Actual Problems in the Field of Spintronics Journal Article
In: Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018, vol. 40, 2018, (Invited Paper).
Electron Spin for Modern and Future Microelectronics Proceedings Article
In: Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018, pp. 7, 2018, ISBN: 978-5-317-05917-0, (invited; talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2018-10-01 -- 2018-10-05).
Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Đevices (SISPAD), pp. 186–189, 2018, ISBN: 978-1-5386-6788-0, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 -- 2018-09-26).
Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor Proceedings Article
In: Proceedings of SPIE Spintronics, pp. 10732-112, 2018, (invited; talk: SPIE Spintronics, San Điego, CA, USA; 2018-08-19 -- 2018-08-23).
Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor Journal Article
In: Proceedings of SPIE, vol. 10732, pp. 1073235-1–1073235-8, 2018, (invited).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field Journal Article
In: Journal on Systemics, Cybernetics and Informatics, vol. 16, no. 2, pp. 55–59, 2018, (invited).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field Proceedings Article
In: Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), pp. 30–32, 2018, ISBN: 978-1-941763-81-0, (talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2018-07-08 -- 2018-07-11).
Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field Proceedings Article
In: Abstracts Advanced Research Workshop Future Ŧrends in Microelectronics: Vingt Ans Après, pp. 51, 2018, (poster presentation: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 -- 2018-06-16).
Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch Proceedings Article
In: Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après, pp. 49, 2018, (poster presentation: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 -- 2018-06-16).
Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells Proceedings Article
In: Proceedings of the 233rd ECS Meeting (ECS), 85/213, 2018, ISSN: 2151-2043, (talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 2018-05-13 -- 2018-05-17).
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices Journal Article
In: Solid-State Electronics, vol. 199, pp. 108491-1 – 108491-4, 0202.