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Next: 4.3.4 Transient Dopant Activation Up: 4.3.3 Transient Enhanced Diffusion Previous: Model Parameters

Model Verification

  To examine the applicability of the transient enhanced diffusion model, we present simulation results for a temperature range from tex2html_wrap_inline4703 to tex2html_wrap_inline4707 . Figure 4.3-5 illustrates the characteristic diffusion behavior at tex2html_wrap_inline4703 . In the early stages of annealing there is enormous diffusion enhancement occuring, which is nearly finished after 15min annealing time. Even longer annealing up to 4h does not change the profile significantly.

In the tex2html_wrap_inline4705 annealing case there is a diminishing influence of the transient behavior recognized (see Fig. 4.3-6). Due to the increased dopant diffusivity the profiles are determined by the dopant self diffusion and the point defect enhancement. However, there is still significant increase in diffusivity due to point defect enhancement.

A similar trend is exhibited at tex2html_wrap_inline4707 annealing temperature (see Fig. 4.3-7). At this temperature the enhanced diffusion lasts only a few seconds and the dopant redistributions predicts the final profile. The shoulder of the profile is coincident with the solubility limit and the boron precipitates are completely dissolved. The disagreement of the profiles in the tail regions might be related to the choice of the initial point defect profiles. The experimental profiles suggest some additional enhancement at the slope of the distributions.

   figure1276
Figure 4.3-5: Simulation results for boron transient enhanced diffusion at tex2html_wrap_inline4703 for 15min and 4h. Boron concentration above the solid solubility limit is immobile due to clustering.

The given diffusion model results show good agreement with the experimental data and are able to predict the transient enhanced diffusion effect during furnace as well as RTA annealing. The most effective modeling parameters are the recombination velocity tex2html_wrap_inline5279 of the point defect concentrations and the interstitial mechansim enhancement factor tex2html_wrap_inline5119 . Where tex2html_wrap_inline5279 determines the available amount of point defects above the thermal euqilibrium, tex2html_wrap_inline5119 specifies the resulting dopant diffusion enhancement.

     figure1284
Figure 4.3-6: Simulation results for boron at tex2html_wrap_inline4705 for 30min, 50min and 10h. The influence of the transient enhancement is diminished due to higher dopant diffusivity.
Figure 4.3-7: RTA simulation results for boron transient enhanced diffusion at tex2html_wrap_inline4707 for 10s and 5min. The boron aggregates are completely dissolved. Data are taken from [Cow90a].


next up previous contents
Next: 4.3.4 Transient Dopant Activation Up: 4.3.3 Transient Enhanced Diffusion Previous: Model Parameters

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