Publications Vito Simonka
21 recordsPublications in Scientific Journals
Talks and Poster Presentations (with Proceedings-Entry)
10. | Diamantopoulos, G., Manstetten, P., Gnam, L., Simonka, V., Aguinsky, L., Quell, M., Toifl, A., Hössinger, A., Weinbub, J. (2019). Recent Advances in High Performance Process TCAD. In CSE19 Abstracts (p. 335), Atlanta, GA, USA. (reposiTUm) | |
9. | Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018). Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4h-Silicon Carbide. In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT) (pp. 42–44), Barcelona, Spain. (reposiTUm) | |
8. | Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018). Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride. In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551728 (reposiTUm) | |
7. | J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018). | |
6. | Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J. (2017). Computational and Numerical Challenges in Semiconductor Process Simulation. In CSE17 Abstracts (p. 46), Atlanta, GA, USA. (reposiTUm) | |
5. | V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017). | |
4. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017). Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide. In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085280 (reposiTUm) | |
3. | Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016). Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations. In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440094 (reposiTUm) | |
2. | Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016). Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling. In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 128–129), Bologna, Italy. (reposiTUm) | |
1. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016). Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation. In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605190 (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
2. | Simonka, V. (2018). Advancements in Annealing and Oxidation Steps for Compound Semiconductor Power Devices. Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual, Non-EU. (reposiTUm) | |
1. | Simonka, V. (2017). Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav. Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia, EU. (reposiTUm) | |
Doctor's Theses (authored and supervised)
1. | V. Simonka: "Thermal Oxidation and Dopant Activation of Silicon Carbide"; Supervisor, Reviewer: S. Selberherr, J. Weinbub, Y. Hijikata, U. Schmid; Institut für Mikroelektronik, 2018; oral examination: 2018-11-05. https://doi.org/10.34726/hss.2018.60302 | |