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    Publications Viktor Sverdlov

    509 records


    Books and Editorships

    11. V. Sverdlov, N. Jutong:
    "Editorial for the Special Issue on Magnetic and Spin Devices";
    Micromachines, 13, (2022), 493-1 - 493-3 doi:10.3390/mi13040493. BibTeX
    10. F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet:
    "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
    Universidad de Granada, Granada, Spain, (2018), ISBN: 978-1-5386-4810-0, 154 page(s) . BibTeX
    9. F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet:
    "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
    IEEE Xplore, in "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS", (2018), ISBN: 978-1-5386-4811-7, 1 - 2. BibTeX
    8. V. Sverdlov, S. Selberherr:
    "Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
    Solid-State Electronics, Elsevier, (2017), ISSN: 0038-1101, 206 page(s) . BibTeX
    7. V. Sverdlov, S. Selberherr:
    "Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016";
    Solid-State Electronics, 128, (2017), 1 - 2 doi:10.1016/j.sse.2016.10.015. BibTeX
    6. B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick:
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4, 88 page(s) . BibTeX
    5. V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr:
    "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
    IEEE, (2016), ISBN: 978-1-4673-8608-1, 272 page(s) . BibTeX
    4. V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr:
    "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
    Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-29-8, 166 page(s) . BibTeX
    3. V. Sverdlov, S. Selberherr, F. Gamiz, S. Cristoloveanu:
    "Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)";
    IEEE Xplore, in "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-1-4673-8609-8, 1 doi:10.1109/ULIS.2016.7440034. BibTeX
    2. V. Sverdlov, B. Jonker, K. Ishibashi, S.M. Goodnick, S. Selberherr:
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, (2014), ISBN: 978-3-901578-28-1, 84 page(s) . BibTeX
    1. V. Sverdlov:
    "Strain-Induced Effects in Advanced MOSFETs";
    S. Selberherr (ed); Springer-Verlag, Wien - New York, (2011), ISBN: 978-3-7091-0381-4, 252 page(s) doi:10.1007/978-3-7091-0382-1. BibTeX

    Publications in Scientific Journals

    80. M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Interface Effects in Ultra-Scaled MRAM Cells";
    Solid-State Electronics, 194, (2022), 108373-1 - 108373-4 doi:10.1016/j.sse.2022.108373. BibTeX
    79. J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
    "Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
    Proceedings of SPIE, 12157, (invited) (2022), 1215708-1 - 1215708-14 doi:10.1117/12.2624595. BibTeX
    78. J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement learning to reduce failures in SOT-MRAM switching";
    Microelectronics Reliability, 135, (invited) (2022), 1 - 5 doi:10.1016/j.microrel.2022.114570. BibTeX
    77. T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach";
    Solid-State Electronics, 193, (invited) (2022), 108269-1 - 108269-7 doi:10.1016/j.sse.2022.108269. BibTeX
    76. N. Jorstad, S. Fiorentini, W.J. Loch, W. Goes, S. Selberherr, V. Sverdlov:
    "Finite Element Modeling of Spin-Orbit Torques";
    Solid-State Electronics, 194, (2022), 108323-1 - 108323-4 doi:10.1016/j.sse.2022.108323. BibTeX
    75. W.J. Loch, S. Fiorentini, N. Jorstad, W. Goes, S. Selberherr, V. Sverdlov:
    "Double Reference Layer STT-MRAM Structures with Improved Performance";
    Solid-State Electronics, 194, (2022), 108335-1 - 108335-4 doi:10.1016/j.sse.2022.108335. BibTeX
    74. S. Selberherr, V. Sverdlov:
    "About electron transport and spin control in semiconductor devices";
    Solid-State Electronics, 197, (invited) (2022), doi:10.1016/j.sse.2022.108443. BibTeX
    73. V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina:
    "Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase";
    Solid-State Electronics, 193, (invited) (2022), 108266-1 - 108266-8 doi:10.1016/j.sse.2022.108266. BibTeX
    72. J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
    "Emerging CMOS Compatible Magnetic Memories and Logic";
    IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX
    71. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
    Microelectronics Reliability, 126, (2021), 114231-1 - 114231-5 doi:10.1016/j.microrel.2021.114231. BibTeX
    70. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
    Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX
    69. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
    Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX
    68. R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
    "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
    IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX
    67. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
    Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX
    66. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
    Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX
    65. V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr:
    "Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T′ Phase";
    Solid-State Electronics, 184, (invited) (2021), 108081-1 - 108081-9 doi:10.1016/j.sse.2021.108081. BibTeX
    64. S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
    Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX
    63. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
    IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX
    62. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
    Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX
    61. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
    Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX
    60. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon";
    Semiconductors (Physics of Semiconductor Devices), 54, (invited) (2020), 1713 - 1715 doi:10.1134/S1063782620120386. BibTeX
    59. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T´ Phase";
    IEEE Transactions on Electron Devices, 67, (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921. BibTeX
    58. J. Ghosh, D. Osintsev, V. Sverdlov:
    "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
    Journal of Computational Electronics, 18, (2019), 28 - 36 doi:10.1007/s10825-018-1274-x. BibTeX
    57. R. Orio, S. Selberherr, V. Sverdlov:
    "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
    Proceedings of SPIE, 11090, (invited) (2019), 110903F-1 - 110903F-6 doi:10.1117/12.2529119. BibTeX
    56. V. Sverdlov, A. Makarov, S. Selberherr:
    "Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM";
    Solid-State Electronics, 155, (2019), 49 - 56 doi:10.1016/j.sse.2019.03.010. BibTeX
    55. V. Sverdlov, S. Selberherr:
    "Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts";
    Solid-State Electronics, 159, (2019), 43 - 50 doi:10.1016/j.sse.2019.03.053. BibTeX
    54. V. Sverdlov, A. Makarov, S. Selberherr:
    "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field";
    Journal on Systemics, Cybernetics and Informatics, 16, (invited) (2018), 55 - 59. BibTeX
    53. V. Sverdlov, S. Selberherr:
    "Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing";
    Facta universitatis - series: Electronics and Energetics, 31, (invited) (2018), 529 - 545 doi:10.2298/FUEE1804529S. BibTeX
    52. V. Sverdlov, S. Selberherr:
    "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor";
    Proceedings of SPIE, 10732, (invited) (2018), 1073235-1 - 1073235-8 doi:10.1117/12.2319271. BibTeX
    51. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spintronics as a Non-Volatile Complement to Modern Microelectronics";
    Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47, (invited) (2017), 195 - 210. BibTeX
    50. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
    Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34. BibTeX
    49. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "CMOS-Compatible Spintronic Devices: A Review";
    Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006. BibTeX
    48. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
    Proceedings of SPIE, 9931, (invited) (2016), 99312M-1 - 99312M-12 doi:10.1117/12.2236151. BibTeX
    47. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
    Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072. BibTeX
    46. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
    Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007. BibTeX
    45. V. Sverdlov, S. Selberherr:
    "Silicon Spintronics: Progress and Challenges";
    Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002. BibTeX
    44. T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
    "Modelling of Multipurpose Spintronic Devices";
    International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215. BibTeX
    43. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
    Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023. BibTeX
    42. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
    Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056. BibTeX
    41. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection in a Semiconductor Through a Space-Charge Layer";
    Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035. BibTeX
    40. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
    Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89. BibTeX
    39. A. Makarov, V. Sverdlov, S. Selberherr:
    "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
    International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141. BibTeX
    38. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
    Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29. BibTeX
    37. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Bias-Field-Free Spin Transfer Oscillator";
    Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936. BibTeX
    36. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
    Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y. BibTeX
    35. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
    Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017. BibTeX
    34. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
    IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683. BibTeX
    33. A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Proceedings of SPIE, 8813, (invited) (2013), 88132Q-1 - 88132Q-9 doi:10.1117/12.2025568. BibTeX
    32. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
    Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055. BibTeX
    31. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
    Sains Malaysiana, 42, (2013), 205 - 211. BibTeX
    30. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
    "Multiple Purpose Spin Transfer Torque Operated Devices";
    Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W. BibTeX
    29. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
    Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030. BibTeX
    28. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
    IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565. BibTeX
    27. A. Makarov, V. Sverdlov, S. Selberherr:
    "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
    Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020. BibTeX
    26. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
    Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015. BibTeX
    25. F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
    "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
    Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX
    24. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
    "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
    Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022. BibTeX
    23. O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
    IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211. BibTeX
    22. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
    Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376. BibTeX
    21. A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
    Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503. BibTeX
    20. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
    Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010. BibTeX
    19. A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
    Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8. BibTeX
    18. T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr:
    "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting";
    Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008. BibTeX
    17. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Modeling of Modern MOSFETs with Strain";
    Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1. BibTeX
    16. V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
    Journal Integrated Circuits and Systems, 4, (2009), 55 - 60 doi:10.29292/jics.v4i2.298. BibTeX
    15. S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
    "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
    Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX
    14. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
    "Charging and Discharging of Oxide Defects in Reliability Issues";
    IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX
    13. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
    "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
    Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX
    12. V. Sverdlov, H. Kosina, S. Selberherr:
    "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
    Proceedings of SPIE, 7025, (2008), 70251I-1 - 70251I-8 doi:10.1117/12.802503. BibTeX
    11. V. Sverdlov, H. Kosina, S. Selberherr:
    "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
    Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7. BibTeX
    10. V. Sverdlov, S. Selberherr:
    "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
    Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054. BibTeX
    9. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Current Transport Models for Nanoscale Semiconductor Devices";
    Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001. BibTeX
    8. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain";
    IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340 doi:10.1109/TNANO.2007.894835. BibTeX
    7. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations";
    Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022. BibTeX
    6. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
    "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
    IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX
    5. Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev:
    "A Numerical Study of Transport and Shot Noise in 2D Hopping";
    Journal of Physics: Condensed Matter, 18, (2006), 1999 - 2012. BibTeX
    4. Y. Kinkhabwala, V. Sverdlov, K. Likharev:
    "A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport";
    Journal of Physics: Condensed Matter, 18, (2006), 2013 - 2027. BibTeX
    3. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
    "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
    Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6. BibTeX
    2. V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling Current Transport in Ultra-Scaled Field-Effect Transistors";
    Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009. BibTeX
    1. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
    "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
    Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013. BibTeX

