hideaki_tsuchiya
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====== Hideaki Tsuchiya ====== | ====== Hideaki Tsuchiya ====== | ||
+ | {{: | ||
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===== Biography ===== | ===== Biography ===== | ||
+ | Hideaki Tsuchiya received Ph. D. degree in electronic engineering from Kobe University, Kobe, Japan, in 1993. | ||
+ | He is currently an Associate Professor with the Department of Electrical and Electronic Engineering, | ||
+ | From 1999 to 2000, he was a Visiting Scientist at the Unversity of Illinois at Urbana-Champaign, | ||
===== Wigner-specific research ===== | ===== Wigner-specific research ===== | ||
+ | We have applied a Wigner Monte Carlo technique to the electron transport analysis of III-V channel MOSFETs. The III-V channels are InGaAs and InP. We have found that the subthreshold property of III-V MOSFETs may be degraded due to the source-drain direct tunneling, even in devices with longer channels than those used in Si-MOSFETs, because III-V channels have electron effective masses significantly smaller than Si. | ||
===== Affiliation(s) ===== | ===== Affiliation(s) ===== | ||
+ | * Associate Professor, Department of Electrical and Electronic Engineering, | ||
- | ===== Email ===== | ||
- | |||
- | [[tsuchiya@eedept.kobe-u.ac.jp]] | ||
===== Additional information ===== | ===== Additional information ===== | ||
+ | |||
+ | * [[http:// | ||
hideaki_tsuchiya.1417441782.txt.gz · Last modified: 2014/12/01 13:49 by weinbub