Basic Assumptions



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Basic Assumptions

 

Dopants react with point defects via the reaction (3.2-35); point defects and dopant point-defect pairs may react with electrons and holes (3.2-36) - (3.2-39). Reactions according to the Frank-Turnbull mechanism ( and ) are neglected. The superscript represents the charge state of the particle.

     

Assuming that the reactions with electrons and holes is fast compared to diffusion phenomena, the reactions (3.2-36) - (3.2-39) have reached the equilibrium state, and we can use the law of mass action to set up a relation between the concentrations of particles in various charge states. Denoting the concentration of particle in charge state , the total point defect concentration and the total dopant point-defect pair concentration can be written as (3.2-40) and (3.2-41), respectively. The concentrations of particles in the different charges states and are related to the concentrations of the neutral particles and by (3.2-42) and (3.2-43), respectively. There, is the electron concentration, and is the intrinsic carrier concentration.

 

 

 

 

The basic idea of pair diffusion is that a substitutional particle cannot diffuse just by itself. Particles residing on substitutional sites get paired with point defects and move as dopant point-defect pairs. With the charge state of the substitutional dopant we get the equations of the particle fluxes (3.2-44) - (3.2-46).

 

 

 

Applying relations (3.2-40) - (3.2-43) we end up at (3.2-47) and (3.2-48) for the fluxes of the total concentrations, where , are mean diffusion coefficients and , are mean electric charges.

 

 

 

 

The local charge neutrality approximation (3.2-51) together with the relations from Boltzmann statistics (, ) provide the expression for the electrostatic potential (3.2-51). Neglecting the charges caused by point defects and dopant point-defect pairs, which is only justified as soon as dopants are primarily at substitutional sites, we obtain (3.2-52) for the net active concentration and (3.2-53) for the electric field.

 

 

 

The reaction of dopants with point defects via () accounts for the generation and recombination of dopant point-defect pairs . A generation-recombination term has to be included in the conservation laws for the dopant point-defect pairs (3.2-54) and dopants (3.2-55), as well as point defects (3.2-56). The Frenkel-pair mechanism () accounts for the recombination of interstitials and vacancies and is included as in the conservation law for point defects.

 

 

 

is modeled according to the law of mass action as (3.2-57). The rate constants for generation and annihilation are chosen to describe the kinetics between the neutral concentrations , and . The Frenkel-pair constant is the reaction rate with which the interstitial concentration and vacancy concentration tend to approach their equilibrium values and , respectively.

 



next up previous contents
Next: RTA Peculiarities Up: 3.2.4 Rapid Thermal Annealing Previous: 3.2.4 Rapid Thermal Annealing



Martin Stiftinger
Wed Oct 19 13:03:34 MET 1994