




The example is a threedimensional CMOS structure as shown in Figure 11.2 and Figure 11.3, which consists of polysilicon in the upper part, of silicon dioxide in the middle part, and silicon in the lower part. A boron dose of with an energy of was implanted in a Monte Carlo simulation [52,50,51] using an isotropic homogeneous grid. The resulting concentration of boron interstitial atoms in is shown in Figures 11.4, 11.5, 11.6, 11.7, and 11.8. The new anisotropic inhomogeneous grid with 78651 grid points is additionally shown in Figure 11.4. In Figures 11.4, 11.5, 11.7, and 11.8 the new algorithm was applied on grids, whereas in Figure 11.6 least squares fits of polynomials of degree two on grids of the same size were performed.
Obviously the result in Figure 11.6 is inferior to the result yielded by the algorithm described in the previous section. The new algorithm provides very good smoothing and yields concentration values at the grid points that can serve as input to subsequent simulation steps without problems.
Clemens Heitzinger 20030508