Professors
![]() |
|
|||
| Electromigration-Induced Growth of Silicon Nanowires |
![]() |
|
|||
| Physics-Informed Compact Modeling for Design-Technology Co-Optimization |
![]() |
|
|||
| Numerical Modeling of Nanostructured Semiconductor Devices |
![]() |
|
|||
| Edge Modes Conductance in Narrow MoS2 Nanoribbons in a Topological Phase |
![]() |
|
|||
| Challenges for Electronic Circuits Made from Devices Based on 2D Materials |
![]() |
|
|||
| Coherent Wigner Dynamics in a Tunable Barrier Quantum Dot |
Administration
Researchers
![]() |
|
|||
| A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping |
![]() |
|
|||
| Solving the Schrödinger-Poisson Equation on GPUs |
![]() |
|
|||
| Variability due to Interfacial Disorder in Si-based Spin Qubits |
![]() |
|
|||
| Exploring Bi2SeO5 as a Promising Gate Insulator for 2D Semiconductor-Based Field-Effect Transistors |
![]() |
|
|||
| Improving the Energy Efficiency of SOT-Assisted STT-MRAM with Reinforcement Learning |
![]() |
|
|||
| Monte Carlo Methods for Solving The Winger Equation in Linear Electromagnetic Fields |
![]() |
|
|||
| Impact of Bias Temperature Instability on the Performance of SiC-based MOSFETs for High Power Electronics |
![]() |
|
|||
| Comphy – A Compact Physics Framework for the Simulation of Reliability Issues in 2D Nanoelectronics. |
![]() |
|
|||
| Improved Stability of 2D Material-Based Transistors by Fermi-Level Tuning |
![]() |
|
|||
| Exploring the Global Structure of the Solution Space for a Simple Schrödinger-Poisson Model |
![]() |
|
|||
| Automatic Differentiation in Scientific Computing |
![]() |
|
|||
| Machine Learning-Based Molecular Dynamics Accelerated by Neuromorphic Hardware |
![]() |
|
|||
| Impact of Voltage-Controlled Magnetic Anisotropy on Spin-Orbit Torque MRAM Switching |
![]() |
|
|||
| Fabrication of 2D-FET Devices with Emerging Gate Insulator Materials and Their Reliability Analysis |
![]() |
|
|||
| Capacitance-Voltage Measurements using a Mercury Prober |
![]() |
|
|||
| Impact of Defects on the Threshold Voltage Drift in pMOS Transistors Employing SiO2 |
![]() |
|
|||
| Modeling the Hysteresis in the Current-Voltage Characteristics of Trench 4H-SiC MOSFETs |























































