Bibliography

ATM+98

K. Amanuma, T. Tatsumi, Y. Maejima, S. Takahashi, H. Hada, H. Okizaki, and T. Kunio.
Capacitor-on-Metal/Via-stacked- Plug (CMVP) Memory Cell for 0.25 $\mathrm{\mu m}$ CMOS Embedded FeRAM.
Proc.Intl.Electron Devices Meeting, pages 363-366, 1998.

Bau99

L. Baudry.
Theoretical Investigation of the Influence of Space charges on Ferroelectric Properties of $\mathrm{PbZrTiO}_3$ Thin Film Capacitor.
J.Appl.Phys., 86(2):1096-1105, July 1999.

BDG+98

T. Binder, K. Dragosits, T. Grasser, R. Klima, M. Knaipp, H. Kosina, R. Mlekus, V. Palankovski, M. Rottinger, G. Schrom, S. Selberherr, and M. Stockinger.
MINIMOS-NT User's Guide.
Institut für Mikroelektronik, 1998.

BEL97

H.G. Brachtendorf, Ch. Eck, and R. Laur.
Macromodeling of Hysteresis Phenomena with SPICE.
IEEE Trans.Circuits and Systems-II: Analog and Digital Signal Processing, 44(5):378-388, May 1997.

BSHE83

J.A. Barker, D.E. Schreiber, B.G. Huth, and D.H. Everest.
Magnetic Hysteresis and Minor Loops: Models and Experiments.
In Proceedings of the Royal Society of London, volume A 386, pages 251-261, 1983.

CCR+99

B. Cheng, M. Cao, R. Rao, A. Inani, P. Vande Voorde, W.M. Greene, J.M.C. Stork, Z. Yu, P.M. Zeitzoff, and J.C.S. Woo.
The Impact of High-k Gate Dielectrics and Metal Gate Electrodes on Sub-100nm MOSFET's.
IEEE Trans.Electron Devices, 46(7):1537-1544, July 1999.

CCV+99

B. Cheng, M. Cao, P. Vande Voorde, W.M. Greene, J.M.C. Stork, Z. Yu, and J.C.S. Woo.
Design Considerations of High-k Gate Dielectrics for Sub-0.1$\mu$m MOSFET's.
IEEE Trans.Electron Devices, 46(1):261-262, January 1999.

CPW97

J.F.M. Cillessen, M.W.J. Prins, and R.M. Wolf.
Thickness Dependence of Switching Voltage in All-oxide Ferroelectric Thin-Film Capacitors Prepared by Pulsed Laser Deposition.
J.Appl.Phys., 81(6):2777-2783, March 1997.

DBL98

Guido W. Dietz, G. Braun, and O. Lohse.
An Accurate Compact Model for Integrated Ferroelectric Capacitors.
In Siemens HL SIM confidential, 1998.

Die97

G.W. Dietz.
$\mathrm{SrTiO_3}$-Dünnschichten unter dem Einfluss elektrischer Gleichfelder, volume 215 of Fortschrittberichte VDI Reihe 21.
VDI-Verlag, Düsseldorf, 1997.

Dir86

H.J. Dirschmid.
Mathematische Grundlagen der Elektrotechnik.
Vieweg, 1986.

Dun94

D.E. Dunn.
A Ferroelectric Capacitor Macromodel and Parametrization Algorithm for Spice Simulation.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 41(3):360-369, May 1994.

EW88

J.T. Evans and R. Womack.
An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell.
IEEE J.Solid-State Circuits, 23:1171-1175, 1988.

Fas87

G. Fasching.
Werkstoffe für die Elektrotechnik.
Springer, Wien, 1987.
2. Auflage.

Fis94

C. Fischer.
Bauelementsimulation in einer computergestützten Entwurfsumgebung.
Dissertation, Technische Universität Wien, 1994.
http://www.iue.tuwien.ac.at/diss/fischer/diss-new/diss.html.

GLB+98

M. Grossmann, O. Lohse, D. Bolten, R. Waser, W. Hartner, G. Schindler, C. Dehm, N. Nagel, V. Joshi, N. Solayappan, and G. Derbenwick.
Imprint in Ferroelectric SrBi$_2$Ta$_2$O$_9$ Capacitors for Non-volatile Memory Applications.
In Proceedings ISIF10, Monterey, March 1998.

