models = "potential,electron[NMOS1(Channel)],hole[PMOS3(Semi)]";
In words: Use the potential group for devices on all segments (equivalent to potential[*(*)]), use the electron group for the device named NMOS1 on segment Channel only, and use the hole group for the device named PMOS3 on segment Semi only. The general syntax is:
keyword = "quantity[devices(segments)]";
keyword = "quantity[T*(Cap*,Channel),BJT*(Base,Coll*),NMOS]";
In words: Take quantity quantity for all devices with names beginning with the letter T on all segments beginning with Cap and the segment Channel, for all devices beginning with the letters BJT on all segments beginning with Coll and the segment Base, and for all segments of the device name NMOS.
The exclamation mark (!) can be used as negation for segment names and applies for all following segment names, e.g., use quantity on all segments not named Channel and Spacer:
keyword = "quantity[devices(!Channel,Spacer)]";
Only one exclamation mark is possible and must be given before any segment names. For most of the simulations this high flexibility might be an overkill. To simplify usage for standard cases auxiliary variables located in the Phys section of each device are available. These keywords are used to create the default model lists found in the Eas section.
Using the complete DD equation set for all segments the following model list is generated:
models = "terminal,potential,potentialInt," "electrons,electronsInt,holes,holesInt,srh";
If only the majority carriers should be used for a CMOS inverter the following list is generated
models = "terminal,potential,potentialInt," "electrons[NMOS],electronsInt[NMOS],holes[PMOS],holesInt[PMOS]";For the A709 in Chapter 7 self-heating was only considered for the transistors T1, T2, T9, and T15 using the model list
models = "terminal,potential,potentialInt," "electrons,electronsInt,holes,holesInt,selfHeating[T1,T2,T9,T15]";