Own Publications

1

S. Dhar, E. Ungersbock, H. Kosina, T. Grasser, and S. Selberherr, "Electron Mobility Model for $\langle110\rangle$ Stressed Silicon Including Strain-Dependent Mass," IEEE Trans.Nanotechnology, vol. 6, no. 1, pp. 97-100, 2007.

2

V. Sverdlov, E. Ungersboeck, H. Kosina, and S. Selberherr, "Volume inversion mobility in SOI MOSFETs for different thin body orientations," Solid-State Electron., vol. 51, pp. 299-305, 2007.

3

S. Dhar, H. Kosina, G. Karlowatz, S. E. Ungersboeck, T. Grasser, and S. Selberherr, "High-Field Electron Mobility Model for Strained-Silicon Devices," IEEE Trans.Electron Devices, vol. 53, pp. 3054-3062, Dec. 2006.

4

S. Dhar, H. Kosina, G. Karlowatz, E. Ungersboeck, T. Grasser, and S. Selberherr, "A tensorial high-field electron mobility model for strained silicon," SiGe Technology and Device Meeting, ISTDM 2006, pp. 72-73, 2006.

5

S. Dhar, E. Ungersboeck, H. Kosina, T. Grasser, and S. Selberherr, "Analytical Modeling of Electron Mobility in Strained Germanium," in Proc. Simulation of Semiconductor Processes and Devices, (Monterey, USA), pp. 39-42, Sept. 2006.

6

S. Dhar, E. Ungersboeck, H. Kosina, T. Grasser, and S. Selberherr, "Electron Mobility Model for $\langle110\rangle$ Stressed Si Including Strain-Dependent Mass," in Abstracts IEEE 2006 Silicon Nanoelectronics Workshop, (Honolulu, USA), pp. 153-154, June 2006.

7

S. Dhar, E. Ungersboeck, M. Nedjalkov, and V. Palankovski, "Monte Carlo Simulation of the Electron Mobility in Strained Silicon," in The Fifteenth International Scientific and Applied Science Conference Book 2, (Sozopol, Bulgaria), pp. 169-173, 2006.

8

G. Karlowatz, E. Ungersboeck, W. Wessner, and H. Kosina, "Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon," in Proc. Simulation of Semiconductor Processes and Devices, (Monterey, USA), pp. 63-66, Sept. 2006.

9

G. Karlowatz, E. Ungersboeck, W. Wessner, H. Kosina, and S. Selberherr, Analysis of Hole Transport in Arbitrarily Strained Germanium, vol. 3 of ECS Transactions.
The Electrochemical Society, 2006.

10

M. Karner, E. Ungersboeck, A. Gehring, S. Holzer, H. Kosina, and S. Selberherr, "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies," in Proc. Simulation of Semiconductor Processes and Devices, (Monterey, USA), pp. 314-317, Sept. 2006.

11

T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, P. Wong, Y. Nishi, and K. Saraswat, "Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs," in Proc. Intl. Electron Devices Meeting, pp. 36.2.1-36.2.4, 11-13 Dec. 2006.

12

V. Palankovski, A. Marchlewski, E. Ungersboeck, and S. Selberherr, "Identification of Tranport Parameters for Gallium Nitride Based Semiconductor Devices," in Proc. of 5th International Symposium on Mathematical Modeling, (Vienna, Austria), pp. 14-1-14-9, 2006.

13

V. Sverdlov, E. Ungersboeck, H. Kosina, and S. Selberherr, "Orientation Dependence of the Low Field Mobility in Double-and Single-gate SOI FETs," in Proc. 36th European Solid-State Device Research Conf., (Montreux, Switzerland), pp. 178-181, 2006.

14

V. Sverdlov, E. Ungersboeck, and H. Kosina, "Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations," in EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits, (Grenoble, France), pp. 133-134, 2006.

15

V. Sverdlov, E. Ungersboeck, H. Kosina, and S. Selberherr, "Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations," in Abstracts IEEE 2006 Silicon Nanoelectronics Workshop, (Honolulu, USA), pp. 17-18, June 2006.

16

V. Sverdlov, E. Ungersboeck, and H. Kosina, "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions," in NATO Advanced Research Workshop Conference Abstracts, (Sudak, Ukraine), pp. 77-78, 2006.

17

E. Ungersboeck and H. Kosina, "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers," J.Comput.Electronics, vol. 5, pp. 79-83, July 2006.

18

E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr, "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon," in 11th International Workshop on Computational Electronics Book of Abstracts, pp. 141-142, 2006.

19

E. Ungersboeck, V. Sverdlov, H. Kosina, and S. Selberherr, "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs," in Proc. Simulation of Semiconductor Processes and Devices, (Monterey, USA), pp. 43-46, Sept. 2006.

20

E. Ungersboeck, V. Sverdlov, H. Kosina, and S. Selberherr, "Strain Engineering for CMOS Devices," in 2006 Eight International Conference on Solid-State and Integrated Cicuit Technology Proceedings (Part 1 of 3), pp. 124-127, 2006.

21

E. Ungersboeck, V. Sverdlov, H. Kosina, and S. Selberherr, Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations, vol. 3 of ECS Transactions.
The Electrochemical Society, 2006.

