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6.2.3 RF Characteristics

Although the recess geometry has an impact on the RF performance of the device the most important device parameters for this property are the gate length LG, the passivation thickness, and the shape of the T­gate. This will be investigated in the following by means of simulation and measurements of two power HEMTs with LG = 220 nm and LG = 500 nm.
 



next up previous contents
Next: 6.2.3.1 Reduction of the Gate length Up: 6.2 Power HEMT for 0.9/1.9 GHz and 40 GHz Applications Previous: 6.2.2 Dependence of Recess Geometry on the E-Field Distribution

Helmut Brech
1998-03-11