    Contributions to Books

    55. A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov:
    "First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations";
    in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560183. BibTeX
    54. T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in MRAM at Writing: A Finite Element Approach";
    in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560669. BibTeX
    53. V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
    "Conductance due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
    in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560173. BibTeX
    52. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
    in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365497. BibTeX
    51. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov:
    "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
    in "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", issued by The Electrochemical Society; J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed); ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164 doi:10.1149/09705.0159ecst. BibTeX
    50. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
    in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365283. BibTeX
    49. V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
    "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k·p Study";
    in "Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); IEEE, 2020, ISBN: 978-83-63578-17-6, 168 - 171 doi:10.23919/MIXDES49814.2020.9155676. BibTeX
    48. V. Sverdlov, A.-M. El-Sayed, S. Selberherr, H. Kosina:
    "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel";
    in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365289. BibTeX
    47. V. Sverdlov, S. Selberherr:
    "A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 11958, I. Lirkov, S. Margenov (ed); Springer International Publishing, 2020, ISBN: 978-3-030-41031-5, 446 - 453 doi:10.1007/978-3-030-41032-2_51. BibTeX
    46. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
    in "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", J. Lacord, M. Bawedin (ed); IEEE, 2019, ISBN: 978-1-7281-1658-7, 1 - 4 doi:10.1109/EUROSOI-ULIS45800.2019.9041920. BibTeX
    45. J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
    "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
    in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE, 2018, ISBN: 978-1-5386-4812-4, 205 - 208 doi:10.1109/ULIS.2018.8354770. BibTeX
    44. A. Makarov, V. Sverdlov, S. Selberherr:
    "Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells";
    in "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", issued by The Electrochemical Society; J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed); ECS Transactions, 2018, ISBN: 978-1-62332-488-9, 213 - 218 doi:10.1149/08508.0213ecst. BibTeX
    43. V. Sverdlov, A. Makarov, S. Selberherr:
    "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM";
    in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE, 2018, ISBN: 978-1-5386-4812-4, 161 - 164 doi:10.1109/ULIS.2018.8354759. BibTeX
    42. V. Sverdlov, S. Selberherr:
    "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions";
    in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE, 2018, ISBN: 978-1-5386-4812-4, 33 - 36 doi:10.1109/ULIS.2018.8354727. BibTeX
    41. E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome:
    "Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices";
    in "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", 27, E. Gutierrez-Dominguez (ed); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, 17 - 185 doi:10.1049/PBCS027E_ch2. BibTeX
    40. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Electron Momentum and Spin Relaxation in Silicon Films";
    in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 695 - 700 doi:10.1007/978-3-319-23413-7_96. BibTeX
    39. V. Sverdlov, D. Osintsev, S. Selberherr:
    "Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
    in "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, (invited) 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531-003. BibTeX
    38. V. Sverdlov, S. Selberherr:
    "Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
    in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (ed); IEEE, 2016, ISBN: 978-1-4673-8608-1, 202 - 205 doi:10.1109/ULIS.2016.7440088. BibTeX
    37. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "A Universal Nonvolatile Processing Environment";
    in "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6. BibTeX
    36. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
    in "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", issued by The Electrochemical Society; Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); ECS Transactions, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst. BibTeX
    35. J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
    "Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31. BibTeX
    34. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing";
    in "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", issued by CRC Press; T. Brozek (ed); CRC Press, 2015, ISBN: 978-1-4822-1490-1, 221 - 259 doi:10.1201/b17597. BibTeX
    33. A. Makarov, V. Sverdlov, S. Selberherr:
    "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
    in "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., (invited) 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001. BibTeX
    32. V. Sverdlov, S. Selberherr:
    "Spin-Based CMOS-Compatible Devices";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer International Publishing, (invited) 2015, ISBN: 978-3-319-26519-3, 42 - 49 doi:10.1007/978-3-319-26520-9_4. BibTeX
    31. V. Sverdlov, S. Selberherr:
    "Spin-Based Silicon and CMOS-Compatible Devices";
    in "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", issued by The Electrochemical Society; Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); ECS Transactions, (invited) 2015, ISBN: 978-1-62332-238-0, 223 - 231 doi:10.1149/06605.0223ecst. BibTeX
    30. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Buffered Magnetic Logic Gate Grid";
    in "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5, Vol. 66, No. 4", issued by The Electrochemical Society; F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); ECS Transactions, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst. BibTeX
    29. J. Ghosh, V. Sverdlov, S. Selberherr:
    "Spin Diffusion and the Role of Screening Effects in Semiconductors";
    in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865825. BibTeX
    28. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
    in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 58 - 61. BibTeX
    27. A. Makarov, V. Sverdlov, S. Selberherr:
    "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
    in "Future Information Engineering", G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451. BibTeX
    26. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
    "Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
    in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824. BibTeX
    25. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
    in "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7. BibTeX
    24. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
    "Modeling Silicon Spintronics";
    in "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198. BibTeX
    23. V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
    "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
    in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33. BibTeX
    22. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
    in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862. BibTeX
    21. A. Makarov, V. Sverdlov, S. Selberherr:
    "Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory";
    in "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2013, ISBN: 978-1118-44216-6, 93 - 101 doi:10.1002/9781118678107.ch6. BibTeX
    20. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
    in "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", issued by The Electrochemical Society; Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed); ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208 doi:10.1149/05305.0203ecst. BibTeX
    19. A. Makarov, V. Sverdlov, S. Selberherr:
    "MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations";
    in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242842. BibTeX
    18. A. Makarov, V. Sverdlov, S. Selberherr:
    "New Trends in Microelectronics: Towards an Ultimate Memory Concept";
    in "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4 doi:10.1109/ICCDCS.2012.6188899. BibTeX
    17. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
    in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242850. BibTeX
    16. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72. BibTeX
    15. A. Makarov, V. Sverdlov, S. Selberherr:
    "Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
    in "Numerical Methods and Applications, Lecture Notes in Computer Science", 6046, I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer Berlin Heidelberg, 2011, ISBN: 978-3-642-18465-9, 87 - 94 doi:10.1007/978-3-642-18466-6_9. BibTeX
    14. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
    "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
    in "Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol.35, No.5", issued by The Electrochemical Society; Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (ed); ECS Transactions, 2011, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806. BibTeX
    13. T. Windbacher, V. Sverdlov, S. Selberherr:
    "Classical Device Modeling";
    in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer New York, (invited) 2011, ISBN: 978-1-4419-8839-3, 1 - 96 doi:10.1007/978-1-4419-8840-9_1. BibTeX
    12. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
    in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2010, ISBN: 978-0-470-55137-0, 281 - 291 doi:10.1002/9780470649343.ch24. BibTeX
    11. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
    "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 5910, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-12534-8, 443 - 450 doi:10.1007/978-3-642-12535-5_52. BibTeX
    10. T. Windbacher, V. Sverdlov, S. Selberherr:
    "Biotin-Streptavidin Sensitive BioFETs and Their Properties";
    in "Biomedical Engineering Systems and Technologies, Communications in Computer and Information Scienc", 52, A. Fred, J. Filipe, H. Gamboa (ed); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-11720-6, 85 - 95 doi:10.1007/978-3-642-11721-3_6. BibTeX
    9. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2008, ISBN: 978-80-86407-12-8, 157 - 164 doi:10.1007/978-3-540-78827-0_16. BibTeX
    8. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
    "Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
    in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425. BibTeX
    7. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
    in "Nanoscaled Semiconductor-on-Insulator Structures and Devices", S. Hall, A. Nazarov, V. Lysenko (ed); Springer Netherlands, 2007, ISBN: 978-1-4020-6378-7, 357 - 362 doi:10.1007/978-1-4020-6380-0_23. BibTeX
    6. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2007, ISBN: 978-3-540-78825-6, 157 - 164 doi:10.1007/978-3-540-78827-0_16. BibTeX
    5. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations";
    in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1389 - 1390 doi:10.1063/1.2730422. BibTeX
    4. V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
    "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
    in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, 594 - 601 doi:10.1007/11666806_68. BibTeX
    3. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
    in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 45 - 54 doi:10.1149/1.2355793. BibTeX
    2. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling of Advanced Semiconductor Devices";
    in "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", issued by The Electrochemical Society; J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (ed); ECS Transactions, (invited) 2006, ISBN: 1-56677-512-4, 207 - 216 doi:10.1149/1.2813493. BibTeX
    1. V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr:
    "Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays";
    in "Unsolved Problems of Noise and Fluctuations", issued by New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, 177 - 182. BibTeX

