next up previous contents
Next: 7.1.2 Silicon-Germanium HBT Up: 7.1 Devices Previous: 7.1 Devices

7.1.1 MOS Transistors

The MOS transistors taken for the following simulation have been thoroughly discussed in Section 3.3.3 and Section 3.3.4. Both the long- and short-channel devices have been used to demonstrate the impact of non-local effects.

Tibor Grasser