.2015.7409739. BibTeX

19. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651. BibTeX

18. Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741. BibTeX

17. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
"Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279. BibTeX

16. B. Ullmann, M. Waltl, T. Grasser:
"Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 2015-06-25 - 2015-06-26; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37. BibTeX

15. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX

14. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834. BibTeX

13. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) . BibTeX

12. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778. BibTeX

11. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX

10. W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567. BibTeX

9. T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös:
"Evidence for Defect Pairs in SiON pMOSFETs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 228 - 263. BibTeX

8. T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
"A unified perspective of RTN and BTI";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7. BibTeX

7. M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser:
"A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5. BibTeX

6. T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer:
"Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620. BibTeX

5. T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer:
"Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637. BibTeX

4. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer:
"Recent Advances in Understanding Oxide Traps in pMOS Transistors";
Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96. BibTeX

3. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser:
"Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX

2. T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer:
"Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX

1. M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser:
"Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79. BibTeX


Talks and Poster Presentations (without Proceedings-Entry)


3. Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser:
"Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs";
Talk: Graphne 2022, Aachen, Germany; 2022-07-05 - 2022-07-08; . BibTeX

2. Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects: from Si to MoS2 FETs";
Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX

1. Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser:
"Reliability Perspective of 2D Electronics";
Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX


Doctor's Theses (authored and supervised)


1. M. Waltl:
"Experimental Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
Reviewer: T. Grasser, D. Schmitt-Landsiedel; Institut für Mikroelektronik, 2016, oral examination: 2016-09-09 doi:10.34726/hss.2016.38201. BibTeX


Diploma and Master Theses (authored and supervised)


5. M. Kratzmann:
"Entwicklung eines rauscharmen CV Messmoduls für die Defektspektroskopie von MOS Transistoren";
Supervisor: T. Grasser, M. Waltl; E360, 2021, final examination: 2021-11-18. BibTeX

4. C. Schleich:
"Charakterisierung und Modellierung von SiC Transistoren";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019, final examination: 2019-01-25. BibTeX

3. P. Fleischanderl:
"Charakterisierung von Hot Carrier Degradation in Siliziumtransistoren";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2018, final examination: 2018-11-26. BibTeX

2. M. Huymajer:
"Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2016, final examination: 2016-06-16. BibTeX

1. M. Waltl:
"Change Point Detection in Time Dependent Defect Spectroscopy Data";
Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2011, final examination: 2011-11-25. BibTeX

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Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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