No publications of this type.

• [PJ-37] Giovanelli, Giulia, Borghi, Mauro, Lodi, Alessandro, Grasser, Tibor, Pasquali, Luca:
  "Thin epitaxial ionic fluoride films for electronics applications";
  Surfaces, 8(2) (2025-06-01) doi:10.3390/surfaces8020022.
  
  
• [PJ-36] Jørstad, Nils, P., Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor:
  "Modeling torques in systems with spin-orbit coupling";
  IEEE Transactions on Magnetics, 61(6) (2025-06-01) doi:10.1109/TMAG.2025.3525810.
  
  
• [PJ-35] Sattari-Esfahlan, Seyed, M., Yang, Allen, J., Ghosh, Rittik, Zheng, Wenwen, Rzepa, Gerhard, Knobloch, Theresia, Lanza, Mario, Renshaw, W., Xiao, Grasser, Tibor:
  "Stability and Reliability of van der Waals High-κ SrTiO3 Field-Effect Transistors with Small Hysteresis";
  ACS Nano, 19(12), 12288–12297 (2025-04-01) doi:10.1021/acsnano.5c01145.
  
  
• [PJ-34] Fuchsberger, A., Verdianu, A., Wind, L., Nazzari, D., Prado, N., Enrique, Wilfingseder, C, Aberl, J., Brehm, M., Hartmann, J-M., Sistani, M., Weber, W., M.:
  "Electrostatic gating in Ge-based reconfigurable field-effect transistors";
  IEEE Transactions on Electron Devices, 72(4), 1631–1636 (2025-04-01) doi:10.1109/TED.2025.3545802.
  
  
• [PJ-33] Akhound, Mohammad, A., Soleimani, Maryam, Pourfath, Mahdi:
  "Tunable N₂ fixation enabled by ferroelectric switching in doped graphene/In₂Se₃ dual-atom catalysts";
  ACS APPLIED MATERIALS & INTERFACES, 17(10), 15385–15397 (2025-03-12) doi:10.1021/acsami.4c21092.
  
  
• [PJ-32] Saleh, A.S., Croes, K., Ceric, Hajdin, De, W., I., Zahedmanesh, H.:
  "Novel concept-oriented synthetic data approach for training generative AI-Driven crystal grain analysis using diffusion model";
  Computational Materials Science, 251 (2025-03-01) doi:10.1016/j.commatsci.2025.113723.
  
  
• [PJ-31] Hamidi, Hoda, Shojaei, Fazel, Eslami, Hossein, Aliabadi, Rasol, Pourfath, Mahdi, Vaez-Zadeh, Mehdi:
  "Computational Analyses of Peganum harmala Alkaloids as Green Corrosion Inhibitors on Fe(110)";
  Langmuir, 41(5), 3249–3258 (2025-02-11) doi:10.1021/acs.langmuir.4c04039.
  
  
• [PJ-30] Lashani, Z., Ali, Kookhaee, Maryam, Soleimani, Maryam, Shobeyrian, Forough, Niksirat, Amin, Sanaee, Zeinab, Pourfath, Mahdi:
  "First-Principles Calculation of Lithium and Sodium Ion Diffusion in Crystalline Silicon Suboxide for Next-Generation Battery Anodes";
  JOURNAL OF PHYSICAL CHEMISTRY C, 129(5), 2341–2353 (2025-02-06) doi:10.1021/acs.jpcc.4c07141.
  
  
• [PJ-29] Cerdeira, Antonio, Estrada, Magali, Mounir, Ahmed, Grasser, Tibor, Iniguez, Benjamin:
  "Analysis of the mobility behavior of MOS₂ 2D FETs";
  Solid-State Electronics, 224, 1–7 (2025-02-01) doi:10.1016/j.sse.2024.109032.
  
  
• [PJ-28] Borghi, Mauro, Giovanelli, Giulia, Montecchi, Monica, Capelli, Raffaella, Mescola, Andrea, Paolicelli, Guido, D’Addato, Sergio, Grasser, Tibor, Pasquali, Luca:
  "Comprehensive study of SrF₂ growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy";
  Applied Surface Science, 680, 1–9 (2025-01-30) doi:10.1016/j.apsusc.2024.161310.
  
