Next: Eigene Publikationen
Up: Dissertation E. Leitner
Previous: Parallelisierung
Aga93
A.M. AGARWAL AND S.T. DUNHAM.
Determination of Silicon Point Defect Properties from Oxidation
Enhanced Diffusion of Buried Layers.
Appl.Phys.Lett., Vol. 63, No. 4, 1993, pp. 800-802.
Ain89
M. AINSWORTH, J.Z. ZHU, A.W. CRAIG, AND O.C. ZIENKIEWICZ.
Analysis of the Zienkiewicz-Zhu A-Posteriori Error Estimator in the
Finite Element Method.
Int.J.Numer.Meth.Eng., Vol. 28, No. 9, 1989, pp. 2161-2174.
Ant78
D.A. ANTONIADIS, A.G. GONZALES, AND R.W. DUTTON.
Boron in Near-Intrinsic and Silicon under Inert and Oxidizing Ambients-Diffusion and Segregation.
J.Electrochem.Soc., Vol. 125, No. 5, 1978, pp. 813-819.
Ass94
SEMICONDUCTOR INDUSTRY ASSOCIATION.
The National Technology Roadmap for Semiconductors, 1994.
Bab78
I. BABUSKA AND W.C. RHEINBOLDT.
A-Posteriori Error Estimates for the Finite Element Method.
Int.J.Numer.Meth.Eng., Vol. 12, No. 10, 1978, pp. 1597-1615.
Bab81
I. BABUSKA AND M.R. DORR.
Error Estimates for the Combined h and p Versions of Finite Element
Method.
Numer.Math., Vol. 37, 1981, pp. 252-277.
Ban81
R.E. BANK AND D.J. ROSE.
Global Approximate Newton Methods.
Numer.Math., Vol. 37, 1981, pp. 279-295.
Ban97
R.E. BANK AND R.K. SMITH.
Mesh Smoothing Using A-Posteriori Error Estimates.
SIAM J.Numer.Anal., Vol. 34, No. 3, 1997, pp. 979-997.
Boh95a
W. BOHMAYR, A. BURENKOV, J. LORENZ, H. RYSSEL, AND S. SELBERHERR.
Trajectory Split Method for Monte Carlo Simulation of Ion
Implantation.
IEEE Trans.Semiconductor Manufacturing, Vol. 8, No. 4, 1995,
pp. 402-407.
Boh95b
W. BOHMAYR AND S. SELBERHERR.
Trajectory Split Method for Monte Carlo Simulation of Ion
Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field
Oxide Corners.
In Proceedings: Int. Symp. on VLSI Technology, Systems, and
Applications, Taipei, Taiwan, 1995, pp. 104-107.
Bos96
F.J. BOSSEN AND P.S. HECKBERT.
A Pliant Method for Anisotropic Mesh Generation.
In Proceedings: 5th International Meshing Roundtable, 1996,
pp. 63-74.
Bra95
H. BRACHT, N.A. STOLWIJK, AND H. MEHRER.
Properties of Intrinsic Point Defects in Silicon Determined by Zinc
Diffusion Experiments under Nonequilibrium Conditions.
Physical Review B, Vol. 52, No. 23, 1995, pp. 16542-16560.
Cha96
H.S. CHAO, P.B. GRIFFIN, J.D. PLUMMER, AND C.S. RAFFERTY.
The Dose, Enery, and Time Dependence of Silicon Self-Implantation
Induced Transient Enhanced Diffusion at 750C.
Appl.Phys.Lett., Vol. 69, No. 14, 1996, pp. 2113-2115.
Con90
P. CONTI, N. HITSCHFELD, AND W. FICHTNER.
- An Octree-Based Mixed Element Grid Allocator for Adaptive
3D Device Simulation.
In Proceedings: Workshop on Numerical Modeling of Processes and
Devices for Integrated Circuits NUPAD III, Honolulu, 1990, pp. 25-26.
Dun93
S.T. DUNHAM.
Growth Kinetics of Disk-Shaped Extended Defects with Constant
Thickness.
Appl.Phys.Lett., Vol. 63, No. 4, 1993, pp. 464-466.
Dun95
S.T. DUNHAM AND C.D. WU.
Atomistic Models of Vacancy-Mediated Diffusion in Silicon.
J.Appl.Phys., Vol. 78, No. 4, 1995, p. 2362.
Eag94
D.J. EAGLESHAM, P.A. STOLK, H.J. GOSSMANN, AND J.M. POATE.
