Publications Michael Waltl

143 records

Publications in Scientific Journals

48.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2023).
Over- And Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (A-Si3N4).
Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 (reposiTUm)

47.   Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M. (2023).
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors.
IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 (reposiTUm)

46.   Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab Initio Investigations in Amorphous Silicon Dioxide: Proposing a Multi-State Defect Model for Electron and Hole Capture.
Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm)

45.   Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022).
Improving Stability in Two-Dimensional Transistors With Amorphous Gate Oxides by Fermi-Level Tuning.
Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm)

44.   Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., Grasser, T. (2022).
Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models.
Materials Science Forum, 1062, 688–695. https://doi.org/10.4028/p-pijkeu (reposiTUm)

43.   Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022).
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

42.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory.
IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm)

41.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental.
IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm)

40.   Gupta, N., Shah, A. P., Khan, S., Vishvakarma, S. K., Waltl, M., Girard, P. (2021).
Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications.
Electronics, 10(14), 1718. https://doi.org/10.3390/electronics10141718 (reposiTUm)

39.   Shah, A. P., Gupta, N., Waltl, M. (2021).
High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs.
Analog Integrated Circuits and Signal Processing, 109(3), 657–671. https://doi.org/10.1007/s10470-021-01924-w (reposiTUm)

38.   Hernandez, Y., Stampfer, B., Grasser, T., Waltl, M. (2021).
Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.
Crystals, 11(9), 1150. https://doi.org/10.3390/cryst11091150 (reposiTUm)

37.   Shah, A. P., Waltl, M. (2021).
Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34(3). https://doi.org/10.1002/jnm.2854 (reposiTUm)

36.   Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

35.   Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

34.   Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021).
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors.
IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm)

33.   Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., Waltl, M. (2021).
Physical Modeling of Charge Trapping in 4h-SiC DMOSFET Technologies.
IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 (reposiTUm)

32.   Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2021).
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices.
Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 (reposiTUm)

31.   Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021).
The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials.
Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm)

30.   Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021).
Toward Automated Defect Extraction From Bias Temperature Instability Measurements.
IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm)

29.   Shah, A. P., Waltl, M. (2020).
Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM.
Electronics, 9(2), 256. https://doi.org/10.3390/electronics9020256 (reposiTUm)

28.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2020).
Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays.
IEEE Transactions on Device and Materials Reliability, 20(2), 251–257. https://doi.org/10.1109/tdmr.2020.2985109 (reposiTUm)

27.   Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020).
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities.
IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm)

26.   Waltl, M. (2020).
Reliability of Miniaturized Transistors From the Perspective of Single-Defects.
Micromachines, 11(8), 736. https://doi.org/10.3390/mi11080736 (reposiTUm)

25.   Stampfer, B., Schanovsky, F., Grasser, T., Waltl, M. (2020).
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.
Micromachines, 11(4). https://doi.org/10.3390/mi11040446 (reposiTUm)

24.   Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., Grasser, T. (2020).
Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors.
Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 (reposiTUm)

23.   Shah, A. P., Rossi, D., Sharma, V., Vishvakarma, S. K., Waltl, M. (2020).
Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit.
Microelectronics Reliability, 107(113617), 113617. https://doi.org/10.1016/j.microrel.2020.113617 (reposiTUm)

22.   Waltl, M. (2020).
Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors.
IEEE Transactions on Device and Materials Reliability, 20(2), 242–250. https://doi.org/10.1109/tdmr.2020.2988650 (reposiTUm)

21.   Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019).
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-Mis-HEMTs.
Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm)

20.   Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., Grasser, T. (2019).
Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques.
IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 (reposiTUm)

19.   Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental.
IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm)

18.   Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory.
IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

17.   Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Reliability of Scalable MoS2 FETs With 2 Nm Crystalline CaF2 Insulators.
2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 (reposiTUm)

16.   Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors.
Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 (reposiTUm)

15.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T. (2018).
A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability.
Microelectronics Reliability, 81, 186–194. https://doi.org/10.1016/j.microrel.2017.11.022 (reposiTUm)

14.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018).
A Physical Model for the Hysteresis in MoS2 Transistors.
IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