    Talks and Poster Presentations (with Proceedings-Entry)

    344. S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr:
    "Design Analysis of Ultra-Scaled MRAM Cells";
    Talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; (invited) 2022-10-25 - 2022-10-28; in "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0, . BibTeX
    343. V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
    "Modeling Advanced Spintronic Based Magnetoresistive Memory";
    Talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; (invited) 2022-09-27 - 2022-09-29; in "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022), . BibTeX
    342. S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Spin Torques in ULTRA-Scaled MRAM Devices";
    Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 - 2022-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 348 - 351. BibTeX
    341. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX
    340. T. Hadámek, W. Goes, S. Selberherr, V. Sverdlov:
    "Modeling Thermal Effects in STT-MRAM";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX
    339. S. Selberherr, V. Sverdlov:
    "About Electron Transport and Spin Control in Semiconductor Devices";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; (invited) 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 1 - 4. BibTeX
    338. V. Sverdlov:
    "Modeling Ultra-Scaled Magnetoresistive Memory Cells";
    3rd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 2022-07-18 in "3rd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX
    337. V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina, S. Selberherr:
    "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T";
    Talk: International Conference on Physics and its Application, San Francisco, USA; (invited) 2022-07-18 - 2022-07-21; in "International Conference on Physics and its Application 2022", (2022), 36 - 37. BibTeX
    336. S. Fiorentini, J. Ender, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach";
    Talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 2022-07-12 - 2022-07-15; in "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", (2022), 20, 4, 40 - 44. BibTeX
    335. Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser:
    "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators";
    Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX
    334. V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr:
    "Modeling Approach to Ultra-Scaled MRAM Cells";
    Talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; (invited) 2022-06-23 - 2022-06-25; in "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), 7 - 8. BibTeX
    333. T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov:
    "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach";
    Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX
    332. N. Jørstad, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Modeling Interfacial and Bulk Spin-Orbit torques";
    Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX
    331. W.J. Loch, S. Selberherr, V. Sverdlov:
    "Simulation of Novel MRAM Devices with Enhanced Performance";
    Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX
    330. R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov:
    "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy";
    Talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 - 2022-06-06; in "2022 IEEE Latin American Electron Devices Conference (LAEDC)", (2022), ISBN: 978-1-6654-9768-8, 1 - 4 doi:10.1109/LAEDC54796.2022.9908222. BibTeX
    329. V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
    "Emerging Devices for Digital Spintronics";
    2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; (invited) 2022-05-25 - 2022-05-26; in "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), 32 - 33. BibTeX
    328. M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin Transfer Torques in Ultra-Scaled MRAM Cells";
    Talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 - 2022-05-27; in "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5, 129 - 132. BibTeX
    327. V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr:
    "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches";
    2 nd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 2022-03-14 - 2022-03-15; in "2nd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX
    326. N. Jørstad, S. Fiorentini, W. Goes, V. Sverdlov:
    "Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM";
    Talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17 in "Proceedings of the 14th International MOS-AK Workshop", (2021), 1. BibTeX
    325. S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Design Support for Ultra-Scaled MRAM Cells";
    Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 - 2021-12-15; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 page(s) . BibTeX
    324. A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr, V. Sverdlov:
    "Ab-initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons";
    Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 79 - 80. BibTeX
    323. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices";
    Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 12 - 13. BibTeX
    322. J. Ender, R. Orio, V. Sverdlov:
    "Enhancing SOT-MRAM Switching Using Machine Learning";
    Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2021-10-14 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), 1. BibTeX
    321. J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
    "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches";
    Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2021-10-04 - 2021-10-08; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8, . BibTeX
    320. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov:
    "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
    Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 - 2021-10-07; in "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714, 1 - 4 doi:10.1016/j.microrel.2021.114231. BibTeX
    319. M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Finite Element Method Approach to MRAM Modeling";
    Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 - 2021-10-01; in "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1, 70 - 73 doi:10.23919/MIPRO52101.2021.9597194. BibTeX
    318. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 150 - 154 doi:10.1109/SISPAD54002.2021.9592561. BibTeX
    317. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 155 - 158 doi:10.1109/SISPAD54002.2021.9592559. BibTeX
    316. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching";
    Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 - 2021-10-15; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6, doi:10.1109/IPFA53173.2021.9617362. BibTeX
    315. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States";
    Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-17; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021), . BibTeX
    314. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration";
    Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 - 2021-09-10; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021), . BibTeX
    313. A.-M. El-Sayed, H. Seiler, H. Kosina, V. Sverdlov:
    "First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons";
    Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 113 - 114. BibTeX
    312. T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in MRAM at Writing: A Finite Element Approach";
    Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134. BibTeX
    311. V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
    "Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 52 - 53. BibTeX
    310. J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
    "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
    Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2021-08-01 - 2021-08-05; in "Proceedings of SPIE Spintronics", (2021), 11805-53. BibTeX
    309. T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov:
    "Heating Asymmetry in Magnetoresistive Random Access Memories";
    Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 2021-07-18 - 2021-07-21; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), ISBN: 978-1-950492-55-8, 63 - 66. BibTeX
    308. J. Ender, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); (invited) 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 45 - 46. BibTeX
    307. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 51 - 52. BibTeX
    306. T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov:
    "Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 49 - 50. BibTeX
    305. H. Kosina, H. Seiler, V. Sverdlov:
    "Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 2 - 3. BibTeX
    304. V. Sverdlov:
    "Modeling Spin Transfer Torque Magnetoresistive Memory";
    Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2020-10-20 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1. BibTeX
    303. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon";
    Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 2020-09-28 - 2020-10-02; in "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6, 200 - 201. BibTeX
    302. J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662. BibTeX
    301. S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657. BibTeX
    300. H. Kosina, H. Seiler, V. Sverdlov:
    "Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 185 - 188 doi:10.23919/SISPAD49475.2020.9241650. BibTeX
    299. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov:
    "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents";
    Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 - 2020-09-16; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4, 58 - 61. BibTeX
    298. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
    Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124. BibTeX
    297. V. Sverdlov, H. Kosina:
    "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 68 - 69. BibTeX
    296. S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
    "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
    Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2020-08-24 - 2020-08-28; in "Proceedings of SPIE Spintronics", (2020), 11470-44. BibTeX
    295. V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
    "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study";
    Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 2020-06-25 - 2020-06-27; in "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), 58. BibTeX
    294. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
    Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/1389, doi:10.1149/MA2020-01241389mtgabs. BibTeX
    293. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
    Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-03-31 - 2020-04-02; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113. BibTeX
    292. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current";
    Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 2020-03-16 - 2020-03-18; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 341 - 344 doi:10.1109/EDTM47692.2020.9117985. BibTeX
    291. V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr:
    "Emerging CMOS Compatible Magnetic Memories and Logic";
    Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 2020-02-25 - 2020-02-28; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9073332. BibTeX
    290. V. Sverdlov, S. Selberherr:
    "Spintronic Memories";
    Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China; (invited) 2019-12-16 - 2019-12-19; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), 19 - 21. BibTeX
    289. R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques";
    Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 page(s) . BibTeX
    288. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Switching in Perpendicular STT-MRAM";
    Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 107 - 108. BibTeX
    287. R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov:
    "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 54 - 55. BibTeX
    286. V. Sverdlov, S. Selberherr:
    "CMOS Technology Compatible Magnetic Memories";
    Talk: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China; (invited) 2019-10-09 - 2019-10-10; in "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019), ISBN: 978-1-7281-2062-1, doi:10.1109/ISNE.2019.8896421. BibTeX
    285. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM";
    Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558, 146 - 149 doi:10.1109/ESSDERC.2019.8901780. BibTeX
    284. S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
    "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 57 - 60 doi:10.1109/SISPAD.2019.8870359. BibTeX
    283. V. Sverdlov:
    "Spin-based Electronics: Recent Developments and Trends";
    Talk: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia; (invited) 2019-08-26 - 2019-08-29; in "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), 7. BibTeX
    282. R. Orio, S. Selberherr, V. Sverdlov:
    "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
    Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2019-08-11 - 2019-08-15; in "Proceedings of SPIE Spintronics", (2019), 11090-123. BibTeX
    281. V. Sverdlov, S. Selberherr:
