- 2.1. Important properties of SiO (silicon dioxide).
- 2.2. Rate constants describing (111) oriented silicon oxidation kinetics at 1atm pressure. For the corresponding values for (100) oriented silicon, values should be divided by 1.68.
- 2.3. Rate constants describing oxidation kinetics at 1atm pressure using the Massoud model for various silicon orientations and temperatures from [143].
- 2.4. Arrhenius expressions for pre-exponential constants and , time constants and , and activation energies , , , and from the Massoud model presented in [143] and given in (2.40)-(2.44).
- 3.1. Effects of wire orientation on the nanowire height and width, with =0.1ms, =7V, and =55%.
- 4.1. Characteristics of atomizers commonly used for spray pyrolysis.
- 6.1. Characteristics of the precursor solutions used for the simulations.

L. Filipovic: Topography Simulation of Novel Processing Techniques