Publications Michael Waltl
127 records
| 2. | M. Waltl: "Robust Microelectronic Devices"; MDPI, (2022), ISBN: 978-3-0365-3337-7, 130 page(s) doi:10.3390/books978-3-0365-3338-4. BibTeX |
| 1. | M. Waltl: "Editorial for the Special Issue on Robust Microelectronic Devices"; Crystals, 12, (2022), 16-1 - 16-3 doi:10.3390/cryst12010016. BibTeX |
| 45. | T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning"; Nature Electronics, 5, (2022), 356 - 366 doi:10.1038/s41928-022-00768-0. BibTeX |
| 44. | M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser: "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models"; Materials Science Forum, 1062, (2022), 688 - 695 doi:10.4028/p-pijkeu. BibTeX |
| 43. | M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser: "Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?"; Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX |
| 42. | C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser: "Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture"; Microelectronics Reliability, 139, (2022), doi:10.1016/j.microrel.2022.114801. BibTeX |
| 41. | N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard: "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications"; Electronics, 10, (2021), 1718-1 - 1718-16 doi:10.3390/electronics10141718. BibTeX |
| 40. | Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl: "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies"; Crystals, 11, (2021), 1150-1 - 1150-9 doi:10.3390/cryst11091150. BibTeX |
| 39. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices"; Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX |
| 38. | T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX |
| 37. | J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental"; IEEE Transactions on Electron Devices, 68, (2021), 6372 - 6378 doi:10.1109/TED.2021.3117740. BibTeX |
| 36. | J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser: "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory"; IEEE Transactions on Electron Devices, 68, (2021), 6365 - 6371 doi:10.1109/TED.2021.3116931. BibTeX |
| 35. | C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl: "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies"; IEEE Transactions on Electron Devices, 68, (2021), 4016 - 4021 doi:10.1109/TED.2021.3092295. BibTeX |
| 34. | A. Shah, N. Gupta, M. Waltl: "High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs"; Analog Integrated Circuits and Signal Processing, 109, (2021), 657 - 671 doi:10.1007/s10470-021-01924-w. BibTeX |
| 33. | A. Shah, M. Waltl: "Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits"; International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34, (2021), e2854-1 - e2854-13 doi:10.1002/jnm.2854. BibTeX |
| 32. | K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl: "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors"; IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX |
| 31. | D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX |
| 30. | M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX |
| 29. | M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX |
| 28. | A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl: "Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit"; Microelectronics Reliability, 107, (2020), 113617 doi:10.1016/j.microrel.2020.113617. BibTeX |
| 27. | A. Shah, M. Waltl: "Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM"; Electronics, 9, (2020), 256-1 - 256-12 doi:10.3390/electronics9020256. BibTeX |
| 26. | B. Stampfer, F. Schanovski, T. Grasser, M. Waltl: "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors"; Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX |
| 25. | B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX |
| 24. | M. Waltl: "Reliability of Miniaturized Transistors from the Perspective of Single-Defects"; Micromachines, 11, (invited) (2020), 736-1 - 736-21 doi:10.3390/mi11080736. BibTeX |
| 23. | M. Waltl: "Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 242 - 250 doi:10.1109/TDMR.2020.2988650. BibTeX |
| 22. | M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser: "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors"; Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX |
| 21. | A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX |
| 20. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser: "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors"; Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX |
| 19. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser: "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators"; 2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX |
| 18. | M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX |
| 17. | B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental"; IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX |
| 16. | B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser: "Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993. BibTeX |
| 15. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser: "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability"; Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX |
| 14. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX |
| 13. | G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser: "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI"; Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX |
| 12. | B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX |
| 11. | Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX |
| 10. | Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser: "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation"; IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX |
| 9. | Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX |
| 8. | R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX |
| 7. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part I: Experimental"; IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX |
| 6. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part II: Theory"; IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX |
| 5. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX |
| 4. | Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser: "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors"; ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX |
| 3. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors"; Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX |
| 2. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits"; Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX |
| 1. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer: "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark"; IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX |
| 5. | M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser: "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models"; in "Silicon Carbide and Related Materials 2021", J. Michaud, L. Phung, D. Alquier, D. Planson (ed); Trans Tech Publications Ltd , Switzerland, 2022, ISBN: 9783035727609, 688 - 695 doi:10.1002/adma.202201082. BibTeX |
| 4. | B. Stampfer, A. Grill, M. Waltl: "Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals"; in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 229 - 257 doi:10.1007/978-3-030-37500-3_7. BibTeX |
| 3. | D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser: "Atomistic Modeling of Oxide Defects"; in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX |
| 2. | A. Shah, A. Moshrefi, M. Waltl: "Utilizing NBTI for Operation Detection of Integrated Circuits"; in "VLSI Design and Test, Communications in Computer and Information Science", 1066, A. Sengupta, S. Dasgupta, V. Singh, R. Sharma, S. Vishvakarma (ed); Springer Singapore, 2019, ISBN: 978-981-32-9767-8, 190 - 201 doi:10.1007/978-981-32-9767-8_17. BibTeX |
| 1. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX |
| 66. | C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser: "Ab-Initio Study of Multi-State Defects in Amorphous SiO2"; Talk: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 2022-08-22 - 2022-08-25; in "PSI-K 2022: abstracts book", (2022), 264. BibTeX |
| 65. | Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser: "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators"; Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX |
| 64. | M. Jech, T. Grasser, M. Waltl: "The Importance of Secondary Generated Carriers in Modeling of Full Bias Space"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online; 2022-03-06 - 2022-03-09; in "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)", (2022), 265 - 267 doi:10.1109/EDTM53872.2022.9798262. BibTeX |
| 63. | M. Stephanie, M. Waltl, T. Grasser, B. SchrenkSchrenk: "WDM-Conscious Synaptic Receptor Assisted by SOA+EAM"; Talk: 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, USA; 2022-03-05 - 2022-03-09; in "2022 Optical Fiber Communications Conference and Exhibition (OFC)", (2022), . BibTeX |
| 62. | J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX |
| 61. | M. Waltl: "Impact of Defects in Semiconductor Transistors on Devices and Circuits"; Talk: International Meet on Nanotechnology (NANOMEET), Porto, Portugal; (invited) 2021-09-13 - 2021-09-15; in "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), 93. BibTeX |
| 60. | M. Kampl, H. Kosina, M. Waltl: "Improved Sampling Algorithms for Monte Carlo Device Simulation"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 53 - 54. BibTeX |
| 59. | S. Naz, A. Shah, S. Ahmed, G. Patrick, M. Waltl: "Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata"; Poster: IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual); 2021-05-24 - 2021-05-28; in "Proceedings of the IEEE European Test Symposium (ETS)", (2021), doi:10.1109/ETS50041.2021.9465459. BibTeX |
| 58. | T. Grasser, B. O´Sullivan, B. Kaczer, J. Franco, B. Stampfer, M. Waltl: "CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States"; Talk: IEEE International Reliability Physics Symposium (IRPS), virtual; 2021-03-21 - 2021-03-24; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7, 1 - 6 doi:10.1109/IRPS46558.2021.9405184. BibTeX |
| 57. | M. Waltl: "Spectroscopy of Single Defects in Semiconductor Transistors"; Talk: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual; (invited) 2020-11-05 - 2020-11-06; in "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020), . BibTeX |
| 56. | K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl: "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871. BibTeX |
| 55. | A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX |
| 54. | D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser: "Machine Learning Prediction of Formation Energies in a-SiO2"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX |
| 53. | Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser: "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX |
| 52. | T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "The Impact of the Graphene Work Function on the Stability of Flexible GFETs"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX |
| 51. | Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX |
| 50. | T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX |
| 49. | T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl: "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX |
| 48. | A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu: "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX |
| 47. | J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl: "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX |
| 46. | M. Waltl: "Defect Spectroscopy in SiC Devices"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; (invited) 2020-04-28 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 9 doi:10.1109/IRPS45951.2020.9129539. BibTeX |
| 45. | M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993630. BibTeX |
| 44. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX |
| 43. | A. Shah, M. Waltl: "Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits"; Talk: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 2019-11-27 - 2019-11-29; in "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), 197 - 200 doi:10.1109/ICECS46596.2019.8964962. BibTeX |
| 42. | J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier: "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4 doi:10.1109/IIRW47491.2019.8989910. BibTeX |
| 41. | B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904. BibTeX |
| 40. | D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser: "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX |
| 39. | M. Waltl: "Characterization and Modeling of Single Charge Trapping in MOS Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; (invited) 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 9 doi:10.1109/IIRW47491.2019.8989880. BibTeX |
| 38. | Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser: "Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio"; Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 2018-06-24 - 2018-06-27; in "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0, doi:10.1109/DRC.2018.8442242. BibTeX |
