Michael Waltl was born in Oberndorf near Salzburg, Austria. He received the BSc degree in electrical engineering, the degree of Diplomingenieur in microelectronics, and the doctoral degree in technical sciences from TU Wien in 2009, 2011, and 2016, respectively. His scientific focus is on experimental characterization and modeling of reliability issues prevalent in semiconductor devices and devices with more exotic 2D materials. In this field, he primarily studies bias temperature instabilities in modern transistors. He also leads the device characterization laboratory at the institute, where he is in charge of developing electrical measurement methods.