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I. Aberg, O.O. Olubuyide, C.N. Chleirigh, I. Lauer, D.A. Antoniadis, J. Li, R. Hull, and J.L. Hoyt.
Electron and Hole Mobility Enhancements in sub-10 nm-thick Strained Silicon Directly on Insulator Fabricated by a Bond and Etch-Back Technique.
VLSI Symp. Tech.Dig., pages 52-53, 2004.

G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, and H.J. Herzog.
Strain Induced Two-Dimensional Electron Gas in Selectively Doped Si/SiGe Superlattices.
Phys.Rev.Letters, vol. 54, no. 22, pages 2441-2444, 1985.

K.-W. Ang, K.-J. Chui, V. Bliznetsov, C.-H. Tung, A. Du, N. Balasubramanian, G. Samudra, M.F Li, and Y.-C. Yeo.
Lattice Strain Analysis of Transistor Structures with Silicon-Germanium and Silicon-Carbon Source/Drain Stressors.
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N.D. Arora, J.R. Hauser, and D.J. Roulston.
Electron and Hole Mobilities in Silicon as a Function of Concentration and Temperature.
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I. Balslev.
Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium.
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J.C. Bean.
Silicon Molecular Beam Epitaxy: 1984-1986.
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G. L. Bir, and G. E. Pikus.
``Symmetry and Strain Induced Effects in Semiconductors,''.
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L. P. Bouckaert, R. Smoluchowski, and E. Wigner.
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M. Brillouët.
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F.M. Bufler, P. Graf, S. Keith, and B. Meinerzhagen.
Full-Band Monte Carlo Investigation of Electron Transport in Strained Si Grown on Si$ _{1-x}$Ge$ _x$ Substrates.
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C. Canali, G. Ottaviani, and A. Alberigi-Quaranta.
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M. Cardona, and F.H. Pollak.
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D.M. Caughey, and R.E. Thomas.
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J. Cervenka.
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V. Chan, Ken Rim, Meikei Ieong, Sam Yang, Rajeev Malik, Young Way Teh, Min Yang, and Q. Ouyang.
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R.C. Chaney, C.C. Lin, and E.E. Lafon.
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Phys.Rev.B, vol. 3, no. 2, pages 459-472, 1971.

R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz.
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J.R. Chelikowsky, and M.L. Cohen.
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Chien-Hao Chen, T. L. Lee, T. H. Hou, C. L. Chen, C. C. Chen, J. W. Hsu, K. L. Cheng, Y. H. Chiu, H. J. Tao, Y. Jin, C. H. Diaz, S. C. Chen, and M. S. Liang.
Stress Memorization Technique (SMT) by Selectively Strained-Nitride Capping for sub-65nm High-Performance Strained-Si Device Application.
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D. Colman, R.T. Bate, and J.P. Mize.
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E.M. Conwell.
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M.-T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, and E.A. Fitzgerald.
Controlling Threading Dislocation Densities in Ge on Si Using Graded SiGe Layers and Chemical-Mechanical Polishing.
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M.-T. Currie, C. W. Leitz, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis.
Carrier Mobilities and Process Stability of Strained Si n- and p-MOSFETs on SiGe Virtual Substrates.
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M.-T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, and E.A. Fitzgerald.
SiGe-Free Strained Si on Insulator by Wafer Bonding and Layer Transfer.
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M.N. Darwish, J.L. Lentz, M.R. Pinto, P.M. Zeitzoff, T.J. Krutsick, and H.H. Vuong.
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J.H. Davies.
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S. Dhar, G. Karlowatz, E. Ungersboeck, and H. Kosina.
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S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr.
Electron Mobility Model for Strained-Si Devices.
IEEE Trans.Electron Devices, vol. 52, no. 4, pages 527-533, 2005.

S. Dhar, H. Kosina, G. Karlowatz, E. Ungersboeck, T. Grasser, and S. Selberherr.
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G. Dresselhaus, A. F. Kip, and C. Kittel.
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J. Egley, and D. Chidambarao.
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X.F. Fan, X. Wang, B. Winstead, L.F. Register, U. Ravaioli, and S.K. Banerjee.
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B. Fischer, and K. Hofmann.
Full-Band Monte Carlo Model for Electron and Hole Transport in Strained Si Including Inelastic Acoustic Phonon Scattering.
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M.V. Fischetti, and S.E. Laux.
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M.V. Fischetti, F. Gamiz, and W. Haensch.
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E.A. Fitzgerald, Y.H. Xie, M.L. Green, D. Brasen, and A.R. Kortan.
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P. Friedel, M. S. Hybertsen, and M. Schlueter.
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Phys.Rev.B, vol. 39, no. 11, pages 7974-7977, 1989.

C. Gallon, G. Reimbold, G. Ghibaudo, R.A. Bianchi, and R. Gwoziecki.
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F. Gamiz et al.
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W. Haensch., E. J. Nowak, R. H. Dennard, P. M. Solomon, A. Bryant, O. H. Dokumaci, A. Kumar, X. Wang, J. B. Johnson, and M. V. Fischetti.
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W. Hänsch.
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J.C. Hensel, H. Hasegawa, and M. Nakayama.
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C. Herring, and E. Vogt.
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J.M. Hinckley, and J. Singh.
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R. Hook.
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L.-J. Huang, J. Chu, S. Goma, C. Emic, S. Koester, D. Canaperi, P. Mooney, S. Cordes, J. Speidell, R. Anderson, and H. Wong.
Carrier Mobility Enhancement in Strained Si-on-Insulator Fabricated by Wafer Bonding.
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K. Ismail, B.S. Meyerson, and P.J. Wang.
Extremely high electron mobility in Si/SiGe structures grown by molecular beam epitaxy.
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K. Ismail, B.S. Meyerson, and P.J. Wang.
High Electron Mobility in Modulation Doped Si/SiGe.
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K. Ismail, S. Nelson, J. Chu, and B. Meyerson.
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D. M. Issacson, G. Taraschi, A. J. Pitera, N. Ariel, T. A. Langdo, and E.A. Fitzgerald.
Strained Si on Si and Strained Si on SiGe on Si by Relaxed Buffer Bonding.
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S. Ito, H. Namba, K. Yamaguchi, T. Hirata, K. Ando, S. Koyama, S. Kuroki, N. Ikezawa, T. Suzuki, T. Saitoh, and T. Hotiuchi.
Mechanical Stress Effect of Etch-Stop Nitride and its Impact on Deep Submicron Transistor Design.
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MINIMOS-NT 2.1 User's Guide.
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VMC 2.0 User's Guide.
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C. Jacoboni, and L. Reggiani.
The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Applications to Covalent Materials.
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K. A. Jenkins, and K. Rim.
Measurement of the Effect of Self Heating in Strained Si MOSFETs.
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C. Jungemann, C.D. Nguyen, B. Neinhus, S. Decker, and B. Meinerzhagen.
Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs.
Proc. Intl. Conf. Modeling and Simulation of Microsystems, 2001.

C. Jungemann, and B. Meinerzhagen.
``Hierarchical Device Simulation - The Monte Carlo Perspective,''.
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C. Jungemann, and B. Meinerzhagen.
MC Simulation of Strained Si/SiGe Devices.
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Y. Kanda.
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E. Kasper, H.J. Herzog, and H. Kibbel.
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P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C.S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker et al.
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DBM Klaassen.
Unified Mobility Model for Device Simulation. I. Model Equations and Concentration Dependence.
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H. Kosina, and G. Kaiblinger-Grujin.
Ionized-Impurity Scattering of Majority Electrons in Silicon.
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T. Kurosawa.
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L.D. Laude, F.H. Pollak, and M. Cardona.
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K. Lee, J.S. Choi, S.P. Sim, and C. K. Kim.
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F.K. LeGoues, K. Eberl, and S.S. Iyer.
Relaxation by the Modified Frank-Read Mechanism in Compositionally Uniform Thin Films.
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M. Levinstein, S. Rumyantsev, and M. Shur.
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J.S. Lim, S.E. Thompson, and J.G. Fossum.
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C. W. Liu, S. Maikap, and C. Y. Yu.
Mobility Enhancement Technologies.
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A. Lochtefeld, and D. Antoniadis.
Investigating the Relationship Between Electron Mobility and Velocity in Deeply Scaled NMOS via Mechanical Stress.
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C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi.
A Physically Based Mobility Model for Numerical Simulation of Nonplanar Devices.
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T. Low, M. F. Li, C. Shen, Y. C. Yeo, Y. T. Hou, C. Zhu, A. Chin, and D. L. Kwong.
Electron Mobility in Ge and Strained-Si Channel Ultrathin-Body Metal-Oxide Semi Conductor Field-Effect Transistors.
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M.S. Lundstrom.
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S. Maikap, M.H. Liao, F. Yuan, M.H. Lee, C.F. Huang, S.T. Chang, and C.W. Liu.
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S. Maikap, C.Y. Yu, S.R. Jan, M.H. Lee, and C.W. Liu.
Mechanically Strained Si NMOSFETs.
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P. Majhi, H. C. Wen, H. Alshareef, H. R. Harris, H. Luan, K. Choi, C. S. Park, S.C. Song, B. H. Lee, and R. Jammy.
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T. Manku, and A. Nathan.
Electon Drift Mobility Model for Devices Based on Unstrained and Coherently Strained Si$ _{1-x}$Ge$ _x$ Grown on (001) Silicon Substrates.
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T. Manku, and A. Nathan.
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T. Manku, and A. Nathan.
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R. Marchetti, F. Montalenti, L. Miglio, G. Capellini, M. De Seta, and F. Evangelisti.
Strain-Induced Ordering of Small Ge Islands in Clusters at the Surface of Multilayered Si-Ge Nanostructures.
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G. Masetti, M. Severi, and S. Solmi.
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D.K. Nayak, J.C.S. Woo, J.S. Park, K.L. Wang, and K.P. MacWilliams.
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S. Pidin, T. Mori, K. Inoue, K. Fukata, N. Itoh, E. Mutoh, K.Ohkoshi, R. Nakamura, K. Kobayashi, K. Kawamura, T. Saiki, S. Fukayama, S. Satoh, M. Kase, and K. Hashimoto.
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D. Rairigh.
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M. Rashed et al.
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S. Reggiani, M. Valdinoci, L. Colalongo, and G. Baccarani.
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M.M. Rieger, and P. Vogl.
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K. Rim, J. Chu, H. Chen, K. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, and H. Wong.
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K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, M. Steen, and M. Ieong.
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J.B. Roldan.
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S. Dhar: Analytical Mobility Modeling for Strained Silicon-Based Devices