List of Symbols

Symbol	Unit	Description

$Cox$	$−2 Fm$	Areal gate oxide capacitance
$E A$	$eV$	Activation energy
$EB$	$eV$	Binding energy
$ΔEB$	$eV$	Thermally activated barrier
$Ec$	$eV$	Conduction bandedge energy
$Ef$	$eV$	Fermi energy
$Eox$	$−1 Vm$	Oxide electric field
$E s$	$Vm −1$	Electric field at the surface
$Ev$	$eV$	Valence bandedge energy
$Ei$	$eV$	Energy of defect state $i$
$Eij$	$eV$	Energy difference $Ei − Ej$
$ϵii′$	$eV$	Energy barrier for the metastable transition $′ i → i$
$ϵij$	$eV$	Energy barrier for the transition $i → j$
$ϵr$	$1$	Relative permittivity
$g m$	$AV −1$	Transconductance
$Icp$	$A$	Charge pumping current
$ID$	$A$	Drain current
$ID,0$	$A$	Initial drain current
$ΔID$	$A$	Drain current shift
$ID,lin$	$A$	Linear drain current
$ITH$	$A$	Drain current criterion
$k f$	$s−1$	Forward transition rate
$kr$	$s−1$	Reverse transition rate
$kij$	$s−1$	Transition rate for $i → j$
$L$	$m$	Gate length
$μeff$	$m2V −1s−1$	Effective mobility
$Nit$	$m −2$	Number of interface states per area
$Not$	$m −2$	Number of oxide traps per area
$Nv$	$m −3$	Effective valence band weight
$Qit$	$−2 Cm$	Interface charge per area
$Qot$	$−2 Cm$	Oxide charge per area
$Qs$	$−2 Cm$	Surface charge density
$qi$	$m$	Reaction coordinate equilibrium of state $i$
$S ℏω$	$eV$	Relaxation energy
$σp$	$m2$	Cross section of holes
$τc$	$s$	Capture time constant
$τe$	$s$	Emission time constant
$tM$	$s$	Measurement delay time
$tox$	$m$	Oxide thickness
$tP$	$s$	Pulse period
$trel$	$s$	Relaxation time
$tstr$	$s$	Stress time
$VD$	$V$	Drain voltage
$V G$	$V$	Gate voltage
$Vrel$	$V$	Gate relaxation voltage
$Vstr$	$V$	Gate stress voltage
$Vi$	$V$	Adiabatic potential of state $i$
$VTH$	$V$	Threshold voltage
$VTH,0$	$V$	Initial threshold voltage
$ΔV TH$	$V$	Threshold voltage shift
$v th,p$	$ms− 1$	Thermal velocity of holes
$Vθ$	$V$	Threshold voltage after the compact model
$ΔV θ$	$V$	Threshold voltage shift after the compact model
$ΔV OθTF,x$	$V$	Threshold voltage shift by means of OTF,x
$W$	$m$	Gate width
$ωi$	$s−1$	Vibronic frequency of state $i$
$xT$	$m$	Oxide trap depth (referenced to interface)