Our manuscripts titled Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects and Statistical Characterization of BTI and RTN using pMOS Arrays have been accepted at the International Integrated Reliability Workshop (IIRW).
The event will take place in October 13-17, 2019 Fallen Leaf Lake, CA, USA and we wish our colleagues, Dominic and Bernhard a successful IIRW 2019!
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Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics