next up previous contents
Next: 3.3.1 Homogeneous Semiconductor Up: 3. Device Equations Previous: 3.2.5 Low-Field Mobility Reconsidered

3.3 Examples

The above models were implemented in MINIMOS-NT and several simulations were carried out to confirm the theoretical results and the validity of the simplifying assumptions.

Figure 3.8: a) Geometry of the homogeneous doped semiconductor. b) Geometry of Gummel's pentagon.
\psfrag{0} [c][c]{$\scriptscriptstyle 0$}
\psfrag{1} [c][c... x\ \ [\mu m]$}
\psfrag{0.0} [c][c]{$\scriptscriptstyle 0$}
\psfrag{0.5} [...
...le x\ \ [\mu m]$}

Tibor Grasser