%PDF-1.4
%
1 0 obj
<>stream
application/pdfIEEEIEEE Journal of the Electron Devices Society;2018;6; ;10.1109/JEDS.2018.2829933MOSFETnanomaterialssemiconductor device modelinghysteresissemiconductor device reliabilitytwo-dimensional materialsTCAD modelingA Physical Model for the Hysteresis in MoS<sub>2</sub> TransistorsTheresia KnoblochGerhard RzepaYury Yu. IllarionovMichael WaltlFranz SchanovskyBernhard StampferMarco M. FurchiThomas MuellerTibor Grasser
IEEE Journal of the Electron Devices Society972 2018 6 10.1109/JEDS.2018.2829933978
endstream
endobj
2 0 obj
<>
endobj
3 0 obj
<>
endobj
4 0 obj
<>
endobj
5 0 obj
<>stream
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