  
• [PJ-27] Speckmann, Carsten, Angeletti, Andrea, Kývala, Lukáš, Lamprecht, David, Herterich, Felix, Mangler, Clemens, Filipovic, Lado, Dellago, Christoph, Franchini, Cesare, Kotakoski, Jani:
  "Electron‐Beam‐Induced Adatom‐Vacancy‐Complexes in Mono‐ and Bilayer Phosphorene";
  Advanced Materials Interfaces, (2025-01-13) doi:10.1002/admi.202400784.
  
  
• [PJ-26] Bendra, Mario, Lacerda, d. O., Roberto, Selberherr, Siegfried, Wolfgang, G., Sverdlov, Viktor:
  "A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping";
  Solid-State Electronics, 223 (2025-01-01) doi:10.1016/j.sse.2024.109027.
  
  
• [PJ-25] Lamprecht, David, Benzer, Anna, Längle, Manuel, Capin, Mate, Mangler, Clemens, Susi, Toma, Filipovic, Lado, Kotakoski, Jani:
  "Uncovering the Atomic Structure of Substitutional Platinum Dopants in MoS₂ with Single-Sideband Ptychography";
  Nano Letters, 25(22), 8931–8938 (2025-01-01) doi:10.1021/acs.nanolett.5c00919.
  
  
• [PJ-24] Hu, Ziyi, Li, Junjie, Chen, Rui, Shang, Dashan, Wei, Yayi, Wang, Zhongrui, Li, Ling, Filipovic, Lado:
  "A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing";
  Small, 20(51) (2024-12-19) doi:10.1002/smll.202405574.
  
  
• [PJ-23] Faber, T, Filipovic, L, Koster, L, J. A.:
  "The Hot Phonon Bottleneck Effect in Metal Halide Perovskites";
  Journal of Physical Chemistry Letters, 15, 12601–12607 (2024-12-16) doi:10.1021/acs.jpclett.4c03133.
  
  
• [PJ-22] Ravichandran, Harikrishnan, Knobloch, Theresia, Subbulakshmi, R., Shiva, Wilhelmer, Christoph, Stepanoff, Sergei, Stampfer, Bernhard, Ghosh, Subir, Oberoi, Aaryan, Waldhoer, Dominic, Chen, Chen, Redwing, Joan, M., Wolfe, Douglas, E., Grasser, Tibor, Das, Saptarshi:
  "A stochastic encoder using point defects in two-dimensional materials";
  Nature Communications, 15(1), 1–11 (2024-12-04) doi:10.1038/s41467-024-54283-1.
  
  
• [PJ-21] Cvitkovich, Lukas, Stano, Peter, Wilhelmer, Christoph, Waldhör, Dominic, Loss, Daniel, Niquet, Yann, M., Grasser, Tibor:
  "Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits";
  Physical Review Applied, 22(6) (2024-12-01) doi:10.1103/PhysRevApplied.22.064089.
  
  
• [PJ-20] Franckel, Mathilde, L., Turiansky, Mark, E., Waldhör, Dominic, Van, D. W., Chris, G.:
  "First-principles study of proton migration in indium oxide";
  Physical Review B, 110(22), 1–6 (2024-12-01) doi:10.1103/PhysRevB.110.L220101.
  
  
• [PJ-19] Shao, Hua, Reiter, Tobias, Chen, Rui, Li, Junjie, Hu, Ziyi, Wei, Yayi, Li, Ling, Filipovic, Lado:
  "Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors";
  ACS Applied Electronic Materials, 6(11), 8124–8133 (2024-11-26) doi:10.1021/acsaelm.4c01462.
  
  
• [PJ-18] Saleh, Ahmed, S., Croes, Kristof, Ceric, Hajdin, De, W., Ingrid, Zahedmanesh, Houman:
  "A Comprehensive Microstructure-Aware Electromigration Modeling Framework; Investigation of the Impact of Trench Dimensions in Damascene Copper Interconnects";
  Nanomaterials, 14(22) (2024-11-16) doi:10.3390/nano14221834.
  
