Low Pressure PECVD Process Simulation
In a PECVD (plasma enhanced chemical vapour deposition) process as it is used for instance for the deposition of silicon nitride, gases are introduced into a deposition chamber. Within the reactor the gases are ionized and accelerated towards the wafer surface where the deposition of the desired film is achieved by a chemical reaction.
For the simulation of depostion with low pressure CVD (chemical vapour deposition) processes the radiosity model is applied within the simulation tools ELSA2D/3D. Thereby the local deposition rate at each surface position is determined by the particle flux coming from the reactor, the reflected particle flux from other parts of the simulated structure and from the sticking coefficient of the deposited atoms at the surface. Shading effects are implicitly considered within this model.