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application/pdfIEEE2019 IEEE International Reliability Physics Symposium (IRPS);2019; ; ; Logic for memoryNBTIdefect band accessAIOx capGate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate DevicesB.J. O'SullivanR. RitzenthalerG. RzepaZ. WuE. Dentoni LittaO. RichardT. ConardV. MachkaoutsanP. FazanC. KimJ. FrancoB. KaczerT. GrasserA. SpessotD LintenN. Horiguchi
2019 IEEE International Reliability Physics Symposium (IRPS)1 March 20198
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