13.   Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

12.   Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018).
Comphy -- A Compact-Physics Framework for Unified Modeling of BTI.
Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm)

11.   Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., Grasser, T. (2017).
Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs.
IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 (reposiTUm)

10.   Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017).
Energetic Mapping of Oxide Traps in MoS₂ Field-Effect Transistors.
2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm)

9.   Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017).
Highly-Stable Black Phosphorus Field-Effect Transistors With Low Density of Oxide Traps.
Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm)

8.   Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., Grasser, T. (2017).
Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation.
IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 (reposiTUm)

7.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part I: Experimental.
IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm)

6.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part II: Theory.
IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm)

5.   Illarionov, Y. Yu., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., Grasser, T. (2016).
Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors.
Japanese Journal of Applied Physics, 55(4S), 04EP03. https://doi.org/10.7567/jjap.55.04ep03 (reposiTUm)

4.   Illarionov, Y. Y., Waltl, M., Rzepa, G., Kim, J.-S., Kim, S., Dodabalapur, A., Akinwande, D., Grasser, T. (2016).
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
ACS Nano, 10(10), 9543–9549. https://doi.org/10.1021/acsnano.6b04814 (reposiTUm)

3.   Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Goes, W., Grasser, T. (2016).
The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits.
Solid-State Electronics, 125, 52–62. https://doi.org/10.1016/j.sse.2016.07.010 (reposiTUm)

2.   Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016).
The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors.
2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

1.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Kaczer, B. (2014).
NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark.
IEEE Transactions on Electron Devices, 61(11), 3586–3593. https://doi.org/10.1109/ted.2014.2353578 (reposiTUm)

Contributions to Books

5.   Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K. A., Stampfer, B., Reisinger, H., Grasser, T. (2022).
Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models.
In J. F. Michaud, L. V. Phung, D. Alquier, D. Planson (Eds.), Silicon Carbide and Related Materials 2021 (pp. 688–695). Trans Tech Publications Ltd , Switzerland. (reposiTUm)

4.   Stampfer, B., Grill, A., Waltl, M. (2020).
Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals.
In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 229–257). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_7 (reposiTUm)

3.   Waldhoer, D., El-Sayed, A.-M. B., Wimmer, Y., Waltl, M., Grasser, T. (2020).
Atomistic Modeling of Oxide Defects.
In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 609–648). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_18 (reposiTUm)

2.   Shah, A. P., Moshrefi, A., Waltl, M. (2019).
Utilizing NBTI for Operation Detection of Integrated Circuits.
In A. Sengupta, S. Dasgupta, V. Singh, R. Sharma, S. K. Vishvakarma (Eds.), Communications in Computer and Information Science (pp. 190–201). Springer Singapore. https://doi.org/10.1007/978-981-32-9767-8_17 (reposiTUm)

1.   Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., Grasser, T. (2017).
(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors.
In D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

69.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂.
In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm)

68.   Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H).
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm)

67.   Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab-Initio Study of Multi-State Defects in Amorphous SiO2.
In PSI-K 2022: abstracts book (p. 264), Lausanne, Switzerland. (reposiTUm)

66.   Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022).
CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators.
In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, United States. (reposiTUm)

65.   Tselios, K., Knobloch, T., Michl, J., Waldhör, D., Schleich, C., Ioannidis , E., Enichlmair , H., Minixhofer , R., Grasser, T., Waltl, M. (2022).
Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors.
In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032748 (reposiTUm)

64.   Jech, M., Grasser, T., Waltl, M. (2022).
The Importance of Secondary Generated Carriers in Modeling of Full Bias Space.
In 2022 6th IEEE Electron Devices Technology, Manufacturing Conference (EDTM), Japan. https://doi.org/10.1109/edtm53872.2022.9798262 (reposiTUm)

63.   Stephanie, M., Waltl, M., Grasser, T., Schrenk, B. (2022).
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM.
In Optical Fiber Communication Conference (OFC) 2022, San Diego, California, United States. https://doi.org/10.1364/ofc.2022.m1g.2 (reposiTUm)

62.   Grasser, T., O'Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., Waltl, M. (2021).
CV Stretch-Out Correction After Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
In 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, United States. https://doi.org/10.1109/irps46558.2021.9405184 (reposiTUm)

61.   Naz, S., Shah, A., Ahmed, S., Patrick, G., Waltl, M. (2021).
Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum Dot Cellular Automata.
In 2021 IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual). https://doi.org/10.1109/ets50041.2021.9465459 (reposiTUm)

60.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

59.   Waltl, M. (2021).
Impact of Defects in Semiconductor Transistors on Devices and Circuits.
In Proceedings of the International Meet on Nanotechnology (NANOMEET) (p. 93), Porto, Portugal. (reposiTUm)

58.   Kampl, M., Kosina, H., Waltl, M. (2021).
Improved Sampling Algorithms for Monte Carlo Device Simulation.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 53–54). (reposiTUm)

57.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

56.   Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020).
Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation.
In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm)

55.   Waltl, M. (2020).
Defect Spectroscopy in SiC Devices.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129539 (reposiTUm)

54.   Tselios, K., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Waltl, M. (2020).
Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312871 (reposiTUm)

53.   Illarionov, Y., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T. (2020).
Low Variability and 1010 on/Off Current Ratio in Flexible MoS2 FETs With Al2O3 Encapsulation Improved by Parylene N.
In Proceedings of the Electronic Materials Conference (EMC) (p. 25), Columbus, OH, USA - virtual. (reposiTUm)

52.   Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., Grasser, T. (2020).
Machine Learning Prediction of Defect Formation Energies in A-SiO₂.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241609 (reposiTUm)

51.   Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020).
Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm)

50.   Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020).
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128349 (reposiTUm)

49.   Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I. (2020).
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128316 (reposiTUm)

48.   Waltl, M. (2020).
Spectroscopy of Single Defects in Semiconductor Transistors.
In Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual. (reposiTUm)

47.   Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T. (2020).
The Impact of the Graphene Work Function on the Stability of Flexible GFETs.
In Proceedings of the Electronic Materials Conference (EMC), Columbus, OH, USA - virtual. (reposiTUm)

46.   Grasser, T., Kaczer, B., O'Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M. (2020).
The Mysterious Bipolar Bias Temperature Stress From the Perspective of Gate-Sided Hydrogen Release.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129198 (reposiTUm)

45.   Waltl, M. (2019).
Characterization and Modeling of Single Charge Trapping in MOS Transistors.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989880 (reposiTUm)

44.   Jech, M., Tyaginov, S., Kaczer, B., Franco, J., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2019).
First–Principles Parameter–Free Modeling of N– And P–FET Hot–Carrier Degradation.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993630 (reposiTUm)

43.   Scharlotta, J., Bersuker, G., Tyaginov, S., Young, C., Haase, G., Rzepa, G., Waltl, M., Chohan, T., Iyer, S., Kotov, A., Zambelli, C., Guarin, F., Puglisi, F., Ostermaier, C. (2019).
IIRW 2019 Discussion Group II: Reliability for Aerospace Applications.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989910 (reposiTUm)

42.   Shah, A., Waltl, M. (2019).
Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits.
In 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Genova, Italy. https://doi.org/10.1109/icecs46596.2019.8964962 (reposiTUm)

41.   Waldhoer, D., Wimmer, Y., El-Sayed, A., Goes, W., Waltl, M., Grasser, T. (2019).
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989889 (reposiTUm)

40.   Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S., Grasser, T., Waltl, M. (2019).
Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993446 (reposiTUm)

39.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2019).
Statistical Characterization of BTI and RTN Using Integrated pMOS Arrays.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989904 (reposiTUm)

38.   Illarionov, Y., Smithe, K., Waltl, M., Grady, R., Deshmukh, S., Pop, E., Grasser, T. (2018).
Annealing and Encapsulation of CVD-MoS2 FETs With 1010On/Off Current Ratio.
In 2018 76th Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc.2018.8442242 (reposiTUm)

37.   Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B. (2018).
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting From NBTI/PBTI Stress in nMOS/pMOS Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2A.2-1–2A.2-10), Waikoloa, HI, USA. (reposiTUm)

