The basic semiconductor equations as given above determine the structure of the equation system. These equations need to be complemented by a set of physical parameters which depend on the materials of the device. The most important parameters are the generation/recombination rates, the carrier mobilities, and the energy relaxation times needed for HD simulations. Different mobility models are used for DD and HD simulations. These will be reviewed in Section 3.2.1 without consistency considerations.

However, especially when trying to compare DD to HD simulation results it is of utmost importance to use a consistent parameter set, in the sense that the HD model must deliver equivalent results to the DD model under homogeneous conditions. This issue will be subject to Section 3.2.3.

- 3.2.1 Mobility Model
- 3.2.2 Energy Relaxation Time
- 3.2.3 Consistent Physical Parameters
- 3.2.4 Velocity Overshoot
- 3.2.5 Low-Field Mobility Reconsidered

1999-05-31