  
• [PJ-17] Stephanie, Margareta, V., Pham, Lam, Schindler, Alexander, Grasser, Tibor, Waltl, Michael, Schrenk, Bernhard:
  "Photonic Neuron With on Frequency-Domain ReLU Activation Function";
  Journal of Lightwave Technology, 42(22), 7919–7928 (2024-11-15) doi:10.1109/JLT.2024.3413976.
  
  
• [PJ-16] Propst, Diana, Joudi, Wael, Längle, Manuel, Madsen, Jacob, Kofler, Clara, Mayer, Barbara, Lamprecht, David, Mangler, Clemens, Filipovic, Lado, Susi, Toma, Kotakoski, Jani:
  "Automated image acquisition and analysis of graphene and hexagonal boron nitride from pristine to highly defective and amorphous structures";
  Scientific Reports, 14(1) (2024-11-06) doi:10.1038/s41598-024-77740-9.
  
  
• [PJ-15] Patoary, Naim, H., Mamun, Fahad, A., Xie, Jing, Grasser, Tibor, Sanchez, E., Ivan:
  "Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETs";
  Advanced Electronic Materials, 10(11) (2024-11-01) doi:10.1002/aelm.202400152.
  
  
• [PJ-14] Patoary, Naim, H., Mamun, Fahad, A., Xie, Jing, Grasser, Tibor, Sanchez, E., Ivan:
  "Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETs";
  Advanced Electronic Materials, 10(11) (2024-11-01) doi:10.1002/aelm.202400152.
  
  
• [PJ-13] Cvitkovich, Lukas, Fehringer, Franz, Wilhelmer, Christoph, Milardovich, Diego, Waldhör, Dominic, Grasser, Tibor:
  "Machine learning force field for thermal oxidation of silicon";
  Journal of Chemical Physics, 161(14) (2024-10-14) doi:10.1063/5.0220091.
  
  
• [PJ-12] Shen, Yaqing, Zhu, Kaichen, Xiao, Yiping, Waldhör, Dominic, Basher, Y., Abdulrahman, H., Knobloch, Theresia, Pazos, Sebastian, Liang, Xianhu, Zheng, Wenwen, Yuan, Yue, Roldan, Juan, B., Schwingenschlögl, Udo, Tian, He, Wu, Huaqiang, Schranghamer, Thomas, F., Trainor, Nicholas, Redwing, Joan, M., Das, Saptarshi, Grasser, Tibor, Lanza, Mario:
  "Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy";
  Nature Electronics, 7(10), 856–867 (2024-10-01) doi:10.1038/s41928-024-01233-w.
  
  
• [PJ-11] Pruckner, Bernhard, Fiorentini, Simone, Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor:
  "Micromagnetic modeling of double spin-torque magnetic tunnel junction devices";
  PHYSICA B-CONDENSED MATTER, 688 (2024-09-01) doi:10.1016/j.physb.2024.416124.
  
  
• [PJ-10] Pruckner, Bernhard, Fiorentini, Simone, Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor:
  "Micromagnetic modeling of double spin-torque magnetic tunnel junction devices";
  PHYSICA B-CONDENSED MATTER, 688 (2024-09-01) doi:10.1016/j.physb.2024.416124.
  
  
• [PJ-9] Feil, Maximilian, W., Weger, M., Reisinger, Hans, Aichinger, Thomas, Kabakow, André, Waldhör, Dominic, Jakowetz, Andreas, C., Prigann, Sven, Pobegen, Gregor, Gustin, Wolfgang, Waltl, Michael, Bockstedte, Michel, Grasser, Tibor:
  "Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs";
  Physical Review Applied, 22(2) (2024-08-30) doi:10.1103/PhysRevApplied.22.024075.
  
  
• [PJ-8] Smith, N., Berens, J., Pobegen, G., Grasser, Tibor, Shluger, A.:
  "Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors";
  Journal of Applied Physics, 136(8), 1–9 (2024-08-28) doi:10.1063/5.0213528.
  
  
• [PJ-7] Soleimani, Maryam, Shojaei, Fazel, Pourfath, Mahdi:
  "Solar-Driven Water Splitting: Theoretical Insights into M₂Te₅ (M=Al, In) Monolayer Photocatalysts";
  International Journal of Hydrogen Energy, 79, 666–675 (2024-08-19) doi:10.1016/j.ijhydene.2024.06.345.
  