Implantation and Transient B Diffusion in Si: The Source of
Interstitials.
Appl.Phys.Lett., Vol. 65, No. 18, 1994, pp. 2305-2307.
Fah89
P.M. FAHEY, P.B. GRIFFIN, AND J.D. PLUMMER.
Point Defects and Dopant Diffusion in Silicon.
Review of Modern Physics, Vol. 61, No. 2, 1989, pp. 289-384.
Fai81
R.B. FAIR.
Concentration Profiles of Diffused Dopants.
In: Impurity Doping Processes in Silicon, Ed. by F.F.Y. WANG. North-Holland, Amsterdam, 1981, pp. 315-442.
Fis94a
C. FISCHER.
Bauelementsimulation in einer computergestützten Entwurfsumgebung.
Dissertation, Technische Universität Wien, 1994.
Fis94b
MINIMOS 6 User's Guide.
C. FISCHER, P. HABAfont size=-1>VS, O. HEINREICHSBERGER, H. KOSINA, PH. LINDORFER, P. PICHLER, H. PöTZL, C. SALA, A. SCHüTZ, S. SELBERHERR, M. STIFTINGER, AND M. THURNER.
Institut für Mikroelektronik, Technische Universität Wien,
Austria, March 1994.
Fis94c
C. FISCHER AND S. SELBERHERR.
Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold
Pivoting Preconditioners.
In Proceedings: Int. Workshop on Numerical Modeling of Processes
and Devices for Integrated Circuits NUPAD V, Honolulu, 1994, pp. 123-126.
Fle96
P. FLEISCHMANN AND S. SELBERHERR.
A New Approach to Fully Unstructured Three-dimensional Delaunay Mesh
Generation with Improved Element Quality.
In Proceedings: International Conference on Simulation of
Semiconductor Processes and Devices, Tokyo, Japan, 1996, Business Center for
Academic Societies Japan, pp. 129-130.
Gen97
A.H. GENCER AND S.T. DUNHAM.
A Predictive Model for Transient Enhanced Diffusion Based on
Evolution of {311} Defects.
J.Appl.Phys., Vol. 81, No. 2, 1997, pp. 631-636.
Gil89
M.D. GILES.
Defect-Coupled Diffusion at High Concentrations.
IEEE Trans.Computer-Aided Design, Vol. 8, No. 5, 1989,
pp. 460-467.
Gri95
P.B. GRIFFIN, S.W. CROWDER, AND J.M. KNIGHT.
Dose Loss in Phosphorus Implants due to Transient Diffusion and
Interface Segregation.
Appl.Phys.Lett., Vol. 67, No. 4, 1995, pp. 482-484.
Hal95
S. HALAMA, CH. PICHLER, G. RIEGER, G. SCHROM, T. SIMLINGER, AND S. SELBERHERR.
VISTA--User Interface, Task Level, and Tool Integration.
IEEE Trans.Computer-Aided Design, Vol. 14, No. 10, 1995,
pp. 1208-1222.
Hei77
J.C. HEINRICH, P.S. HUYAKORN, O.C. ZIENKIEWICZ, AND A.R. MITCHELL.
An Upwind Finite Element Scheme for Two Dimensional Convective
Transport Equations.
Int.J.Numer.Meth.Eng., Vol. 11, No. 1, 1977, pp. 131-144.
Hei93
O. HEINREICHSBERGER, M. THURNER, AND S. SELBERHERR.
Practical Use of a Hierarchical Linear Solver Concept for 3D MOS
Device Simulation.
In: Selberherr et al. [Sel93], pp. 85-88.
Hit93
N. HITSCHFELD, P. CONTI, AND W. FICHTNER.
Mixed Element Trees: A Generalization of Modified Octrees for the
Generation of Meshes for the Simulation of Complex 3-D Semiconductor Device
Structures.
IEEE Trans.Computer-Aided Design, Vol. 12, No. 11, 1993,
pp. 1714-1725.
Hob97
G. HOBLER, C.S. RAFFERTY, AND S. SENKADER.
A Model of {311} Defect Evolution Based on Nucleation Theory.
In Proceedings: International Conference on Simulation of
Semiconductor Processes and Devices, Cambridge, Massachusetts, 1997,
pp. 73-76.
Hor91
A. HORI, S. KAMEYAMA, M. SEGAWA, H. SHIMOMURA, AND H. OGAWA.
A Self-Aligned Pocket Implantation (SPI) Technology for
m-Dual Gate CMOS.
