Michael Waltl is a senior scientist and is the director of the device characterization laboratory at the Institute for Microelectronics. He obtained the BSc degree in electrical engineering, the degree of Diplomingenieur in microelectronics, and the doctoral degree in technical sciences (summa cum laude) from TU Wien in 2009, 2011, and 2016, respectively. His scientific focus is on reliability issues in semiconductor devices and circuits, where he is investigating bias temperature instabilities in silicon devices, devices employing wideband-gap materials, and transistors built on novel 2D materials. Dr. Waltl currently leads the Christian Doppler Laboratory for Single-Defect Spectroscopy and several FFG projects. Furthermore, Dr. Waltl heads several research projects with international industrial partners imec, ams AG, Lam Research, and more. In 2018 Dr. Waltl was a visiting researcher at imec, Belgium, Europe, and at Stanford University, CA, USA. His research group at the Institute for Microelectronics counts more than 10 scientists (PhDs and PostDocs). He is also the recipient of a best paper award at IRPS 2014, a best poster award at the ICPTDC 2019, and co-recipient of the best student paper awards at the IIRW 2019, IEDM 2019, and DRC 2020. Dr. Waltl serves in the management committee of the IIRW, is a member of the technical program committee of the ESREF and ESSDERC/ESSCIRC conferences, and is a reviewer of numerous renowned Journals including IEEE TED, Microelectronics Reliability, Journal of Applied Physics, and many more.