6.2.3 RF Characteristics
Although the recess geometry has an impact on the RF performance of
the device the most important device parameters for this property are the
gate length LG, the passivation thickness, and the shape
of the Tgate. This will be investigated in the following by means
of simulation and measurements of two power HEMTs with LG
= 220 nm and LG = 500 nm.
Helmut Brech 1998-03-11