    "Shot Noise in Magnetic Tunnel Junctions";
    Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 2019-07-06 - 2019-07-09; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), ISBN: 978-1-950492-09-1, 19 - 22. BibTeX
    280. V. Sverdlov, S. Selberherr:
    "Spin-Based CMOS-Compatible Memories";
    International Nanoelectronics Conference (INEC), Kuching, Malaysia; (invited) 2019-07-03 - 2019-07-05; in "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019), ISSN: 2159-3531, doi:10.1109/INEC.2019.8853848. BibTeX
    279. V. Sverdlov, S. Selberherr:
    "A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions";
    Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2019-06-10 - 2019-06-14; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 96. BibTeX
    278. R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov:
    "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 69 - 71. BibTeX
    277. V. Sverdlov, S. Selberherr:
    "Hopping in a Multiple Ferromagnetic Terminal Configuration";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 75 - 77. BibTeX
    276. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM";
    Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 - 2019-05-22; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34. BibTeX
    275. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
    Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 - 2019-04-03; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153. BibTeX
    274. V. Sverdlov, S. Selberherr:
    "Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells";
    Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 2019-03-13 - 2019-03-15; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 151 - 153 doi:10.1109/EDTM.2019.8731330. BibTeX
    273. V. Sverdlov, A. Makarov, S. Selberherr:
    "Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching";
    Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2018-11-25 - 2018-11-30; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 124 - 125. BibTeX
    272. V. Sverdlov, S. Selberherr:
    "Shot Noise Enhancement at Spin-dependent Hopping";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2018-11-25 - 2018-11-30; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 6 - 7. BibTeX
    271. V. Sverdlov, S. Selberherr:
    "A Single-Spin Switch";
    Talk: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan; (invited) 2018-11-13 - 2018-11-15; in "Conference Abstract Book", (2018), . BibTeX
    270. V. Sverdlov, A. Makarov, S. Selberherr:
    "Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM";
    Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 2018-11-08 - 2018-11-09; in "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), 32. BibTeX
    269. V. Sverdlov, S. Selberherr:
    "Actual Problems in the Field of Spintronics";
    Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 2018-10-08 - 2018-10-10; in "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), 40. BibTeX
    268. V. Sverdlov, S. Selberherr:
    "Electron Spin for Modern and Future Microelectronics";
    Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2018-10-01 - 2018-10-05; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), ISBN: 978-5-317-05917-0, 7. BibTeX
    267. A. Makarov, V. Sverdlov, S. Selberherr:
    "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 186 - 189 doi:10.1109/SISPAD.2018.8551716. BibTeX
    266. V. Sverdlov, S. Selberherr:
    "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor";
    Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2018-08-19 - 2018-08-23; in "Proceedings of SPIE Spintronics", (2018), 10732-112. BibTeX
    265. V. Sverdlov, A. Makarov, S. Selberherr:
    "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field";
    Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2018-07-08 - 2018-07-11; in "Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), ISBN: 978-1-941763-81-0, 30 - 32. BibTeX
    264. A. Makarov, V. Sverdlov, S. Selberherr:
    "Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 - 2018-06-16; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 51. BibTeX
    263. V. Sverdlov, S. Selberherr:
    "Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 - 2018-06-16; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 49. BibTeX
    262. A. Makarov, V. Sverdlov, S. Selberherr:
    "Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells";
    Talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 2018-05-13 - 2018-05-17; in "Proceedings of the 233rd ECS Meeting (ECS)", (2018), 85/213, ISSN: 2151-2043, . BibTeX
    261. J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
    "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 79 - 80. BibTeX
    260. V. Sverdlov, A. Makarov, S. Selberherr:
    "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 57 - 58. BibTeX
    259. V. Sverdlov, S. Selberherr:
    "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions";
    Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 107 - 108. BibTeX
    258. V. Sverdlov, S. Selberherr:
    "A Single-Spin Switch";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 93 - 94. BibTeX
    257. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 87 - 88. BibTeX
    256. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics";
    BIT's Annual World Congress of Nano Science & Technology, Fukuoka; (invited) 2017-10-24 - 2017-10-26; in "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), 343. BibTeX
    255. V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr:
    "Non-Volatility by Spin in Modern Nanoelectronics";
    Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2017-10-09 - 2017-10-11; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2017), ISBN: 978-1-5386-2562-0, 7 - 14 doi:10.1109/MIEL.2017.8190061. BibTeX
    254. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spintronics as a Non-Volatile Complement to Nanoelectronics";
    Talk: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia; (invited) 2017-10-04 - 2017-10-06; in "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9, 10 page(s) . BibTeX
    253. V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr:
    "MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications";
    Talk: Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN), Milan, Italy; (invited) 2017-08-14 - 2017-08-18; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN)", (2017), 33 - 34. BibTeX
    252. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment";
    Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2017-07-08 - 2017-07-11; in "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9, 142 - 146. BibTeX
    251. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach";
    Talk: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 2017-06-26 - 2017-06-30; in "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0, 132 - 133. BibTeX
    250. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Electron Spin at Work in Modern and Emerging Devices";
    Talk: Energy-Materials-Nanotechnology Meeting on Quantum (EMN), Wien, Austria; (invited) 2017-06-18 - 2017-06-22; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN)", (2017), 31 - 33. BibTeX
    249. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study";
    Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 2017-06-05 - 2017-06-09; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), 88 - 90. BibTeX
    248. V. Sverdlov, S. Selberherr:
    "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
    Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 2017-05-28 - 2017-05-30; in "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869, 57. BibTeX
    247. S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
    "Exploiting Spin-Transfer Torque for Non-Volatile Computing";
    Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 2017-03-16 - 2017-03-18; in "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), 130. BibTeX
    246. V. Sverdlov, S. Selberherr:
    "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
    Talk: APS March Meeting, New Orleans, USA; 2017-03-13 - 2017-03-17; in "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503, . BibTeX
    245. V. Sverdlov, J. Weinbub, S. Selberherr:
    "Modeling Spin-Dependent Phenomena for New Device Applications";
    Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 45 - 46. BibTeX
    244. V. Sverdlov, J. Ghosh, S. Selberherr:
    "Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 7. BibTeX
    243. T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr:
    "Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 43. BibTeX
    242. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
    Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648. BibTeX
    241. V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
    "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210. BibTeX
    240. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
    "Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
    Talk: SISPAD Workshop, Nürnberg, Germany; 2016-09-05 in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), . BibTeX
    239. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
    Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2016-08-28 - 2016-09-01; in "Proceedings of SPIE Spintronics", (2016), 9931-93. BibTeX
    238. A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Silicon Spintronics";
    Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 2016-07-04 - 2016-07-08; in "Proceedings of the ICEM 2016", (2016), 1 page(s) . BibTeX
    237. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
    Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 2016-05-25 - 2016-05-27; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) . BibTeX
    236. T. Windbacher, V. Sverdlov, S. Selberherr:
    "Magnetic Nonvolatile Processing Environment";
    Talk: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia; (invited) 2016-05-19 - 2016-05-20; in "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", (2016), 42 - 43. BibTeX
    235. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Nanoelectronics with Spin";
    Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 2016-04-04 - 2016-04-06; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20. BibTeX
    234. V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
    "Silicon Spintronics";
    Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 2016-03-21 - 2016-03-24; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN)", (2016), 37 - 38. BibTeX
    233. V. Sverdlov, S. Selberherr:
    "Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures";
    Talk: APS March Meeting, Baltimore, USA; 2016-03-14 - 2016-03-18; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), 61/1, ISSN: 0003-0503, 1 page(s) . BibTeX
    232. V. Sverdlov, S. Selberherr:
    "Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 116 - 117. BibTeX
    231. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
    IEEE, in "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479. BibTeX
    230. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "A Novel Method of SOT-MRAM Switching";
    Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX
    229. V. Sverdlov, S. Selberherr:
    "Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
    Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX
    228. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
    Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 2015-11-16 - 2015-11-19; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16. BibTeX
    227. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
    Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 2015-10-12 - 2015-10-14; in "Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), 105 - 106. BibTeX
    226. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
    Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2015), ISBN: 978-4-86348-514-3, 140 - 141. BibTeX
    225. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
    Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 2015-09-24 - 2015-09-26; in "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), 175. BibTeX
    224. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
    Talk: European Materials Research Society (EMRS), Warsaw, Poland; 2015-09-15 - 2015-09-18; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) . BibTeX
    223. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313. BibTeX
    222. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357. BibTeX
    221. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
    Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36. BibTeX
    220. J. Ghosh, V. Sverdlov, S. Selberherr:
    "Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film";
    Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301961. BibTeX
    219. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "CMOS-Compatible Spintronic Devices";
    Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 2015-09-01 - 2015-09-04; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103. BibTeX
    218. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization";
    Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 2015-08-31 - 2015-09-01; in "Proceedings of the nanoHUB User Conference", (2015), 1. BibTeX
    217. J. Ghosh, V. Sverdlov, S. Selberherr:
