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Next: 8.2.2 Printing of a Up: 8.2 Photoresist Exposure and Previous: 8.2 Photoresist Exposure and

8.2.1 Printing of a Contact Hole over Planar Substrate



  
Figure 8.18: PAC concentration after exposure and developed resist profile for contact hole printing over a planar silicon substrate for coherent illumination (left: best focus, right: 1 $ \mu$m defocus above).
\resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
....5 $\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REexposPlanarCohe.eps}} \resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
...$\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REexposPlanarCoheDef.eps}}
\resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
....5 $\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REdevelPlanarCohe.eps}} \resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
...$\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REdevelPlanarCoheDef.eps}}






  
Figure 8.19: PAC concentration after exposure and developed resist profile for contact hole printing over a planar silicon substrate for circular illumination (left: best focus, right: 1 $ \mu$m defocus above).
\resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
....5 $\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REexposPlanarCirc.eps}} \resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
...$\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REexposPlanarCircDef.eps}}
\resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
....5 $\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REdevelPlanarCirc.eps}} \resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
...$\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REdevelPlanarCircDef.eps}}






  
Figure 8.20: PAC concentration after exposure and developed resist profile for contact hole printing over a planar silicon substrate for quadrupole illumination (left: best focus, right: 1 $ \mu$m defocus above).
\resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
....5 $\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REexposPlanarQuad.eps}} \resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
...$\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REexposPlanarQuadDef.eps}}
\resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
....5 $\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REdevelPlanarQuad.eps}} \resizebox{0.45\textwidth}{!}{
\psfrag{xlab}{1.0 $\mu$ m}
\psfrag{ylab}{\rotateb...
...$\mu$ m}}
\psfrag{zlab}{0.7 $\mu$ m}
\includegraphics{REdevelPlanarQuadDef.eps}}



next up previous contents
Next: 8.2.2 Printing of a Up: 8.2 Photoresist Exposure and Previous: 8.2 Photoresist Exposure and
Heinrich Kirchauer, Institute for Microelectronics, TU Vienna
1998-04-17