PhD, Senior Postdoc
Tel.Nr.: +43 1 58801-36025
Room.Nr.: CD 05 11
|Has been working for the IµE since 15-01-2008.|
Stanislav Tyaginov was born in Leningrad (now Saint-Petersburg) in 1978. He received his MS degree in Physics (specialization: the physics of semiconductors) in 2002 and his Doctoral degree in Physics in 2006 (his PhD was devoted to the problem of the impact of insulator thickness non-uniformities on MOS tunnel structure characteristics). He joined the Institute for Microelectronics in January 2008 as a post-doc researcher. His scientific interests include the modeling of HCI-related degradation and TDDB as well as tunneling phenomena in MOS devices.