| 37. | T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX |
| 36. | Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser: "Reliability of next-generation field-effect transistors with transition metal dichalcogenides"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX |
| 35. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX |
| 34. | Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser: "Encapsulated MoS2 FETs with Improved Performance and Reliability"; Talk: GRAPCHINA, Nanjing, China; 2017-09-24 - 2017-09-26; in "Proceedings of the GRAPCHINA 2017", (2017), 1 page(s) . BibTeX |
| 33. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
| 32. | B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX |
| 31. | T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer: "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX |
| 30. | A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX |
| 29. | Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser: "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338. BibTeX |
| 28. | G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX |
| 27. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX |
| 26. | Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser: "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs"; Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX |
| 25. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser: "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs"; Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209. BibTeX |
| 24. | Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser: "Temperature-dependent Hysteresis in Black Phosphorus FETs"; Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), . BibTeX |
| 23. | T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer: "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX |
| 22. | Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser: "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators"; Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543. BibTeX |
| 21. | M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser: "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX |
| 20. | T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer: "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538 doi:10.1109/IEDM.2015.7409739. BibTeX |
| 19. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651. BibTeX |
| 18. | Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741. BibTeX |
| 17. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser: "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279. BibTeX |
| 16. | B. Ullmann, M. Waltl, T. Grasser: "Characterization of the Permanent Component of MOSFET Degradation Mechanisms"; Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 2015-06-25 - 2015-06-26; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37. BibTeX |
| 15. | T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer: "On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX |
| 14. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834. BibTeX |
| 13. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors"; Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) . BibTeX |
| 12. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778. BibTeX |
| 11. | T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX |
| 10. | W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser: "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567. BibTeX |
| 9. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös: "Evidence for Defect Pairs in SiON pMOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 228 - 263. BibTeX |
| 8. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer: "A unified perspective of RTN and BTI"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7. BibTeX |
| 7. | M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser: "A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5. BibTeX |
| 6. | T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer: "Characterization and Modeling of Charge Trapping: From Single Defects to Devices"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620. BibTeX |
| 5. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer: "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637. BibTeX |
| 4. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer: "Recent Advances in Understanding Oxide Traps in pMOS Transistors"; Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96. BibTeX |
| 3. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser: "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 2. | T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer: "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 1. | M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser: "Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79. BibTeX |
| 3. | Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser: "Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs"; Talk: Graphne 2022, Aachen, Germany; 2022-07-05 - 2022-07-08; . BibTeX |
| 2. | Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX |
| 1. | Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser: "Reliability Perspective of 2D Electronics"; Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX |
| 1. | M. Waltl: "Experimental Characterization of Bias Temperature Instabilities in Modern Transistor Technologies"; Reviewer: T. Grasser, D. Schmitt-Landsiedel; Institut für Mikroelektronik, 2016, oral examination: 2016-09-09 doi:10.34726/hss.2016.38201. BibTeX |
| 5. | M. Kratzmann: "Entwicklung eines rauscharmen CV Messmoduls für die Defektspektroskopie von MOS Transistoren"; Supervisor: T. Grasser, M. Waltl; E360, 2021, final examination: 2021-11-18. BibTeX |
| 4. | C. Schleich: "Charakterisierung und Modellierung von SiC Transistoren"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019, final examination: 2019-01-25. BibTeX |
| 3. | P. Fleischanderl: "Charakterisierung von Hot Carrier Degradation in Siliziumtransistoren"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2018, final examination: 2018-11-26. BibTeX |
| 2. | M. Huymajer: "Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2016, final examination: 2016-06-16. BibTeX |
| 1. | M. Waltl: "Change Point Detection in Time Dependent Defect Spectroscopy Data"; Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2011, final examination: 2011-11-25. BibTeX |