| MOSFET | metal-oxide-semiconductor field-effect transistor |
| CMOS | complementary MOSFET |
| SOI | silicon on insulator |
| GMR | giant magnetoresistance |
| TMR | tunnel magnetoresistance |
| MRAM | magnetoresistive random-access memory |
| SpinFET | spin field-effect transistor |
| FinFET | fin-shaped field-effect transistor |
| MTJ | magnetic tunnel junction |
| STT | spin transfer torque |
| UTB | ultra-thin body |
| SOC | spin-orbit coupling |
| SOF | effective spin-orbit field |
| EY | Elliot-Yafet mechanism |
| DP | D’yakonov-Perel’ mechanism |
| DOS | density of states |
| FMS | ferromagnetic semiconductor |
| TCAD | technology computer aided design |
| q | fundamental charge |
| me | electron rest mass |
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| ϵ0 | vacuum permittivity |
| ϵSi | silicon permittivity |
| a | silicon lattice constant |
| KB | Boltzmann constant |
| ℏ | reduced Planck constant |
| EF | Fermi level |
| k | wave vector |
| p | momentum vector |
| k0 | position of the valley minimum relative to the X-point in unstrained silicon |
| k0Γ | position of the valley minimum relative to the Γ-point in unstrained silicon |
| mt | transversal effective mass of silicon |
| ml | longitudinal effective mass of silicon |
| Ũ(z) | confinement potential |
| c | speed of light |
| E | electron energy |
 | electron effective mass |
| σx,y,z | Pauli matrices |
| T | temperature |
| t | film thickness |
| △SO | spin-orbit splitting |
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| εxy | shear strain component |
| NS | electron concentration |
| L | autocorrelation length |
| △ | mean square value of the surface roughness fluctuations |
| D | shear deformation potential |
| Ξ | acoustic deformation potential |
| DOP | optical deformation potential |
| νTA | transversal acoustic phonon velocity |
| νLA | longitudinal acoustic phonon velocity |
| ωop | frequency of the optical phonons |
| τs | spin lifetime |
| τm | momentum relaxation time |
| Θ | polar angle defining the spin injection orientation in (001) plane |
| Φ | azimuthal angle defining the spin injection orientation in (001) plane |
| ΔΓ | splitting at Γ-point in unstrained silicon |
| Jn | electron current density vector |
| Jp | hole current density vector |
| μn | electron mobility |
| μp | hole mobility |
| Dn | electron diffusion coefficient |
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| Ẽ | electric field vector |
| V | electric potential |
| ND | donor doping concentration per unit volume |
| NC | effective density of states in the conduction band |
| ∇ | nabla operator |
 | time |
| VT | thermal potential |
| n↑ | up-spin electron concentration per unit volume |
| n↓ | down-spin electron concentration per unit volume |
| s | spin concentration per unit volume |
| M↑ | up-spin chemical potential |
| M↓ | down-spin chemical potential |
| G | spin chemical potential drop |
| P | bulk spin polarization (ferromagnet) |
| Js | spin current density vector |
| Li | intrinsic spin diffusion length |
| λD | Debye charge screening length |
| Lu | up-stream spin diffusion length |
| Ld | down-stream spin diffusion length |
| α | polarization for spin current density |
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| β | polarization for spin density |
| α0 | polarization for spin current density at the boundary |
| β0 | polarization for spin density at the boundary |
| B(x) | Bernoulli function |
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