22

E. Ungersboeck, V. Sverdlov, H. Kosina, and S. Selberherr, Modeling of Advanced Semiconductor Devices, vol. 4 of ECS Transactions.
The Electrochemical Society, 2006.

23

E. Ungersboeck, V. Sverdlov, H. Kosina, and S. Selberherr, "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations," in Meeting Abstracts: 210th Meeting of The Electrochemical Society, p. 1397, 2006.

24

E. Ungersboeck, H. Kosina, and S. Selberherr, "The Influence of Stress on Inversion Layer Mobility," in Abstracts Advanced Heterostructure Workshop, (Kona, USA), pp. TH-2, 2006.

25

S. Dhar, G. Karlowatz, E. Ungersboeck, and H. Kosina, "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon," in Proc. Simulation of Semiconductor Processes and Devices, (Tokio, Japan), pp. 223-226, 01-03 Sept. 2005.

26

S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, "Electron Mobility Model for Strained-Si Devices," IEEE Trans.Electron Devices, vol. 52, no. 4, pp. 527-533, 2005.

27

S. Dhar, G. Karlowatz, E. Ungersboeck, H. Kosina, and S. Selberherr, "Modeling of Velocity Field Characteristics in Strained Si," in Proceedings of the Fourteenth International Workshop on the Physics of Semiconductor Devices, pp. 1060-1063, 2005.

28

S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, "A Physically-Based Electron Mobility Model for Strained Si Devices," in Proc. NSTI Nanotech, pp. 13-16, 2005.

29

M. Pourfath, A. Gehring, E. Ungersboeck, H. Kosina, S. Selberherr, B. Cheong, and W. Park, "Separated carrier injection control in carbon nanotube field-effect transistors," J.Appl.Phys., vol. 97, p. 106103, 2005.

30

M. Pourfath, E. Ungersboeck, A. Gehring, B. Cheong, W. Park, H. Kosina, and S. Selberherr, "Optimization of Schottky barrier carbon nanotube field effect transistors," Microelectronic Engineering, vol. 81, no. 2-4, pp. 428-433, 2005.

31

M. Pourfath, E. Ungersboeck, A. Gehring, H. Kosina, S. Selberherr, W. PARK, and B. Cheong, "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors," J.Comput.Electronics, vol. 4, no. 1, pp. 75-78, 2005.

32

E. Ungersboeck, M. Pourfath, H. Kosina, A. Gehring, B. Cheong, W. Park, and S. Selberherr, "Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors," IEEE Trans.Nanotechnology, vol. 4, no. 5, p. 533, 2005.

33

E. Ungersboeck and H. Kosina, "The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers," in Proc. Simulation of Semiconductor Processes and Devices, (Tokio, Japan), pp. 311-314, 01-03 Sept. 2005.

34

E. Ungersboeck and H. Kosina, "Monte Carlo study of electron transport in strained silicon inversion layers," in 15th Workshop on Modeling and Simulation of Electron Devices, (Pisa, Italy), pp. 10-11, July 2005.

35

S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, "Modeling of Electron Mobility in Strained Si Devices," in Proc. SAFE, pp. 793-796, 2004.

36

M. Nedjalkov, H. Kosina, E. Ungersboeck, and S. Selberherr, "A quasi-particle model of the electron-Wigner potential interaction," Semicond.Sci.Technol., vol. 19, no. 4, pp. S226-S228, 2004.

37

M. Pourfath, E. Ungersboeck, A. Gehring, B.-H. Cheong, H. Kosina, and S. Selberherr, "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors," in Proc. Simulation of Semiconductor Processes and Devices, (Munich, Germany), pp. 149-152, Sept. 2004.

38

M. Pourfath, E. Ungersboeck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, and S. Selberherr, "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors," in 10th International Workshop on Computational Electronics Book Abstracts, (West Lafayette, USA), pp. 237-238, 2004.

39

M. Pourfath, E. Ungersboeck, A. Gehring, B. Cheong, W. Park, H. Kosina, and S. Selberherr, "Improving the ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors," in Proc. 34th European Solid-State Device Research Conf., (Leuven, Belgium), pp. 429-432, 2004.

40

M. Pourfath, E. Ungersboeck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, and S. Selberherr, "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors," in Nano and Giga Challenges in Microelectronics Book of Abstracts, (Krakow, Poland), p. 201, 2004.

41

E. Ungersboeck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, and S. Selberherr, "Optimization of Carbon Nanotube Field Effect Transistors," in Proceedings of the Symposium on Nano Device Technology, SNDT, pp. 43-46, 2004.

42

E. Ungersboeck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, and W. Choi, "Analysis of Carrier Transport in Carbon Nanotube FET Devices," in Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices, pp. 1060-1063, 2003.

43

E. Ungersboeck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, and W. B. Choi, "Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors," in Proc. 33rd European Solid-State Device Research Conf., (Estoril, Portugal), pp. 411-414, 2003.

Table 1: Publication statistics.

	Author	Co-Author	Total
Journals & Contributions to books	5	8	13
Conferences	9	21	30
Total	14	29	43

E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology