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Acknowledgment
Contents
Kurzfassung
Abstract
Acknowledgment
Contents
List of Abbreviations
List of Symbols
List of Figures
List of Tables
1. Introduction
1.1 Simulation of Ferroelectric Materials
1.2 Outline of the Thesis
2. Ferroelectricity
2.1 Instabilities in Crystals with a Centrosymmetric Prototype
2.2 Structural Properties of Perovskites
2.2.1 Perfect Cubic Structure
2.2.2 Distorted Cubic Structure - Ferroelectricity
2.3 Microstructure
2.4 Domains
2.4.1 Analysis of Domain Configuration
3. Modeling of Hysteresis
3.1 Compact Modeling with Discrete Devices
3.2 Compact Modeling - Preisach Hysteresis
3.2.1 Turning Point
3.2.2 Depolarization
3.2.3 Subcycles
3.2.4 Memory Wipe Out
3.3 Lattice Models - Minimized Free Energy
3.3.1 Lattice Models
3.4 Discussion of the Models
4. Two-Dimensional Simulation
4.1 Shape Functions
4.1.1 The arctan Shape Function
4.1.2 The tanh Shape Function
4.1.3 Comparison between the Shape Functions
4.2 Two-Dimensional Algorithm
4.2.1 Two-Dimensional Properties
4.2.2 Single Crystals - Polycrystals
4.2.3 Polarization in an Orthogonal Direction
4.2.4 Algorithm for Anisotropic Materials
4.2.4.1 Uniaxial Materials
4.2.4.2 Biaxial Materials
4.2.5 Algorithm for Materials without any Favored Direction
4.2.6 Comparison of the Two-Dimensional Approaches
4.2.7 Simple, One-Dimensional Model
4.3 Comparison of the Two-Dimensional Model to Measurements
5. Frequency Dependent Simulation
5.1 Modeling
5.2 Discretization
5.3 Comparison to Measurement
5.4 Extraction of the Parameters
5.5 Analysis of Signal Response
5.5.1 Frequency and Amplitude Dependence of the Coercive Field
5.5.2 Pulse Shape and Amplitude
5.5.3 Switching of a Capacitor
5.6 Measurement of Frequency Dependence
6. Implementation
6.1 Preprocessing
6.1.1 User Interface
6.1.1.1 Control Parameters
6.1.1.2 Physical Input Quantities
6.1.1.3 Device Description
6.1.2 Calculations
6.2 Numerical Calculation
6.2.1 Discretization
6.2.2 Nonsymmetry of the Locus Curves - Sign Handling
6.2.3 Detection of the Locus Curves
6.2.4 Calculation - Data flow
6.3 Postprocessing
6.3.1 Memory Management
6.3.2 Data Flow of Postprocessing
7. Ferroelectric Non-volatile Memory Cells
7.1 The Transistor Capacitor Memory Cell
7.1.1 Double Cell Design
7.1.2 Single Cell Design
7.2 The Ferroelectric Memory Field Effect Transistor
7.2.1 Operating Principle
8. Simulation of Ferroelectric Devices
8.1 Extraction of Equivalent Parameters for a Finger Structure
8.2 Simulation of Thin Films
8.2.1 Simulation of Materials with Uniaxial Anisotropy
8.2.2 Simulation of Materials with Biaxial Anisotropy
8.3 Analysis of a Ferroelectric Memory Field Effect Transistor
8.3.1 Transfer Characteristics
8.3.2 Field and Charge Distribution
8.3.3 Discussion
9. Conclusion and Outlook
Bibliography
List of Publications
Curriculum Vitae
About this document ...
Klaus Dragosits
2001-02-27