IRCW99

A. Inani, Ramgopal V. Rao, B. Cheng, and J. Woo.
Gate Stack Architecture Analysis and Channel Engineering in Depp Sub-Micron MOSFETs.
J.Appl.Phys., 38(4B):2266-2271, April 1999.

Ish92

Y. Ishibashi.
Hysteresis Loops in Ferroelectris Undergoing an Isomorphpous Phase Transition.
Japanese Journal of Applied Physics, 31(2A):327-328, February 1992.

JA86

D.C. Jiles and D.L. Atherton.
Theory of Ferromagnetic Hysteresis.
Journal of Magnetism and Magnetic Materials, 61:48-60, 1986.

JCJ+97

R.E. Jones Jr., P.Y. Chu, B. Jiang, B.M. Melnick, D.J. Taylor, B.E. White Jr., S. Zafr, D. Price, P. Zurcher, S.J. Gillespie, T. Otsuki, T. Sumi, Y. Judai, Y. Uemoto, E. Fujii, S. Hayashi, N. Moriwaki, M. Azuma, Y. Shimada, K. Arita, H. Hirano, J. Nakane, T. Nakanum, and G. Kano.
Non Volatile Memories Using $\mathrm{SrBi_2Ta_2O_9}$ Ferroelectrics.
Integrated Ferroelectrics, 17:21-30, 1997.

JZJ+97

B. Jiang, P. Zurcher, R.E. Jones, S.J. Gillespie, and J.C. Lee.
Computationally Efficient Ferroelectric Capacitor Model for Circuit Simulation.
In IEEE Symposium on VLSI Technology Digest of Technical Papers, pages 141-142, 1997.

Kit86

Ch. Kittel.
Introduction to Solid State Physics.
Wiley, New York, sixth edition, 1986.

KTM+97

S. Kobayashi, N. Tanabe, Y. Maehima, Y. Hayashi, and T. Kunio.
Scaling Possibility of PZT Capacitors for High Density and Low-Voltage NVFRAM Application.
Integrated Ferroelectrics, 17:81-88, 1997.

KYY+98

S. Krishnan, G.C.-F Yeap, B. Yu, Q. Xiang, and M. Lin.
High-k Scaling of Gate Insulators: an Insightful study.
In Proc. Conf. on Microelectronic Device Technology, volume 3506, pages 65-72. SPIE, September 1998.

LDTvV94

P.K. Larsen, G.J.M. Dormans, D.J. Taylor, and P.J. van Veldhoven.
Ferroelectric Properties and Fatigue of $\mathrm{PbZr_{0.51}Ti_{0.49}O_3}$ Thin Films of Varying Thickness: Blocking Layer Model.
J.Appl.Phys., 76(4):2405-2413, August 1994.

LG96

M.E. Lines and A.M. Glass.
Principles and Applications of Ferroelectrics and Related Materials.
Oxford University Press, 1996.

LWK+98

H.F. Luan, B.Z. Wu, L.G. Kang, B.Y. Kim, R. Vrtis, D. Roberts, and D.L. Kwong.
Ultra High Quality $\mathrm{Ta_2O_5}$ Gate Dielectric Prepared by In-situ Rapid Thermal Processing.
In Proc.Intl.Electron Devices Meeting, pages 609-612, 1998.

Max91

J.C. Maxwell.
A Treatise on Electricity and Magnetism.
Dover, New York, 1991.
3.Edition.

Maz00

C. Mazure.
FeRAM Technology.
29th European Solid-State Device Research Conference, pages 64-67, 2000.

MF53

T. Mitsui and J. Furuichi.
Domain Structure of Rochelle Salt and $\mathrm{KH_2PO_4}$.
Physical Review, 90(2):193-203, 1953.

MM92

S. L. Miller and P. J. McWhorter.
Physics of the Ferroelectric Nonvolatile Memory Field Effect Transistor.
J.Appl.Phys., 72(12):5999-6010, 1992.

MNS+90

S.L. Miller, R.D. Nasby, J.R. Schwank, M.S. Rodgers, and P.V. Dressendorfer.
Device Modeling of Ferroelectric Capacitors.
J.Appl.Phys., 68(12):6463-6471, 1990.

MOS+99

Y. Ma, Y. Ono, L. Stecker, D.R. Evans, , and S.T. Hsu.
Zirconium Oxide Based Gate Dielctrics with Equivalent Oxide Thickness of Less than 1.0nm and Performance of Submicron MOSFET Using a Nitride Gate Replacement Process.
In Proc.Intl.Electron Devices Meeting, pages 149-152, 1999.

