Publications Robert Wittmann
18 records
| 1. | R. Wittmann, S. Selberherr: "A Study of Ion Implantation into Crystalline Germanium"; Solid-State Electronics, 51, (2007), 982 - 988 doi:10.1016/j.sse.2007.03.019. BibTeX |
| 2. | R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr: "A Study of Boron Implantation into High Ge Content SiGe Alloys"; in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 667 - 676 doi:10.1149/1.2355862. BibTeX |
| 1. | R. Wittmann, A. Hössinger, S. Selberherr: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; in "SiGe: Materials, Processing, and Devices", issued by The Electrochemical Society; ECS Transactions, 2004, ISBN: 1-56677-420-9, 181 - 192. BibTeX |
| 10. | R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr: "A Study of Boron Implantation into High Ge Content SiGe Alloys"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 9. | R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr: "Monte Carlo Simulation of Boron Implantation into (100) Germanium"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 381 - 384 doi:10.1109/SISPAD.2006.282914. BibTeX |
| 8. | R. Wittmann, H. Puchner, H. Ceric, S. Selberherr: "Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44. BibTeX |
| 7. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET"; Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2005-10-17 - 2005-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1, 99 - 102. BibTeX |
| 6. | R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 191 - 194 doi:10.1109/SISPAD.2005.201505. BibTeX |
| 5. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32. BibTeX |
| 4. | R. Wittmann, A. Hössinger, S. Selberherr: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 2004-10-03 - 2004-10-08; in "206th ECS Meeting", (2004), ISBN: 1-56677-420-9, 181 - 192. BibTeX |
| 3. | R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 169 - 172 doi:10.1007/978-3-7091-0624-2_40. BibTeX |
| 2. | R. Wittmann, A. Hössinger, S. Selberherr: "Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 35 - 40. BibTeX |
| 1. | R. Wittmann, A. Hössinger, S. Selberherr: "Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 159 - 163. BibTeX |
| 1. | R. Wittmann: "Miniaturization Problems in CMOS Technology: Investigation of Doping Profiles and Reliability"; Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2007, oral examination: 2007-02-27 doi:10.34726/hss.2007.7645. BibTeX |
| 1. | R. Wittmann: "A Web-Based Training Environment for CORBA-Based Database Applications"; Supervisor: J. Falb; Institut für Computertechnik, 2002, . BibTeX |
| 3. | R. Entner, R. Heinzl, Ch. Hollauer, A. Sheikholeslami, R. Wittmann, S. Selberherr: "VISTA Status Report June 2005"; (2005), 29 page(s) . BibTeX |
| 2. | H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr: "VISTA Status Report June 2004"; (2004), 28 page(s) . BibTeX |
| 1. | Ch. Hollauer, A. Sheikholeslami, V. Palankovski, S. Wagner, R. Wittmann, S. Selberherr: "VISTA Status Report June 2003"; (2003), 36 page(s) . BibTeX |