Starting with (14.2) and the
measurements from [95] we adjusted a model for the formation
and dissolution of silicon self-interstitial clusters, namely

with values from Table 14.3.
Although different values were also examined, the exponents in the
first term were found to be equal to
(
), because two isolated
interstitials can form a new cluster. Good results were achieved with
and
, which means
the rate of free interstitials joining already existing clusters
depends linearly on the number of excess interstitials (interstitials
above the equilibrium concentration) and a linear combination of the
number of clusters and interstitials. Finally the exponent
was found to be . This means that the rate of
dissolution depends on the concentration of clustered interstitials
and on the factor .
The terms responsible for cluster formation in both models don't share
a common structure, thus we finally compare the results for the
dissolution term. In (14.1) the dissolution term is

where the values for and given in [99] are
and
.
agrees very well with the values found for
in Table 14.3, namely
for the high parameter set and
for the low parameter set.
In summary, a refined model for the formation and dissolution of
silicon self-interstitial clusters was calibrated to published
measurements for two different technologies (corresponding to two sets
of material parameters) and very good agreement was achieved.

Clemens Heitzinger
2003-05-08