    "Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 130. BibTeX
    216. V. Sverdlov, S. Selberherr:
    "Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 114. BibTeX
    215. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
    Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 2015-06-29 - 2015-07-02; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236. BibTeX
    214. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Silicon Spintronics: Recent Advances and Challenges";
    International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 2015-06-29 - 2015-06-30; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7. BibTeX
    213. V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
    "Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63. BibTeX
    212. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "A Universal Nonvolatile Processing Environment";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62. BibTeX
    211. D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spin Lifetime in MOSFETs: A High Performance Computing Approach";
    Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61. BibTeX
    210. V. Sverdlov, S. Selberherr:
    "Spin-Based CMOS-Compatible Devices";
    Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69. BibTeX
    209. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
    Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX
    208. V. Sverdlov, S. Selberherr:
    "Spin-Based Silicon and CMOS-Compatible Devices";
    Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX
    207. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Buffered Magnetic Logic Gate Grid";
    Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX
    206. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
    "Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
    Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 2015-05-20 - 2015-05-22; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58. BibTeX
    205. V. Sverdlov, S. Selberherr:
    "Spin-Based Devices for Future Microelectronics";
    Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 2015-05-04 - 2015-05-06; in "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 page(s) doi:10.1109/ISNE.2015.7132030. BibTeX
    204. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Silicon Spintronics";
    NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 2015-04-13 - 2015-04-16; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45. BibTeX
    203. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Silicon and CMOS-Compatible Spintronics";
    Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 2015-03-15 - 2015-03-17; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), 28, ISBN: 978-1-61804-286-6, 17 - 20. BibTeX
    202. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
    Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX
    201. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
    Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 2015-02-24 - 2015-02-27; in "Proceedings of 21st Iberchip Worshop", (2015), 23, . BibTeX
    200. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829. BibTeX
    199. A. Makarov, V. Sverdlov, S. Selberherr:
    "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
    G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451. BibTeX
    198. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "New Design of Spin-Torque Nano-Oscillators";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63. BibTeX
    197. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62. BibTeX
    196. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
    "Modeling Silicon Spintronics";
    Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 2014-09-23 - 2014-09-25; in "Abstracts 2014", (2014), 78. BibTeX
    195. V. Sverdlov, D. Osintsev, S. Selberherr:
    "Spin Behaviour in Strained Silicon Films";
    Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 2014-09-15 - 2014-09-18; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) . BibTeX
    194. D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596. BibTeX
    193. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 297 - 300 doi:10.1109/SISPAD.2014.6931622. BibTeX
    192. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films";
    Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 2014-07-28 - 2014-07-31; in "Book of Abstracts", (2014), 1. BibTeX
    191. J. Ghosh, V. Sverdlov, S. Selberherr:
    "Spin Diffusion in Silicon from a Ferromagnetic Contact";
    Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 165. BibTeX
    190. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
    Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166. BibTeX
    189. V. Sverdlov, A. Makarov, S. Selberherr:
    "Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
    Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 2014-07-06 - 2014-07-08; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19. BibTeX
    188. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
    Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26. BibTeX
    187. V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
    "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
    Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17. BibTeX
    186. V. Sverdlov, D. Osintsev, S. Selberherr:
    "Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
    Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456. BibTeX
    185. J. Ghosh, V. Sverdlov, S. Selberherr:
    "Spin Injection in Silicon: The Role of Screening Effects";
    Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 63 - 64. BibTeX
    184. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
    "Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
    Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60. BibTeX
    183. T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
    Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194. BibTeX
    182. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
    "Modeling Spin-Based Electronic Devices";
    International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 2014-05-12 - 2014-05-14; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081. BibTeX
    181. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "High Performance MRAM-Based Stateful Logic";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 117 - 120 doi:10.1109/ULIS.2014.6813912. BibTeX
    180. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
    "Modeling of Spin-Based Silicon Technology";
    Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891. BibTeX
    179. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
    Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 9 - 12 doi:10.1109/ULIS.2014.6813893. BibTeX
    178. A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Modeling Spin-Based Electronic Devices";
    Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 1 page(s) . BibTeX
    177. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain";
    Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), 59/1, 1 page(s) . BibTeX
    176. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
    "Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
    Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 - 2014-02-28; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89. BibTeX
    175. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
    Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX
    174. A. Makarov, V. Sverdlov, S. Selberherr:
    "Fast Switching STT-MRAM Cells for Future Universal Memory";
    Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 2013-12-17 - 2013-12-20; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) . BibTeX
    173. J. Ghosh, V. Sverdlov, S. Selberherr:
    "Influence of a Space Charge Region on Spin Transport in Semiconductor";
    Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 2013-12-11 - 2013-12-13; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3, 27. BibTeX
    172. A. Makarov, V. Sverdlov, S. Selberherr:
    "Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
    Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX
    171. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Enhancement in Strained Thin Silicon Films";
    Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX
    170. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
    Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714. BibTeX
    169. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
    Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457. BibTeX
    168. A. Makarov, V. Sverdlov, S. Selberherr:
    "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
    Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 2013-11-01 - 2013-11-02; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7. BibTeX
    167. A. Makarov, V. Sverdlov, S. Selberherr:
    "Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
    Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797. BibTeX
    166. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
    Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 - 2013-09-20; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886. BibTeX
    165. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 163 - 166 doi:10.1109/SISPAD.2013.6650600. BibTeX
    164. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618. BibTeX
    163. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 368 - 371 doi:10.1109/SISPAD.2013.6650651. BibTeX
    162. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration";
    Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208. BibTeX
    161. A. Makarov, V. Sverdlov, S. Selberherr:
    "Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
    Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69. BibTeX
    160. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
    Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101. BibTeX
    159. A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2013-08-25 - 2013-08-29; in "Proceedings of SPIE Spintronics", (2013), OP108-86. BibTeX
    158. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Non-Volatile Magnetic Flip Flop";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 2013-07-29 - 2013-08-02; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 page(s) . BibTeX
    157. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications";
    Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 2013-07-17 - 2013-07-19; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5, 1 page(s) . BibTeX
    156. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications";
    Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8, 2 page(s) doi:10.1109/NanoArch.2013.6623033. BibTeX
    155. A. Makarov, V. Sverdlov, S. Selberherr:
    "Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM";
    Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165. BibTeX
    154. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272. BibTeX
    153. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel MTJ-Based Shift Register for Non-Volatile Logic Applications";
    Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 36 - 37 doi:10.1109/NanoArch.2013.6623038. BibTeX
    152. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Design and Applications of Magnetic Tunnel Junction Based Logic Circuits";
    Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 2013-06-24 - 2013-06-27; in "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4, 157 - 160 doi:10.1109/PRIME.2013.6603122. BibTeX
    151. A. Makarov, V. Sverdlov, S. Selberherr:
    "Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ";
    Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339. BibTeX
    150. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films";
    Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70. BibTeX
    149. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates";
    Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 244 - 245. BibTeX
    148. A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75. BibTeX
    147. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
    Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77. BibTeX
    146. V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
    "Modeling Spin-Based Devices in Silicon";
    Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71. BibTeX
    145. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
    Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239. BibTeX
    144. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
    Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in "223th ECS Meeting", (2013), 894, ISBN: 978-1-56677-866-4, 1. BibTeX
    143. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates";
    Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 68 - 69. BibTeX
    142. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
    Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65. BibTeX
    141. V. Sverdlov, S. Selberherr:
    "Silicon Spintronics and its Applications";
    Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; (invited) 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 51 - 52. BibTeX
    140. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525. BibTeX
    139. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films";
    Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) . BibTeX
    138. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
    Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), 46, 1 page(s) . BibTeX
    137. A. Makarov, V. Sverdlov, S. Selberherr:
    "Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21. BibTeX
    136. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0, 33. BibTeX
    135. V. Sverdlov, A. Makarov, S. Selberherr:
    "Fast Switching in MTJs with a Composite Free Layer";
    Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291. BibTeX
    134. T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Fully Electrically Read- Write Magneto Logic Gates";
    Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in "Book of Abstracts", (2012), 1 page(s) . BibTeX
    133. A. Makarov, V. Sverdlov, S. Selberherr:
    "High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer";
    Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 2012-09-25 - 2012-09-27; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) . BibTeX
    132. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Modeling Spintronic Effects in Silicon";
    Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 2012-09-24 - 2012-09-28; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) . BibTeX
    131. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
    Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 - 2012-09-21; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162. BibTeX
    130. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems";
    Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 2012-09-17 - 2012-09-21; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2, 254 - 257 doi:10.1109/ESSDERC.2012.6343381. BibTeX
    129. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 225 - 228. BibTeX
    128. A. Makarov, V. Sverdlov, S. Selberherr:
    "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232. BibTeX
    127. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156. BibTeX
    126. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque";
    Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-6. BibTeX
    125. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
    Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-27. BibTeX
    124. D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
    "Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
    Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), 1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413. BibTeX
    123. A. Makarov, V. Sverdlov, S. Selberherr:
    "STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution";
    Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4. BibTeX
    122. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
    Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3. BibTeX
    121. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate";
    Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3. BibTeX
    120. V. Sverdlov, S. Selberherr:
    "MOSFET and Spin Transistor Simulations";
    Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; in "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 page(s) . BibTeX
    119. A. Makarov, V. Sverdlov, S. Selberherr:
    "Reduction of the Switching Current in Spin Transfer Torque Random Access Memory";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 2012-06-25 - 2012-06-29; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49. BibTeX
    118. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Memristive Charge- and Flux-Based Sensors";
    Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 2012-06-12 - 2012-06-15; in "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9, 4 page(s) . BibTeX
    117. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "State Drift Optimization of Memristive Stateful IMP Logic Gates";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 243 - 244. BibTeX
    116. A. Makarov, V. Sverdlov, S. Selberherr:
    "Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226. BibTeX
    115. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230. BibTeX
    114. A. Makarov, V. Sverdlov, S. Selberherr:
    "Recent Developments in Advanced Memory Modeling";
    Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0235-7, 49 - 52 doi:10.1109/MIEL.2012.6222795. BibTeX
    113. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements";
    Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 2012-04-29 - 2012-05-04; in "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 page(s) . BibTeX
    112. A. Makarov, S. Selberherr, V. Sverdlov:
    "Emerging Non-Volatile Memories for Ultra-Low Power Applications";
    Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 2012-04-23 - 2012-04-24; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24. BibTeX
    111. A. Makarov, V. Sverdlov, S. Selberherr:
    "Modeling Emerging Non-Volatile Memories: Current Trends and Challenges";
    Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 2012-04-01 - 2012-04-02; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056. BibTeX
    110. A. Makarov, V. Sverdlov, S. Selberherr:
    "New Trends in Microelectronics: Towards an Ultimate Memory Concept";
    Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 2012-03-14 - 2012-03-17; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887. BibTeX
    109. V. Sverdlov, A. Makarov, S. Selberherr:
    "Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer";
    Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) . BibTeX
    108. D. Osintsev, V. Sverdlov, S. Selberherr:
    "Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78. BibTeX
    107. H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing";
    Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
    106. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
    Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
    105. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
    Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
    104. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
    Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX
    103. D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
    "An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
    Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX
    102. A. Makarov, S. Selberherr, V. Sverdlov:
    "Modeling of Advanced Memories";
    Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568. BibTeX
    101. A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
    "Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
    Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181. BibTeX
    100. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
    Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) . BibTeX
    99. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
    Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444. BibTeX
    98. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049. BibTeX
    97. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
    Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189. BibTeX
    96. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
    Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238. BibTeX
    95. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
    Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229. BibTeX
    94. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
    Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX
    93. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
    Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX
    92. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
    Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64. BibTeX
    91. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
    "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
    Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2011-05-01 - 2011-05-06; in "Meeting Abstracts", (2011), MA2011-01(23): 1453, 1. BibTeX
    90. Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement";
    Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in "219th ECS Meeting", (2011), Vol.35, No.5, ISBN: 978-1-56677-866-4, 117 - 122 doi:10.1149/1.3570785. BibTeX
    89. A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr:
    "Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method";
    Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 2011-03-28 - 2011-04-01; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) . BibTeX
    88. D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
    "Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
    Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), . BibTeX
    87. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
    Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998. BibTeX
    86. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
    Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60. BibTeX
    85. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
    "Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100. BibTeX
    84. V. Sverdlov, S. Selberherr:
    "Strain Engineering Techniques: A Rigorous Physical Review";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), TH-05. BibTeX
    83. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
    "Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting";
    Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), TH-06. BibTeX
    82. M. Pourfath, V. Sverdlov, S. Selberherr:
    "Transport Modeling for Nanoscale Semiconductor Devices";
    Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2010-11-01 - 2010-11-04; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), 4, ISBN: 978-1-4244-5799-1, 1737 - 1740. BibTeX
    81. V. Sverdlov, S. Selberherr:
    "Modeling of Modern MOSFETs with Strain";
    Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina; (invited) 2010-11-01 - 2010-11-03; in "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3, 1 - 11. BibTeX
    80. A. Makarov, V. Sverdlov, S. Selberherr:
    "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
    Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934. BibTeX
    79. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
    "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding";
    Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 5 - 8 doi:10.1109/IWCE.2010.5677927. BibTeX
    78. A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr:
    "First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory";
    Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186. BibTeX
    77. A. Makarov, V. Sverdlov, S. Selberherr:
    "Monte Carlo Simulation of Bipolar Resistive Switching Memories";
    Talk: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22. BibTeX
    76. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
    "Enhanced Valley Splitting in Silicon Nanowires and Point Contacts";
    Poster: Nanoelectronics Days 2010, Aachen, Germany; 2010-10-04 - 2010-10-07; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 118. BibTeX
    75. A. Makarov, V. Sverdlov, S. Selberherr:
    "A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory";
    Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399. BibTeX
    74. A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517. BibTeX
    73. A. Makarov, V. Sverdlov, S. Selberherr:
    "Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
    Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39. BibTeX
    72. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
    "Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices";
    Talk: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 2010-08-01 - 2010-08-04; in "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274. BibTeX
    71. A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory";
    Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312. BibTeX
    70. A. Makarov, V. Sverdlov, S. Selberherr:
    "Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations";
    Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 141. BibTeX
    69. M. Pourfath, V. Sverdlov, S. Selberherr:
    "Modeling Demands for Nanoscale Devices";
    Talk: Device Research Conference, South Bend; (invited) 2010-06-21 - 2010-06-23; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214. BibTeX
    68. V. Sverdlov, S. Selberherr:
    "Modeling Floating Body Z-RAM Storage Cells";
    Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2010-05-16 - 2010-05-19; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0, 45 - 50 doi:10.1109/MIEL.2010.5490533. BibTeX
    67. V. Sverdlov, S. Selberherr:
    "Scalability of a Second Generation Z-RAM Cell: A Computational Study";
    Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 2010-03-28 - 2010-04-01; in "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9, 232 - 247. BibTeX
    66. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
    "Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model";
    Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 2010-03-18 - 2010-03-19; in "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72. BibTeX
    65. V. Sverdlov, O. Baumgartner, S. Selberherr:
    "Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films";