  
• [PJ-6] Sverdlov, Viktor, Selberherr, Siegfried:
  "Electron and Spin Transport in Semiconductor and Magnetoresistive Devices";
  Solid-State Electronics, 218 (2024-08-01) doi:10.1016/j.sse.2024.108962.
  
  
• [PJ-5] Panarella, Luca, Kaczer, Ben, Smets, Quentin, Tyaginov, Stanislav, Saraza-Canflanca, Pablo, Vici, Andrea, Verreck, Devin, Schram, Tom, Lin, Dennis, Knobloch, Theresia, Grasser, Tibor, Lockhart, d. l. R., César, Kar, Gouri, S., Afanas’ev, Valeri:
  "Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS₂ FETs";
  npj 2D Materials and Applications, 8(1), 1–9 (2024-07-14) doi:10.1038/s41699-024-00482-9.
  
  
• [PJ-4] Grasser, Tibor, Waltl, Michael, Knobloch, Theresia:
  "Fluoride dielectrics for 2D transistors";
  Nature Nanotechnology, 19(7), 880–881 (2024-07-08) doi:10.1038/s41565-024-01710-5.
  
  
• [PJ-3] Wilhelmer, Christoph, Waldhör, Dominic, Cvitkovich, Lukas, Milardovich, Diego, Waltl, Michael, Grasser, Tibor:
  "Polaron formation in the hydrogenated amorphous silicon nitride Si₃N₄ : H";
  Physical Review B, 110(4), 1–12 (2024-07-01) doi:10.1103/PhysRevB.110.045201.
  
  
• [PJ-2] Feil, Maximilian, Waschneck, Katja, Reisinger, Hans, Berens, Judith, Aichinger, Thomas, Prigann, Sven, Pobegen, Gregor, Salmen, Paul, Rescher, Gerald, Waldhör, Dominic, Vasilev, Alexander, Gustin, Wolfgang, Waltl, Michael, Grasser, Tibor:
  "Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental";
  IEEE Transactions on Electron Devices, 71(7), 4210–4217 (2024-07-01) doi:10.1109/TED.2024.3397636.
  
  
• [PJ-1] Grasser, Tibor, Feil, Maximilian, W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Waldhör, Dominic, Vasilev, Alexander, Waltl, Michael, Aichinger, Thomas, Bockstedte, Michel, Gustin, Wolfgang, Pobegen, Gregor:
  "Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling";
  IEEE Transactions on Electron Devices, 71(7), 4218–4226 (2024-07-01) doi:10.1109/TED.2024.3397629.
  
  

No publications of this type.

• [CP-10] Roy, C., Rajarshi, Rockermeier, Hubert, Stabentheiner, Manuel, Ruch, Bernhard, Waltl, Michael, Ostermeier, Clemens, Pogany, Dionyz:
  "Random telegraph noise and excess leakage current due to intrinsic defects in p-i-n diodes on GaN-on-Si substrate";
  Talk: In ICNS 15 : Malmö, Sweden 2025 : Abstract Booklet (pp. 554–554), Malmö, SE doi:10.34726/11240.
  
  
• [CP-9] Rasouli, Saeed, Diebold, Ulrike, Schmid, Michael, Grasser, Tibor, Nazzari, Daniele, Weber, Walter, M., Sokolović, Igor:
  "Growth Mechanisms of CaF₂ Thin Films on Cu Surfaces";
  Poster: In 16th European Conference on Surface Crystallography and Dynamics & 14th International Conference on the Structure of Surfaces : ECSCD-16/ICSOS-14 Wien, AT.
  
  
• [CP-8] Pruckner, Bernhard, Wolfgang, G., Selberherr, Siegfried, Sverdlov, Viktor:
  "Control of Spin Current Polarization Generated in Mn3Sn";
  Talk: In International Symposium on Hysteresis Modeling and Micromagnetics Torino, IT.
  
  
• [CP-7] Pruckner, Bernhard, Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor:
  "Switching of Magnetization in Strained Noncollinear Antiferromagnet Mn3Sn";
  Talk: In IWCN : International Workshop on Computational Nanotechnology : May 21-23, 2025 : Salt Lake City, UT : Book of Abstracts (pp. 33–34), Salt Lake City, UT, US.
  
