|
AFM |
atomic force microscope |
|
ALE |
atomic layer epitaxy |
|
BiCS |
bit cost scalable |
|
CM |
contact mode |
|
CMOS |
complementary metal oxide semiconductor |
|
CMP |
chemical mechanical planarization |
|
CPD |
cumulative probability distribution |
|
CVD |
chemical Vapor Deposition |
|
DC-SF |
dual control-gate with surrounding floating-gate |
|
DFT |
density functional theory |
|
DTG |
dynamic tubular grid |
|
ESD |
electrostatic spray deposition |
|
EUV |
extreme ultraviolet |
|
FDM |
finite difference method |
|
FEM |
finite element method |
|
FN |
Fowler-Nordheim |
|
FWHM |
full width at half maximum |
|
H-RLE |
hierarchical run length encoding |
|
HPCVD |
high pressure chemical vapor deposition |
|
HTO |
high temperature oxide |
|
IC |
integrated circuit |
|
ICM |
intermittent contact mode |
|
LAO |
local anodic oxidation |
|
LCD |
liquid crystal display |
|
LOCOS |
local oxidation of silicon |
|
LON |
local oxidation nanolithography |
|
LS |
Level Set |
|
MC |
Monte Carlo |
|
MOS |
metal oxide semiconductor |
|
NAOS |
nitric acid oxidation of silicon |
|
NCM |
non-contact mode |
|
PDF |
probability density function |
|
PECVD |
plasma enhanced chemical vapor deposition |
|
PSD |
pressurized spray deposition |
|
PVD |
physical vapor deposition |
|
RAH |
relative air humidity |
|
RF |
radio frequency |
|
RLE |
run length encoding |
|
RTA |
rapid thermal annealing |
|
SCD |
surface charge density |
|
SiNWT |
silicon nanowire transistor |
|
SOI |
silicon on insulator |
|
SPM |
scanning probe microscopy |
|
STI |
shallow trench isolation |
|
STM |
scanning tunneling microscope |
|
TCAD |
technology computer aided design |
|
TCAT |
terabit cell array transistor |
|
TEOS |
tetraethyl orthosilicate |
|
TFT |
thin film transistor |
|
TM |
tapping mode |
|
TMAH |
tetramethylammonium hydroxide |
|
TVD |
total variation diminishing |
|
UHV |
ultra high vacuum |
|
USB |
universal serial bus |
|
UV |
ultraviolet |
|
VSAT |
vertical stacked array transi |
|
YSZ |
yttria-stabilized zirconia |