In Proceedings: Int.Electron Devices Meeting, 1991,
pp. 641-644.
Hu68
S.M. HU AND S. SCHMIDT.
Interactions in Sequential Diffusion Processes in Semiconductors.
J.Appl.Phys., Vol. 39, No. 9, 1968, pp. 4272-4283.
Hu74
S.M. HU.
Formation of Stacking Faults and Enhanced Diffusion in the Oxidation
of Silicon.
J.Appl.Phys., Vol. 45, No. 4, 1974, pp. 1567-1573.
Hwa96a
H. HWANG, D.-H. LEE, AND J.M. HWANG.
Degradation of MOSFETs Drive Current Due to Halo Ion Implantation.
In Proceedings: Int.Electron Devices Meeting, 1996,
pp. 567-570.
Hwa96b
H. HWANG, D.H. LEE, J.-G. AHN, J.S. BYUN, AND D. YANG.
Effect of Channeling of Halo Ion Implantation on Threshold Voltage
Shift of Metal Oxide Semiconductor Field-Effect Transistor.
Appl.Phys.Lett., Vol. 68, No. 7, 1996, pp. 938-939.
Jai75
R.K. JAIN AND R.J. VANOVERSTRAETEN.
Accurate Theoretical Arsenic Diffusion Profiles in Silicon from
Processing Data.
J.Electrochem.Soc., Vol. 122, No. 4, 1975, pp. 552-557.
Jim96
P.K. JIMACK.
A Best Approximation Property of the Moving Finite Element Method.
SIAM J.Numer.Anal., Vol. 33, No. 6, 1996, pp. 2286-2302.
Joe89
B. JOE.
Three-Dimensional Triangulations from Local Transformations.
SIAM J.Sci.Stat.Comput., Vol. 10, No. 4, 1989, pp. 718-741.
Joe91
B. JOE.
Construction of Three-Dimensional Delaunay Triangulations Using Local
Transformations.
Computer Aided Geometric Design, Vol. 8, No. 2, 1991,
pp. 123-142.
Joe95
B. JOE.
Construction of Three-Dimensional Improved-Quality Triangulations
Using Local Transformations.
SIAM J.Sci.Comput., Vol. 16, No. 6, 1995, pp. 1292-1307.
Jop93
W. JOPPICH AND S. MIJALKOVIC.
Multigrid Methods for Process Simulation.
Springer, Wien, 1993.
Lee68
H.B. LEE.
An Implementation of Gaussian Elimination for Sparse Systems of
Linear Equations.
In Proceedings: Sparse Matrices Symp., 1968, IBM, pp. 75-83.
Liu94
A. LIU AND B. JOE.
Relationship Between Tetrahedron Shape Measures.
BIT, Vol. 34, 1994, pp. 268-287.
Liu95
A. LIU AND B. JOE.
Quality Local Refinement of Tetrahedral Meshes Based on Bisection.
SIAM J.Sci.Comput., Vol. 16, No. 6, 1995, pp. 1269-1291.
Man80
M.M. MANDURAH, K.C. SARASWAT, AND C.R. HELMS.
Dopant Segregation in Polycrystalline Silicon.
J.Appl.Phys., Vol. 51, No. 11, 1980, pp. 5755-5763.
Mil94
J.J.H. MILLER AND S. WANG.
A Tetrahedral Mixed Finite Element Method for the Stationary
Semiconductor Continuity Equations.
SIAM J.Numer.Anal., Vol. 31, No. 1, 1994, pp. 196-216.
Mor54
F.J. MORIN AND J.P. MAITA.
Electrical Properties of Silicon Containing Arsenic and Boron.
Physical Review, Vol. 96, No. 1, 1954, p. 28.
Ons31
L. ONSAGER.
Reciprocal Relations in Irreversible Processes II.
Physical Review, Vol. 38, December 1931, pp. 2265-2279.
Orl89
M. ORLOWSKI.
New Model for Dopant Redistribution at Interfaces.
Appl.Phys.Lett., Vol. 55, No. 17, 1989, pp. 1762-1764.
Raf96
C.S. RAFFERTY, G.H. GILMER, M. JARAIZ, D. EAGLESHAM, AND H.J. GOSSMANN.
Simulation of Cluster Evaporation and Transient Enhanced Diffusion in
Silicon.