  
• [CP-6] Lukic, Ognjen, Lacerda, d. O., Roberto, Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor:
  "Magnetic Field Accelerated Switching of an In-Plane MRAM Cell";
  Talk: In Mauterndorf 2025 : 23rd International Winterschool on New Developments in Solid State Physics : Abstract Book (pp. 158–159), Mauterndorf, AT.
  
  
• [CP-5] Pruckner, Bernhard, Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor:
  "Deterministic Switching of Noncollinear Antiferromagnets";
  Talk: In Mauterndorf 2025 : 23rd International Winterschool on New Developments in Solid State Physics : Abstract Book (pp. 164–165), Mauterndorf, AT.
  
  
• [CP-4] Jørstad, Nils, P., Pruckner, Bernhard, Goes, W., Selberherr, Siegfried, Sverdlov, Viktor:
  "Magnetic Field Free SOT-MRAM Switching";
  Talk: In 2024 Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Kamuela, Hi, US.
  
  
• [CP-3] Sverdlov, Viktor:
  "Modeling Advanced Magnetoresistive Devices";
  Talk: In Speakers SiNANO Summer School & IEEE MQ (pp. 1–1), Gießen, DE.
  
  
• [CP-2] Pruckner, Bernhard, Jørstad, Nils, P., Bendra, Mario, Hadamek, Tomas, Wolfgang, G., Selberherr, Siegfried, Sverdlov, Viktor:
  "Simulation of Advanced MRAM Devices for sub-ns Switching";
  Talk: In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) San Jose, US doi:10.1109/SISPAD62626.2024.10733317.
  
  
• [CP-1] Gentles, Angus, Dehghani, Mohammad, Minixhofer, Rainer, Khakbaz, Pedram, Waldhor, Dominic, Waltl, Michael:
  "Modeling Next Generation Sensor Chips: Towards Predictive Band Structure Models for Quarternary III-V Semiconductor Alloys";
  Talk: In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) unknown, US doi:10.1109/SISPAD62626.2024.10732909.
  
  

• [DT-6] Stephanie, Margareta, V.:
  "Design and evaluation of photonic neural network for hardware-accelerated artificial intelligence applications";
  Reviewer: ; , 2024-01-01, oral examination: doi:10.34726/hss.2024.124850.
  
  
• [DT-5] Waldhör, Dominic:
  "Multiscale modeling of defect-related reliability phenomena in nanoelectronics";
  Reviewer: ; , 2024-01-01, oral examination: doi:10.34726/hss.2024.126322.
  
  
• [DT-4] Wilhelmer, Christoph:
  "Impact of charge transitions at atomic defect sites on electronic device performance";
  Reviewer: ; , 2024-01-01, oral examination: doi:10.34726/hss.2024.126323.
  
  
• [DT-3] Feil, Maximilian, W.:
  "Radiative and non-radiative phenomena during gate-switching in silicon carbide power MOSFETs";
  Reviewer: ; , 2024-01-01, oral examination: doi:10.34726/hss.2024.124662.
  
  
• [DT-2] Cvitkovich, Lukas:
  "Atomistic modeling of Si spin qubits from first principles";
  Reviewer: ; , 2024-01-01, oral examination: doi:10.34726/hss.2024.123305.
  
  

• [MT-9] Bodingbauer, Jonas:
  "First-principles screening of fluoride-based compounds for gate dielectric applications";
  Reviewer: ; , 2025-01-01, oral examination: doi:10.34726/hss.2025.132589.
  
  
• [MT-8] Gruber, Florian:
  "Konzeptionierung und Entwicklung einer Hochspannungs Source-Measurement-Unit";
  Reviewer: ; , 2025-01-01, oral examination: doi:10.34726/hss.2025.123346.
  
  
• [MT-7] Strasser, Felix:
  "Numerical modeling of diffusion and FDTD wave propagation in semiconductor devices";
  Reviewer: ; , 2025-01-01, oral examination: doi:10.34726/hss.2025.135643.
  
  
• [MT-1] Fehringer, Franz:
  "Machine learning force field for dynamic oxidation of silicon";
  Reviewer: ; , 2024-01-01, oral examination: doi:10.34726/hss.2024.124880.
  
  

No publications of this type.