36.   Illarionov, Y., Molina- Mendoza, A., Waltl, M., Knobloch, T., Furchi, M., Mueller, T., Grasser, T. (2018).
Reliability of Next-Generation Field-Effect Transistors With Transition Metal Dichalcogenides.
In 2018 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2018.8353605 (reposiTUm)

35.   Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017).
Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs.
In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm)

34.   Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017).
Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm)

33.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

32.   Illarionov, Y., Waltl, M., Smithe, K., Pop, E., Grasser, T. (2017).
Encapsulated MoS2 FETs With Improved Performance and Reliability.
In Proceedings of the GRAPCHINA 2017 (p. 1), Nanjing, China. (reposiTUm)

31.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017).
Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors.
In Meeting Abstracts (p. 2), Honolulu, Austria. (reposiTUm)

30.   Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B. (2017).
Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up After BTI Stress.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 6A-2.1–6A-2.6), Waikoloa, HI, USA. (reposiTUm)

29.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

28.   Illarionov, Y., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T. (2017).
Reliability of Black Phosphorus Field-Effect Transistors With Respect to Bias-Temperature and Hot-Carrier Stress.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936338 (reposiTUm)

27.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

26.   Illarionov, Y., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T. (2016).
A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs.
In 74#^{th }Device Research Conference Digest (pp. 89–90), Santa Barbara , California, Austria. (reposiTUm)

25.   Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T. (2016).
Complete Extraction of Defect Bands Responsible for Instabilities in N and pFinFETs.
In 2016 Symposium on VLSI Technology Digest of Technical Papers (pp. 208–209), Kyoto, Japan. (reposiTUm)

24.   Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016).
Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm)

23.   Illarionov, Y., Waltl, M., Furchi, M., Mueller, T., Grasser, T. (2016).
Reliability of Single-Layer MoS<inf>2</inf> Field-Effect Transistors With SiO<inf>2</inf> And hBN Gate Insulators.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2016.7574543 (reposiTUm)

22.   Illarionov, Y., Waltl, M., Kim, J., Akinwande, D., Grasser, T. (2016).
Temperature-Dependent Hysteresis in Black Phosphorus FETs.
In Proceedings of the 2016 Graphene Week, Delft, Netherlands. (reposiTUm)

21.   Grasser, T., Waltl, M., Rzepa, G., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Reisinger, H., Kaczer, B. (2016).
The “permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574504 (reposiTUm)

20.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 650–651), Fukuoka, Japan. (reposiTUm)

19.   Ullmann, B., Waltl, M., Grasser, T. (2015).
Characterization of the Permanent Component of MOSFET Degradation Mechanisms.
In Proceedings of the 2015 Vienna Young Scient Symposium (pp. 36–37), Wien, Austria. (reposiTUm)

18.   Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes.
In 2015 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2015.7409739 (reposiTUm)

17.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015).
Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112834 (reposiTUm)

16.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063778 (reposiTUm)

15.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Interplay Between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324741 (reposiTUm)

14.   Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Grasser, T. (2015).
Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292279 (reposiTUm)

13.   Grasser, T., Waltl, M., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112739 (reposiTUm)

12.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors.
In Abstracts Graphene 2015 (p. 1), Bilbao, Spain. (reposiTUm)

11.   Waltl, M., Gös, W., Rott, K., Reisinger, H., Grasser, T. (2014).
A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT18.1–XT18.5), Phoenix. (reposiTUm)

10.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Franco, J., Kaczer, B. (2014).
A Unified Perspective of RTN and BTI.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 4A.5.1–4A.5.7), Phoenix. (reposiTUm)

9.   Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T. (2014).
Advanced Modeling of Charge Trapping: RTN, 1/F Noise, SILC, and BTI.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931567 (reposiTUm)

8.   Grasser, T., Rzepa, G., Waltl, M., Goes, W., Rott, K., Rott, G., Reisinger, H., Franco, J., Kaczer, B. (2014).
Characterization and Modeling of Charge Trapping: From Single Defects to Devices.
In 2014 IEEE International Conference on IC Design & Technology, Austin, TX, USA. https://doi.org/10.1109/icicdt.2014.6838620 (reposiTUm)