Appl.Phys.Lett., Vol. 68, No. 17, 1996, pp. 2395-2397.
Saa90
Y. SAAD.
SPARSKIT: A Basic Tool Kit for Sparse Matrix Computations.
Technical Report, RIACS, NASA Ames Research Center, Moffett Field, CA
94035, May 1990.
Sch69
D.L. SCHARFETTER AND H.K. GUMMEL.
Large-Signal Analysis of a Silicon Read Diode Oscillator.
IEEE Trans.Electron Devices, Vol. ED-16, 1969, pp. 64-77.
Sch81
S.A. SCHWARZ, R.W. BARTON, C.P. HO, AND C.R. HELMS.
Studies of Phosphorus Pile-Up at the Si-SiO2 Interface Using Auger
Sputtering Profiling.
J.Electrochem.Soc., Vol. 128, No. 5, 1981, pp. 1101-1106.
Sel93
Ed. by S. SELBERHERR, H. STIPPEL, AND E. STRASSER.
Simulation of Semiconductor Devices and Processes, Wien, 1993,
Vol. 5, Springer.
Sha75
D. SHAW.
Self- and Impurity Diffusion in Ge and Si.
Phys.Stat.Sol., Vol. 72, 1975, pp. 11-39.
Shi89
N. SHIGYO, T. WADA, AND S. YASUDA.
Discretization Problem for Multidimensional Current Flow.
IEEE Trans.Computer-Aided Design, Vol. 8, No. 10, 1989,
pp. 1046-1050.
Sim94
T. SIMLINGER, C. FISCHER, R. DEUTSCHMANN, AND S. SELBERHERR.
MINIMOS NT - A Hydrodynamic Simulator for High Electron Mobility
Transistors.
In Proceedings: 8th GaAs Simulation Workshop, Duisburg, 1994.
Str93a
E. STRASSER AND S. SELBERHERR.
A General Simulation Method for Etching and Deposition Processes.
In: Selberherr et al. [Sel93], pp. 357-360.
Str93b
E. STRASSER, K. WIMMER, AND S. SELBERHERR.
A New Method for Simulation of Etching and Deposition Processes.
In Proceedings: Int. Workshop on VLSI Process and Device
Modeling, Nara, Japan, 1993, pp. 54-55.
Str94
E. STRASSER.
Simulation von Topographieprozessen in der Halbleiterfertigung.
Dissertation, Technische Universität Wien, 1994.
Tan82
T.Y. TAN AND U.M. GöSELE.
Oxidation-Enhanced or Retarded Diffusion and the Growth or Shrinkage
of Oxidation-Induced Stacking Faults in Silicon.
Appl.Phys.Lett., Vol. 40, No. 7, 1982, pp. 616-619.
TMA95
TMA TSUPREM-4, Two-Dimensional Process Simulation Program, Version 6.2.
TECHNOLOGY MODELING ASSOCIATES, INC.
Palo Alto, CA, June 1995.
vdV93
H.A. VAN DER VORST, D.R. FOKKEMA, AND G.L. SLEIJPEN.
Further Improvements in Nonsymmetric Hybrid Iterative Methods.
In: Selberherr et al. [Sel93], pp. 89-92.
Vem81
V. VEMURI AND W.J. KARPLUS.
Digital Computer Treatment of Partial Differential Equations.
Prentice-Hall, New Jersey, 1981.
Zhu90
J.Z. ZHU AND O.C. ZIENKIEWICZ.
Superconvergence Recovery Technique and A-Posteriori Error
Estimators.
Int.J.Numer.Meth.Eng., Vol. 30, 1990, pp. 1321-1339.
Zie87
O.C. ZIENKIEWICZ AND J.Z. ZHU.
A Simple Error Estimator and Adaptive Procedure for Practical
Engineering Analysis.
Int.J.Numer.Meth.Eng., Vol. 24, No. 2, 1987, pp. 337-357.
Zie89
O.C. ZIENKIEWICZ AND R.L. TAYLOR.
Basic Formulation and Linear Problems, fourth edition, Vol. 1
of The Finite Element Method.
McGraw-Hill, London, 1989.
Zie91
O.C. ZIENKIEWICZ AND R.L. TAYLOR.
Solid and Fluid Mechanics, Dynamics and Non-linearity, fourth
edition, Vol. 2 of The Finite Element Method.
McGraw-Hill, London, 1991.
Ernst Leitner
1997-12-30