    Talk: APS March Meeting, Portland; 2010-03-15 - 2010-03-19; in "Bulletin American Physical Society (APS March Meeting 2010)", (2010), 49/2, B9.00001. BibTeX
    64. O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
    "Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2010-01-25 - 2010-01-27; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92. BibTeX
    63. V. Sverdlov, O. Baumgartner, S. Selberherr:
    "Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band";
    Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 2009-12-09 - 2009-12-11; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1, TP6-03.1 - 2. BibTeX
    62. V. Sverdlov, S. Selberherr:
    "Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach";
    Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 21, ISBN: 978-3-90188-237-1, 4 page(s) . BibTeX
    61. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
    "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
    Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), . BibTeX
    60. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Modeling Techniques for Strained CMOS Technology";
    Talk: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna; (invited) 2009-10-04 - 2009-10-09; in "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5, 3 - 18. BibTeX
    59. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252. BibTeX
    58. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films";
    Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396. BibTeX
    57. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr:
    "Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 2009-07-07 - 2009-07-11; in "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301. BibTeX
    56. V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr:
    "Subband Structure in Ultra-Thin Silicon Films";
    Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63. BibTeX
    55. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 2009-06-14 - 2009-06-19; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58. BibTeX
    54. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films";
    Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 2009-06-13 - 2009-06-14; in "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96. BibTeX
    53. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
    "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
    Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93. BibTeX
    52. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
    Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131. BibTeX
    51. V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
    "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
    Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158. BibTeX
    50. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
    "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
    Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156. BibTeX
    49. T. Windbacher, V. Sverdlov, S. Selberherr:
    "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
    Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 169 - 172 doi:10.1109/IWCE.2009.5091122. BibTeX
    48. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance";
    Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "215th ECS Meeting", (2009), 19/4, ISBN: 978-1-56677-712-4, 15 - 26. BibTeX
    47. S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
    "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
    Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522. BibTeX
    46. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
    "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
    Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), . BibTeX
    45. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
    "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
    Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. BibTeX
    44. V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr:
    "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 2009-03-18 - 2009-03-20; in "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280. BibTeX
    43. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices";
    Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58. BibTeX
    42. V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr:
    "Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82. BibTeX
    41. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Study of the Properties of Biotin-Streptavidin Sensitive Biofets";
    Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 2009-01-14 - 2009-01-17; in "Final Program and Book of Abstracts", (2009), 42. BibTeX
    40. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Study of the Properties of Biotin-Streptavidin Sensitive BioFETs";
    Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 2009-01-14 - 2009-01-17; in "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2, 24 - 30. BibTeX
    39. V. Sverdlov, S. Selberherr:
    "Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells";
    Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 2008-10-27 - 2008-10-29; in "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1, 380 - 384. BibTeX
    38. S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure:
    "Ultra-Scaled Z-RAM Cell";
    Talk: 2008 IEEE International SOI Conference, New Paltz; 2008-10-06 - 2008-10-09; in "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8, 157 - 158. BibTeX
    37. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger:
    "A General Bottom-Up Modeling Approach for BioFETs";
    Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 2008-09-29 - 2008-09-30; in "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008), . BibTeX
    36. V. Sverdlov, T. Windbacher, S. Selberherr:
    "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 145 - 148 doi:10.1109/SISPAD.2008.4648258. BibTeX
    35. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Simulation of Field-Effect Biosensors (BioFETs)";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 193 - 196 doi:10.1109/SISPAD.2008.4648270. BibTeX
    34. V. Sverdlov, S. Selberherr:
    "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
    Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 159 - 168. BibTeX
    33. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes";
    Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 2008-07-27 - 2008-08-01; in "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7, 507 - 508. BibTeX
    32. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
    "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics";
    Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254. BibTeX
    31. M. Pourfath, V. Sverdlov, H. Kosina:
    "On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors";
    Talk: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 2008-06-29 - 2008-07-03; in "1st Fone Conference Nanoelectronics 2008", (2008), 41. BibTeX
    30. V. Sverdlov, S. Selberherr:
    "Strain-Controlled Valley Splitting in Si-SiGe Heterostructures";
    Talk: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 2008-05-11 - 2008-05-14; in "Abstract Book", (2008), 20 - 21. BibTeX
    29. V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr:
    "Stress-Induced Valley Splitting in Silicon Thin Films";
    Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 2008-03-12 - 2008-03-14; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96. BibTeX
    28. V. Sverdlov, H. Kosina, S. Selberherr:
    "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
    Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 2008-01-23 - 2008-01-25; in "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42. BibTeX
    27. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
    "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
    Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX
    26. V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr:
    "Two-Band k.p Model for the Conduction Band in Silicon";
    Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224. BibTeX
    25. V. Sverdlov, H. Kosina:
    "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
    Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 92 - 93. BibTeX
    24. V. Sverdlov, H. Kosina, S. Selberherr:
    "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
    Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 2007-10-01 - 2007-10-05; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), O1-14, . BibTeX
    23. V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina:
    "Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter";
    Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79. BibTeX
    22. V. Sverdlov:
    "Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures";
    Talk: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 2007-09-23 - 2007-09-28; in "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), 63 - 64. BibTeX
    21. V. Sverdlov, H. Kosina, S. Selberherr:
    "Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model";
    Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 2007-09-19 - 2007-09-21; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) . BibTeX
    20. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory";
    Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6, 386 - 389. BibTeX
    19. T. Grasser, W. Gös, V. Sverdlov, B. Kaczer:
    "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization";
    Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2007-04-15 - 2007-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5, 268 - 280. BibTeX
    18. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs";
    Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 2007-01-24 - 2007-01-26; in "EUROSOI 2007", (2007), 39 - 40. BibTeX
    17. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
    Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX
    16. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Strain Engineering for CMOS Devices";
    Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2006-10-23 - 2006-10-26; in "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127. BibTeX
    15. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
    NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 2006-10-15 - 2006-10-19; in "NATO Advanced Research Workshop Conference Abstracts", (2006), 77 - 78. BibTeX
    14. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs";
    Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-18 - 2006-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4, 178 - 181. BibTeX
    13. H. Kosina, V. Sverdlov, T. Grasser:
    "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908. BibTeX
    12. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
    Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834. BibTeX
    11. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling of Advanced Semiconductor Devices";
    Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 2006-08-28 - 2006-09-01; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216. BibTeX
    10. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations";
    Talk: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18. BibTeX
    9. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
    "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
    Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30. BibTeX
    8. V. Sverdlov, H. Kosina, S. Selberherr:
    "Current Flow in Upcoming Microelectronic Devices";
    Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8. BibTeX
    7. V. Sverdlov, E. Ungersböck, H. Kosina:
    "Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations";
    Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2006-03-08 - 2006-03-10; in "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), 133 - 134. BibTeX
    6. V. Sverdlov, H. Kosina, S. Selberherr:
    "Current Transport in Nanoelectronic Semiconductor Devices";
    Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 2006-01-10 - 2006-01-13; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495. BibTeX
    5. V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling Current Transport in Ultra-Scaled Field Effect Transistors";
    Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2005-12-19 - 2005-12-21; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390. BibTeX
    4. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
    "Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs";
    Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2005), Cdrom Isbn: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96. BibTeX
    3. H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
    "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
    Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37. BibTeX
    2. V. Sverdlov:
    "Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays";
    Talk: International Conference on Unsolved Problems of Noise (UPON), Gallipoli; (invited) 2005-06-06 - 2005-06-10; in "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), 177 - 182. BibTeX
    1. A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr:
    "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach";
    Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 2005-01-19 - 2005-01-21; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72. BibTeX