7.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Gös, W. (2014).
Evidence for Defect Pairs in SiON pMOSFETs.
In Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 228–263), Singapore. (reposiTUm)

6.   Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014).
On the Microscopic Structure of Hole Traps in pMOSFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

5.   Grasser, T., Rott, K., Reisinger, H., Wagner, P., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B. (2013).
Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

4.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B. (2013).
Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724637 (reposiTUm)

3.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B. (2013).
Recent Advances in Understanding Oxide Traps in pMOS Transistors.
In Proceedings of 2013 IWDTF (pp. 95–96), Tokyo, Japan. (reposiTUm)

2.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P., Grasser, T. (2013).
Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

1.   Waltl, M., Wagner, P., Reisinger, H., Rott, K., Grasser, T. (2012).
Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI.
In IEEE International Integrated Reliability Workshop Final Report (pp. 74–79), California. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

5.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29).
Charged Instrinsic Defect States in Amorphous Si3N4
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

4.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30).
Intrinsic Charge Trapping Sites in Amorphous Si₃N₄
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

3.   Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2022).
Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs.
Graphne 2022, Aachen, Germany. (reposiTUm)

2.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

1.   Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017).
Reliability Perspective of 2D Electronics.
International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm)

Doctor's Theses (authored and supervised)

8.   Tselios, K. (2024).
Statistical Analysis of Reliability and Variability Effects in CMOS Technologies Based on Single-Defect Spectroscopy
Technische Universität Wien. https://doi.org/10.34726/hss.2024.120226 (reposiTUm)

7.   Michl, J. D. (2022).
Charge Trapping and Variability in CMOS Technologies at Cryogenic Temperatures
Technische Universität Wien. https://doi.org/10.34726/hss.2022.105545 (reposiTUm)

6.   Schleich, C. (2022).
Modeling of Defect Related Reliability Phenomena in SiC Power-MOSFETs
Technische Universität Wien. https://doi.org/10.34726/hss.2022.105546 (reposiTUm)

5.   Stampfer, B. (2020).
Advanced Electrical Characterization of Charge Trapping in MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2020.86423 (reposiTUm)

4.   Rzepa, G. (2018).
Efficient Physical Modeling of Bias Temperature Instability
Technische Universität Wien. https://doi.org/10.34726/hss.2018.57326 (reposiTUm)

3.   Ullmann, B. (2018).
Mixed Negative Bias Temperature Instability and Hot-Carrier Stress
Technische Universität Wien. https://doi.org/10.34726/hss.2018.57328 (reposiTUm)

2.   Illarionov, Y. (2016).
Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2016.34580 (reposiTUm)

1.   Waltl, M. (2016).
Experimental Characterization of Bias Temperature Instabilities in Modern Transistor Technologies
Technische Universität Wien. https://doi.org/10.34726/hss.2016.38201 (reposiTUm)

Diploma and Master Theses (authored and supervised)

6.   Kratzmann, M. (2021).
Development of a Low-Noise CV Measurement Module for Defect-Spectroscopy of MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2021.78782 (reposiTUm)

5.  M. Kratzmann:
"Entwicklung eines rauscharmen CV Messmoduls für die Defektspektroskopie von MOS Transistoren";
Supervisor: T. Grasser, M. Waltl; E360, 2021; final examination: 2021-11-18.

4.   Schleich, C. (2019).
Charakterisierung Und Modellierung Von SiC Transistoren
Technische Universität Wien. (reposiTUm)

3.   Fleischanderl, P. (2018).
Charakterisierung Von Hot Carrier Degradation in Siliziumtransistoren
Technische Universität Wien. (reposiTUm)

2.   Huymajer, M. (2016).
Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS
Technische Universität Wien. https://doi.org/10.34726/hss.2016.33851 (reposiTUm)

1.   Waltl, M. (2011).
Change Point Detection in Time Dependent Defect Spectroscopy Data
Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-60036 (reposiTUm)