[1]   T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, and M. Nelhiebel, “The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps,” IEEE Transactions on Electron Devices, vol. XX, 2011, Invited Journal.

[2]   Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, and T. Grasser, “Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs,” in Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices, 2011, pp. 11–14, Talk at the SISPAD, Osaka, Japan; 2011-09-08 – 2011-09-10.

[3]   J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T.Y. Hoffmann, and G. Groeseneken, “On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled pMOSFETs,” Microelectronic Engineering, vol. 88, no. 7, pp. 1388–1391, 2011, Journal.

[4]   T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, and M. Nelhiebel, “Recent Advances in Understanding the Bias Temperature Instability,” in Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM), 2010, pp. 82–85, Invited Talk at the IEDM, San Francisco; 2010-12-06 – 2010-12-08.

[5]   W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, and T. Grasser, “Charge Trapping and the Negative Bias Temperature Instability,” in Physics and Technology of High-k Materials 8, pp. 565–589. ECS Transactions, 2010, Invited Book Contribution.

[6]   W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, and T. Grasser, “Charge Trapping and the Negative Bias Temperature Instability,” in Meet. Abstr. - Electrochem. Soc. 2010, 2010, Talk at the 218^th ECS Meeting, Las Vegas, USA; 2010-10-10 – 2010-10-15.

[7]   Ph. Hehenberger, H. Reisinger, and T. Grasser, “Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs,” in Final Report of IEEE International Integrated Reliability Workshop, 2010, pp. 8–11, Talk at the IIRW, California, USA; 2010-10-17 – 2010-10-21.

[8]   T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, and M. Nelhiebel, “Understanding Negative Bias Temperature Instability in the Context of Hole Trapping,” Microelectronic Engineering, vol. 86, no. 7-9, pp. 1876–1882, 2009, Invited Journal.

[9]   T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, and B. Kaczer, “Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise,” in Proceedings of the International Electron Devices Meeting, 2009, Talk at the IEDM, Baltimore, USA; 2009-12-07 – 2009-12-09.

[10]   Ph. Hehenberger, P.-J. Wagner, H. Reisinger, and T. Grasser, “On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress,” Microelectronics Reliability, vol. 49, pp. 1013–1017, 2009, Journal.

[11]   Ph. Hehenberger, P.-J. Wagner, H. Reisinger, and T. Grasser, “On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress,” in Proceedings of the 20^th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 2009, Talk at the ESREF, Bordeaux, France; 2009-10-05 – 2009-10-09.

[12]   Ph. Hehenberger, P.-J. Wagner, H. Reisinger, and T. Grasser, “Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation,” in Proceedings of the 39^th European Solid-State Device Research Conference, 2009, pp. 311–314, Talk at the ESSDERC, Athens, Greece; 2009-09-14 – 2009-09-18.

[13]   T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, and M. Nelhiebel, “A Two-Stage Model for Negative Bias Temperature Instability,” in 2009 IEEE International Reliability Physics Symposium Proceedings, 2009, pp. 33–44, Talk at the IRPS, Montreal, Canada; 2009-04-26 – 2009-04-30.

[14]   Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, and M. Nelhiebel, “Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique,” in 2009 IEEE International Reliability Physics Symposium Proceedings, 2009, pp. 1033–1038, Poster Presentation at the IRPS, Montreal, Canada; 2009-04-26 – 2009-04-30.

[15]    W. Gös, M. Karner, S. Tyaginov, Ph. Hehenberger, and T. Grasser, “Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping,” in International Conference on Simulation of Semiconductor Processes and Devices 2008, 2008, pp. 69–72, Talk at the SISPAD, Hakone, Japan; 2008-09-09 – 2008-09-11.

[16]   T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, and B. Kaczer, “A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability,” IEEE Transactions on Device and Materials Reliability, vol. 8, no. 3, pp. 526–535, 2008, Journal.

[17]   T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, and C. Schlünder, “Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability,” in International Electron Devices Meeting 2007, 2007, pp. 801–804, Talk at the IEDM, Washington, DC, USA; 2007-12-10 – 2007-12-12.

[18]   T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, and B. Kaczer, “A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability,” in 2007 IEEE International Integrated Reliability Workshop Final Report, 2007, pp. 6–11, Talk at the IIRW, Fallen Leaf Lake, USA; 2007-10-15 – 2007-10-18.