t |
... | a time step |

x |
... | a grid point difference |

, , | ... | electron, hole, and general exponents in mobility models |

... | damping control parameter | |

... | dielectric constant | |

... | relative dielectric constant | |

... | lattice heat capacity | |

, | ... | thermal conductivity of electron and hole gas |

... | mobility of carrier type | |

... | mobility due to lattice scattering | |

... | mobility due to lattice and impurity scattering | |

... | mobility due to lattice, impurity, and surface scattering | |

... | mobility including lattice, impurity, surface scattering, and high-field reduction | |

... | mobility including lattice, impurity, surface scattering, and high-temperature reduction | |

, | ... | electron and hole mobilities |

... | lattice mass density | |

... | energy relaxation times for electrons, holes, and general carrier type | |

... | node voltage for mixed-mode simulation | |

... | node voltage for mixed-mode simulation applied to a contact | |

, | ... | quasi-Fermi potentials for electrons and holes |

... | contact potential for mixed-mode simulation | |

... | electrostatic potential | |

... | Built-In potential | |

C |
... | net doping concentration |

E |
... | local electric field |

E_{b} |
... | local band edge energy for electrons or holes |

E_{C} |
... | local band edge energy for electrons |

E_{g} |
... | bandgap energy |

E_{i} |
... | intrinsic Fermi level |

E_{V} |
... | local band edge energy for holes |

F_{n}, F_{p} |
... | driving force for electrons and holes |

I_{b}^{i, j} |
... | electron or hole current between the grid points i and j |

J_{n},
J_{p} |
... | electron and hole current densities |

N_{C} |
... | effective density of states for electrons |

N_{C, 0} |
... | effective density of states for electrons evaluated at reference temperature T_{0} |

N_{i} |
... | concentration of the i-th active dopand |

N_{T} |
... | total impurity concentration |

N_{V} |
... | effective density of states for holes |

N_{V, 0} |
... | effective density of states for holes evaluated at reference temperature T_{0} |

R |
... | net recombination rate |

R^{AU} |
... | Auger recombination rate |

R^{BB} |
... | band to band tunneling recombination rate |

R^{II} |
... | impact ionization recombination rate |

R_{i} |
... | net recombination rate of the i-th box |

R^{SRH} |
... | SRH net recombination rate |

R_{T} |
... | thermal resistance |

S_{n},
S_{p} |
... | electron and hole heat flux density |

S_{L} |
... | lattice heat flux density |

T_{C} |
... | contact temperature |

T_{L} |
... | local lattice temperature |

T_{n}, T_{p} |
... | electron and hole temperatures |

V_{T} |
... | thermal voltage for a certain lattice temperature |

V_{i} |
... | the box volume of the i-th box |

c_{L} |
... | specific lattice heat capacity |

d |
... | damping parameter |

f_{x} |
... | vector function of the equation system |

h |
... | Planck constant |

... | reduced Planck constant | |

k_{B} |
... | Boltzmann constant |

m_{n, p} |
... | absolute electron and hole mass |

m_{n, p}^{ * } |
... | effective electron and hole mass |

n |
... | electron concentration |

p |
... | hole concentration |

q | ... | elementary charge |

u_{x} |
... | update vector of the equation system |

v_{n, 300}, v_{p, 300} |
... | thermal electron and hole velocities at 300 K |

x |
... | solution vector of the equation system |

x^{*} |
... | new approach to the solution vector of the equation system |

y^{ref} |
... | surface reference distance |

1999-05-31