As the SpinFET’s operation demands the presence of a rather strong spin-orbit coupling SOC, the focus of the research has been concentrated on III-V materials which have a strong SOC. Therefore, until recently, silicon, the main material used by modern microelectronics, was kept aside from the main stream spin-related applications. On the other hand, there also have been predictions on alternative channel materials with a mobility higher than in silicon [43]. However, silicon possesses several properties attractive for spintronics [44]: it is composed of nuclei with predominantly zero spin [45] and it is characterized by a weak spin-orbit coupling [46, 47, 48]. Along with this, the spatial inversion symmetry of the lattice results in the absence of the Dresselhaus effective spin-orbit interaction [49] which results in a low relaxation rate accompanied by a longer spin lifetime as compared to other semiconductors. In fact, silicon has the longest spin lifetime of any inorganic bulk semiconductor at room temperature [48]. At the saturation drift velocity of silicon (≈107cms-1), this corresponds to a transport length scale exceeding 1mm [50]. It is therefore an attractive material for propagating spin information over a long distance. The use of silicon for spin driven devices would greatly facilitate their integration with MOSFETs on the same chip. These characteristics have motivated a wide interest in silicon spintronics [51, 52, 53]. The proposal of a spintronic device facilitating silicon that uses spin at every stage of its operation [54] is very important on the transition from charge-based CMOS towards a purely spin-based successor (i.e. an all-spin logic device) [11].