List of Symbols

Symbol

Unit

Description
     
Cox

   −2
Fm

Areal gate oxide capacitance
E
  A

eV

Activation energy
EB

eV

Binding energy
ΔEB

eV

Thermally activated barrier
Ec

eV

Conduction bandedge energy
Ef

eV

Fermi energy
Eox

   −1
Vm

Oxide electric field
E
 s

Vm −1

Electric field at the surface
Ev

eV

Valence bandedge energy
Ei

eV

Energy of defect state i
Eij

eV

Energy difference Ei − Ej
ϵii′

eV

Energy barrier for the metastable transition     ′
i → i
ϵij

eV

Energy barrier for the transition i → j
ϵr

1

Relative permittivity
g
 m

AV −1

Transconductance
Icp

A

Charge pumping current
ID

A

Drain current
ID,0

A

Initial drain current
ΔID

A

Drain current shift
ID,lin

A

Linear drain current
ITH

A

Drain current criterion
k
 f

s−1

Forward transition rate
kr

s−1

Reverse transition rate
kij

s−1

Transition rate for i → j
L

m

Gate length
μeff

m2V −1s−1

Effective mobility
Nit

m −2

Number of interface states per area
Not

m −2

Number of oxide traps per area
Nv

m −3

Effective valence band weight
Qit

   −2
Cm

Interface charge per area
Qot

   −2
Cm

Oxide charge per area
Qs

   −2
Cm

Surface charge density
qi

m

Reaction coordinate equilibrium of state i
S ℏω

eV

Relaxation energy
σp

m2

Cross section of holes
τc

s

Capture time constant
τe

s

Emission time constant
tM

s

Measurement delay time
tox

m

Oxide thickness
tP

s

Pulse period
trel

s

Relaxation time
tstr

s

Stress time
VD

V

Drain voltage
V
 G

V

Gate voltage
Vrel

V

Gate relaxation voltage
Vstr

V

Gate stress voltage
Vi

V

Adiabatic potential of state i
VTH

V

Threshold voltage
VTH,0

V

Initial threshold voltage
ΔV
   TH

V

Threshold voltage shift
v
 th,p

ms− 1

Thermal velocity of holes
Vθ

V

Threshold voltage after the compact model
ΔV θ

V

Threshold voltage shift after the compact model
ΔV OθTF,x

V

Threshold voltage shift by means of OTF,x
W

m

Gate width
ωi

s−1

Vibronic frequency of state i
xT

m

Oxide trap depth (referenced to interface)
 Physical Constants
 Chemical Symbols