    Talks and Poster Presentations (without Proceedings-Entry)

    7. J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov:
    "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software";
    Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX
    6. S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
    "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells";
    Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX
    5. V. Sverdlov:
    "Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell";
    Talk: LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France; (invited) 2019-06-28. BibTeX
    4. V. Sverdlov, D. Osintsev, S. Selberherr:
    "From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach";
    Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; (invited) 2014-01-27 - 2014-01-29; . BibTeX
    3. H. Kosina, V. Sverdlov:
    "Impact of Strain and Defects on CMOS Process and Device Performance";
    Talk: 15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece; (invited) 2007-06-20 - 2007-06-23; . BibTeX
    2. Y. Kinkhabwala, V. Sverdlov, K. Likharev:
    "Quasi-continuous Charge Transfer via 2D Hopping";
    Talk: APS March Meeting, Los Angeles; 2005-03-21 - 2005-03-25; . BibTeX
    1. V. Sverdlov, H. Kosina, Ch. Ringhofer, M Nedjalkov, S. Selberherr:
    "Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm";
    Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; 2004-11-04 - 2004-11-05; . BibTeX

    Habilitation Theses

    1. V. Sverdlov:
    "Strain-Induced Effects in Advanced MOSFETs";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2010), . BibTeX

    Doctor's Theses (authored and supervised)

    4. J. Ghosh:
    "Modeling Spin-Dependent Transport in Silicon";
    Reviewer: V. Sverdlov, M. Bescond; Institut für Mikroelektronik, 2016, oral examination: 2016-03-03. BibTeX
    3. D. Osintsev:
    "Modeling Spintronic Effects in Silicon";
    Reviewer: V. Sverdlov, D. Süss; Institut für Mikroelektronik, 2014, oral examination: 2014-05-28 doi:10.34726/hss.2014.24842. BibTeX
    2. H. Mahmoudi:
    "Devices and Circuits for Stateful Logic and Memristive Sensing Applications";
    Reviewer: V. Sverdlov, B. Meinerzhagen; Institut für Mikroelektronik, 2014, oral examination: 2014-04-28 doi:10.34726/hss.2014.24465. BibTeX
    1. A. Makarov:
    "Modeling of Emerging Resistive Switching Based Memory Cells";
    Reviewer: V. Sverdlov, S. Cristoloveanu; Institut für Mikroelektronik, 2014, oral examination: 2014-03-18 doi:10.34726/hss.2014.23875. BibTeX

    Scientific Reports

    3. H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr:
    "VISTA Status Report June 2009";
    (2009), 30 page(s) . BibTeX
    2. O. Baumgartner, W. Gös, A. Nentchev, F. Stimpfl, V. Sverdlov, S. Selberherr:
    "VISTA Status Report December 2007";
    (2007), 32 page(s) . BibTeX
    1. S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr:
    "VISTA Status Report June 2006";
    (2006), 32 page(s) . BibTeX

    Patents

    4. H. Mahmoudi, S. Selberherr, V. Sverdlov, T. Windbacher:
    "Spin Torque Magnetic Integrated Circuit";
    Patent: International, No. WO 2014/154497 A1 ; Patent priority number EP 13161375.4; submitted: 2014-03-13, granted: 2014-10-02. BibTeX
    3. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "RRAM Implication Logic Gates";
    Patent: International, No. WO 2014/079747 A1 ; Patent priority number EP 12193826.0; submitted: 2013-11-13, granted: 2014-05-30. BibTeX
    2. T. Windbacher, V. Sverdlov, S. Selberherr, H. Mahmoudi:
    "Spin Torque Magnetic Integrated Circuit";
    Patent: Europe, No. EP 2784 020 A1 ; submitted: 2013-03-27, granted: 2014-10-01. BibTeX
    1. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "RRAM Implication Logic Gates";
    Patent: Europe, No. EP 2 736 044 A1 ; submitted: 2012-11-22, granted: 2014-05-28. BibTeX

    Institute for Microelectronics
    Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
    Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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