A large project (START) on "Simulation of Advanced Semiconductor Devices",
funded by the Austrian Federal Ministry for Science and Research (BMWF) through
the Austrian Science Fund (FWF), has entered into its third year with positive
international evaluation.
The project includes several research topics, such as modeling of novel
semiconductors (strained Si/SiGe, various III-Vs, as well as the Group IV-VI
material systems). The device applications include advanced high-frequency
high-power heterojunction bipolar transistors (HBTs) and high
electron mobility transistors (HEMTs), as well as quantum wires and
high-efficiency solar cells.
The physical material properties of wide ranges of material
compositions, temperatures, doping concentrations, etc. are analyzed using Monte Carlo (MC)
simulation. New 2D Ensemble Monte Carlo code was developed and verified
versus bulk MC code for different materials. It is used as a platform for the
development of 2D Wigner quantum MC code.
Physics-based analytical models for the lattice, thermal, band-structure, and
transport properties of various semiconductor materials, as well as models for
important high-field and high-doping effects taking place in the devices, are
derived and implemented in the device simulator Minimos-NT. The models are
calibrated against experimental data from our scientific partners. Novel device
structures are investigated, designed, and optimized.
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