MWC99

R. McKee, F. Walker, and M. Chisholm.
Crystalline oxides on silicon-alternative dielectrics for advanced transistor technologies.
In Ultrathin $\mathrm{SiO_2}$ and High-K Materials for ULSI Gate Dielectrics. Symposium, volume 17, pages 415-425, 1999.

Nag75

L.W. Nagel.
SPICE2: A Computer Program to Simulate Semiconductor Circuits.
Technical Report UCB/ERL M520, University of California, Berkeley, 1975.

OAI91

M. Omura, H. Adachi, and Y. Ishibashi.
Simulation of Ferroelectric Characteristics Using a One-Dimensional Lattice Model.
Japanese Journal of Applied Physics, 30(9B):2384-2387, September 1991.

OAI92

M. Omura, H. Adachi, and Y. Ishibashi.
Simulation of Polarization Reversals by a Two-Dimensional Lattice Model.
Japanese Journal of Applied Physics, 31(9B):3238-3240, September 1992.

PBOZ97

P. Pavan, R. Bez, P. Olivo, and E. Zanoni.
Flash Memory Cells - An Overview.
Proc.IEEE, 85(8):1248-1271, August 1997.

Pfü94

H. Pfützner.
Rotational Magnetization and Rotational Losses of Grain Oriented Silicon Steel Sheets-Fundamental Aspects and Theory.
IEEE Trans.Magnetics, 30(5):2802-2807, 1994.

Pre35

F. Preisach.
Über die magnetische Nachwirkung.
Zeitschrift für Physik, 94:277-302, 1935.

RW95

K.M. Rabe and U.V. Waghmare.
Localized Basis for Effective Lattice Hamiltionians: Lattice Wannier Functions.
Physical Review B, 52(18):13236-13246, November 1995.

Sch97

H.R. Schwarz.
Numerische Mathematik.
Teubner, Stuttgart, 1997.
4. Auflage.

Sco95

J.F. Scott.
Models for the Frequency Dependence of Coercive Field and the Size Dependence of Remanent Polarization in Ferroelectric Thin Films.
Integrated Ferroelectrics, 12:71-81, 1995.

Sem99

Semiconductor Industry Association.
The National Technology Roadmap for Semiconductors, 1999.

SG00

A. Sheikholeslami and G. Gulak.
A Survey of Circuit Innovations in Ferroelectric Random-Access Memories.
Proceedings of the IEEE, 88(5):667-689, May 2000.

SMN+95

T. Sumi, N. Moriwaki, G. Nakane, T. Nakakuma, Y. Judai, Y. Uemoto, Y. Nagano, S. Hayshi, M. Azuma, T. Otsuki, G. Kano, J.D. Cuchiaro, M.C. Scott, L.D. McMillan, and C.A. Paz de Araujo.
A Model of Voltage Dependent Dielectic Losses for Ferroelectric MMIC Devices.
Integrated Ferroelectrics, 6:1-13, 1995.

TAH+97

M. Takeo, M. Azuma, H. Hirano, K. Asari, N. Moriwaki, T. Otsuki, and K. Tatsuuma.
SrBi$_2$Ta$_2$O$_9$ Thin Film Capacitor Model Including Polarization Reversal Response for Nanosecond Range Circuit Simulation of Ferroelectric Nonvolatile Memory.
In Proc.Intl.Electron Devices Meeting, pages 621-624, 1997.

UGH+99

M. Ullmann, H. Goebel, H. Hoenigschmid, T. Haneder, and G.W. Dietz.
An Accurate Compact Model for Ferroelectric Memory Field Effect Transistors.
In Simulation of Semiconductor Processes and Devices, pages 175-178, Kyoto, Japan, September 1999.

WP08

P. Weiss and V. Planer.
Hystérèse dans les Champs Tournants.
Journal de Physique (Théor. et Appl.), 4/7:5-27, 1908.

WR97

U.V. Waghmare and K.M. Rabe.
Ab Initio Statistical Mechanics of the Ferroelectric Phase Transition in $\mathrm{PbTiO_3}$.
Physical Review B, 55(10):6161-6173, March 1997.

YKL98

G.C.-F. Yeap, S. Krishnan, and M. Lin.
Fringing-induced Barrier Lovering (FIBL) in Sub-100nm MOSFETs with High-k Gate Dielectrics.
Electronics Letters, 34(11):1150-1152, May 1998.