LVA-Nr. 360.248, 3.0 Std.
After successful completion of the course, students will be able to:
Subject of course:
The lecture will give an overview of the manipulation of the conductivity of a semiconducting material in order to create sensor devices and their modeling and simulation. Furthermore, the course will build on existing semiconductor knowledge in order to introduce the beneficial uses of semiconductors beyond transistors for digital and analog circuitry. The course will discuss, but is not limited to, the following devices:
Diode temperature sensor: Students will study the P-N junction from a different angle. They will look into how this unique structure is being used as a temperature sensor and how to model it.
BioFET: The transducer element in BioFETs is an Ion-sensitive field-effect transistor (ISFET), which is commonly used to measure ion concentrations in a solution (such as pH). How a MOSFET can be modified to create an ISFET and BIOFET will be discussed as well as how these devices can be simulated.
Gas sensor: Chemical reaction taking place at the surface of a semiconductor metal oxide gas sensor will be described. In addition to electro-thermal-mechanical simulations of the complex MEMS structure required for these devices will be described.
CMOS image sensor: An understanding of the operation of a CMOS image sensor, its benefit against the alternatives, and techniques for its modeling will be described.
Optoelectronic sensors: Devices such as nondispersive infrared (NDIR) and single-photon avalanche diode (SPAD) sensors will be described. This will include a hands-on component working in a time domain finite difference (TDFD) environment to solve optoelectronic problems.
This course is offered within the Computational Electronics module of the Master programme Computational Science and Engineering and as an elective in the Master prgoramme Microelectronics and Photonics.
Further information and registration is available through TISS.
The course material is available through TUWEL.