B. Best Reported SiC Devices



Table B.1: Best reported high-voltage SiC devices.
DEVICES POLYTYPE
$ V_\mathrm{B}$
[kV]
$ R_\mathrm{on,sp}$
[m$ \Omega$cm$ ^2$]
$ V^2_\mathrm{B}$/ $ R_\mathrm{on,sp}$
[MW/cm$ ^2$]
GROUP
RECTIFIERS
SBD 4H 4.9 43 558 Purdue [189,190]
PiN 4H 4.5 42 482 RPI [191]
PiN 4H 19.5 65 5850 CREE [65,168]
JBS 4H 2.8 8 980 KTH-ABB [192]
MPS 4H 1.5 10 225 CREE [65,177]
POWER TRANSISTORS
UMOSFET 4H 5.05 105 243 Purdue [189]
UMOSFET 4H 3.06 121 77 Purdue [189]
DMOSFET 6H 1.8 46 70 SiCED [193,194]
DMOSFET 4H 2.4 42 137 CREE [65,181]
ACCUFET 4H 1.4 15.7 125 Purdue [189,169]
SEMOSFET 4H 5 88 284 CREE [65,195]
SIAFET 4H 6.1 732 51 CREE [65,196]
JFET 4H 5.5 218 139 CREE [65,197]
VJFET 4H 2 70 57 Hitachi [198]
VJFET 4H 3.5 25 490 SiCED [193,199]
BJT 4H 1.8 10.8 300 CREE [65,170]
BJT 4H 0.5 50 5 Purdue [189,200]
GTO 4H 3.1 16.6 579 CREE [65,171]



Table B.2: Best reported high-frequency devices.
RF TRANSISTORS
DEVICES POLYTYPE
OPERATING
FREQUENCY
[GHz]
POWER
DENSITY
[W/mm]
TOTAL
POWER
[W]
MODE GROUP
IMPATT
Diode
4H 9.9 0.3 243 Pulsed
Ioeff Inst.
[201]
IMPATT
Diode
4H 7.2 121
12 dBm
400 mA
9 kA/cm$ ^2$
Pulsed
Purdue
[189,202]
MESFET 4H 3.5 5.2 62 Pulsed
CREE
[65,203]
MESFET 4H 10 4.5 54 Pulsed
CREE
[65,204]
MESFET 4H 2 4 8 CW
Thomson
[205]
SIT 4H 1.3 1.6 16 CW
Northrop
Grumman
[70,206]
SAI-SIT 4H 3 1.51 150 Pulsed
Northrop
Grumman
[70,207]
GaN
HEMT
3.5 12.1 145 Pulsed
CREE
[65,203]
AlGaN
HEMT
10 4.2 50.1 Pulsed
CREE
[65,203]
AlGaN
HEMT
20 6.6 1.32 CW
HRL
Lab [208]
Si
MOSFET
1.9 0.32 2.4 CW
Hitachi
[209]
GaAS
MODEFT
2.16 2.22 200 Pulsed
Matsushita
[210]


T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation