N.D. Arora, J.R. Hauser, and D.J. Roulston.
Electron and Hole Mobilities in Silicon as a Function of Concentration
and Temperature. IEEE Trans. Electron Devices, ED-29(2):292-295, 1982.
Alf77
L.C.R. Alfred.
Charge Screening in an Electron Gas of Arbitrary Degeneracy. Phys. stat. sol. (b), 82:467-471, 1977.
AS72
M. Abramowitz and I.A. Stegun. Handbook of Mathematical Functions.
Dover, 1972.
AS83
B.K. Agarwal and N. Singh.
Friedel Sum Rule in the Second Born Approximation. Phys. Lett. A, 95(6):319-320, 1983.
Bac57
G. Backenstoss.
Conductivity Mobilities of Electrons and Holes in Heavily Doped Silicon.
Physical Review, 108(6):1416-1418, 1957.
BF59
P. Budini and G. Furlan.
Electron-Positron Elastic Scattering from Extended Nuclei. Nuov. Cim, 13(4):790-801, 1959.
BK82
W. Brandt and M. Kitagawa.
Effective Stopping-Power Charges of Swift Ions in Condensed Matter. Physical Review B, 25(9):5631-5637, 1982.
BK84
G. Berthold and P. Kocevar.
Self-Consistent Screening of Ionised Impurities by Drifting Charge Carriers
in Semiconductors. J. Phys. C: Solid State Phys., 17:4981-4988, 1984.
BKBM+87
S. Bandyopadhyay, M.E. Klausmeier-Brown, C.M. Maziar, S. Datta, and
M.S. Lundstrom.
A Rigorous Technique to Couple Monte Carlo and Drift-Diffusion Models for
Computationally Efficient Device Simulation. IEEE Trans. Electron Devices, ED-34(2):392-399, 1987.
BL92
H.S. Bennett and J.R. Lowney.
Calculated Majority- and Minority-Carrier Mobilities in Heavily Doped Silicon
and Comparisons with Experiment. J. Appl. Phys., 71:2285-2296, 1992.
Bla57
F.J. Blatt.
Scattering of Carriers by Ionized Impurities in Semiconductors. J. Phys. Chem. Solids, 1:262-269, 1957.
Bla82
J.S. Blakemore.
Approximations for Fermi-Dirac Integrals, especially the Function F1/2(x)
used to Describe Electron Density in a Semiconductor. Solid-State Electronics, 25(11):1067-1076, 1982.
BO75
G. Baccarani and P. Ostoja.
Electron Mobility Empirically Related to th Phosphorus Concentration in
Silicon. Solid-State Electronics, 18:579-580, 1975.
Boa65
A.D. Boardman.
The Theory of Dipole Scattering in Semiconductors. Proc. Phys. Soc. (London) Sect. B, 85:141-148, 1965.
BS50
J. Bardeen and W. Shockley.
Deformation Potentials and Mobilities in Non-Polar Crystals. Physical Review, 80(1):72-80, 1950.
BSM92
P.B. Allen B.A. Sanborn and G.D. Mahan.
Theory of Screening and Electron Mobility: Application to n-Type
Silicon. Physical Review B, 46(23):15123-15134, 1992.
CF88
W.-Y. Chung and D.K. Ferry.
Dynamic Screening for Ionized Impurity Scattering in Degenerate Semiconductors.
Solid-State Electronics, 31(9):1369-1374, 1988.
CG82
D. Chattopadhyay and A. Ghosal.
Electron Scattering in Heavily Doped Compensated Polar Semiconductors.
Physical Review B, 25(10):6538-6541, 1982.
CL75
T.G. Castner and N.K. Lee.
Dielectric Anomaly and the Metal-Insulator Transition in n-Type
Silicon. Physical Review Letters, 34(26):1627-1629, 1975.
CQ81
D. Chattopadhyay and H.J. Queisser.
Electron Scattering by Ionized Impurities in Semiconductors. Rev. Mod. Phys., 53(4):745-768, 1981.
Csa61
P. Csavinsky.
Effect of Impurity-Core on Carrier Mobility in Heavily Doped Germanium.
J. Phys. Soc. Jap., 16(10):1865-1869, 1961.
CT67
D.M. Caughey and R.E. Thomas.
Carrier Mobilities in Silicon Empirically Related to Doping and Field.
Proc.IEEE, 52:2192-2193, 1967.
CTZL63
P.W. Chapman, O.N. Tufte, J.D. Zook, and D. Long.
Electrical Properties of Heavily Doped Silicon. J. Appl. Phys., 34(11):3291-3295, 1963.
Dal51
R.H. Dalitz.
On Higher Born Approximations in Potential Scattering. Proc. Roy. Soc. (London), A206:509-520, 1951.
Din55
R.B. Dingle.
Scattering of Electrons and Holes by Charged Donors and Acceptors in Semiconductors.
Philos. Mag., 46(379):831-840, 1955.
Dir30
P.A.M. Dirac.
Note on Exchange Phenomena in the Thomas-Fermi Atom. Proc. Camb. Philos. Soc., 26:376-385, 1930.
Dis32
F. Distel.
Über das Gültigkeitsgebiet der Bornschen Theorie der Stoßprozesse.
Z.Phys., (74):785-809, 1932.
DK72
O.P. Daga and W.S. Khokle.
Impurity Core Effects on Electron Mobility in n-Type Silicon. J. Phys. C: Solid State Phys., 5:3473-3476, 1972.
Dzi79
J. Dziewior.
Minority-Carrier Diffusion Coefficients in Highly Doped Silicon. Appl.Phys.Lett., 35(2):170-172, 1979.
ED72
J.R. Ebden and J.W. Darewych.
Comparison of Plane-Wave Approximations in Potential Scattering. Can.J.Ph., 50:1030-1039, 1972.
EGR80
H.M.A. El-Ghanem and B.K. Ridley.
Impurity Scattering of Electrons in Non-Degenerate Semiconductors. J. Phys. C: Solid State Phys., 13:2041-2054, 1980.
Fer27
E. Fermi.
Un metodo statistico per la determinazione di alcune priorieta dell'atome.
Rend. Accad. Naz. Lincei, 6:602-607, 1927.
Fer91
D.K. Ferry. Semiconductors.
Macmillan, New York, 1991.
Fis91
M.V. Fischetti.
Effect of the Electron-Plasmon Interaction on the Electron Mobility in
Silicon. Physical Review B, 44(11):5527-5534, 1991.
FST86
Y. Furutani, M. Shigesada, and H. Totsuji.
Effective Potential of a Partially Ionized High-Z Ion. J. Phys. Soc. Jap., 55(8):2653-2670, 1986.
Fuj55
H. Fujiwara.
Theoretical Study of Residual Resistance of Binary Alloys Containing Foreign
Atoms in Small Concentrations. J. Phys. Soc. Jap., 10(5):339-346, 1955.
Gom49
P. Gombas. Die statistische Theorie des Atomes und ihre Anwendungen.
Springer, 1949.
GR78
E. Gerlach and M. Rautenberg.
Ionized Impurity Scattering in Semiconductors. Phys. stat. sol. (b), 86:479-482, 1978.
Gra88
D. Grau. Übungsaufgaben zur Quantentheorie.
Hanser, 1988.
GSD71
A.E.S. Green, D.L. Sellin, and G. Darewych.
Semiempirical Atomic-Energy Formula. Physical Review A, 3(1):159-165, 1971.
Hal62
G.L. Hall.
Ionized Impurity Scattering in Semiconductors. J. Phys. Chem. Solids, 23:1147-1151, 1962.
Har56
W.A. Harrison.
Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals. Physical Review, 104(5):1281-1290, 1956.
HD82
H.F. Hess and K. DeConde.
Giant Dielectric Constants at the Approach to the Insulator-Metal Transition.
Physical Review B, 25(8):5578-5580, 1982.
Hof74
H. Hofmann. Das elektromagnetische Feld.
Springer, Wien New-York, 1974.
HS74
A.R. Holt and B. Santoso.
On the Born Series for Scattering Amplitudes. J. Phys. B: Atom. Molec. Phys., 7:1018-1023, 1974.
Irv62
J.C. Irvin.
Resistivity of Bulk Silicon and of Diffused Layers in Silicon. Bell Syst. Tech. J., 61(2):387-395, 1962.
JF91
R.P. Joshi and D.K. Ferry.
Effect of Multi-Ion Screening on the Electronic Transport in Doped Semiconductors:
A Molecular-Dynamics Analysis. Physical Review B, 43(12):9734-9739, 1991.
JF92
R.P. Joshi and D.K. Ferry.
Effects of Multi-Ion Impurity Scattering on Electron Velocities in Bulk
GaAs. Semicond. Sci. Technol., (7):B319-B321, 1992.
JL89
C. Jacoboni and P. Lugli. The Monte Carlo Method for Semiconductor Device Simulation.
Springer, Wien-New York, 1989.
R. Jost and A. Pais.
On the Scattering of a Particle by a Static Potential. Physical Review, 82(6):840-851, 1951.
JR83
C. Jacoboni and L. Reggiani.
The Monte Carlo Method for the Solution of Charge Transport in Semiconductors
with Applications to Covalent Materials. Rev.Mod.Phys., 55(3):645-705, 1983.
Kat51
T. Kato.
Note on Schwinger's Variational Method. Prog. Theor. Phys., 6(3):295-305, 1951.
KF89
C. Kittel and C.Y. Fong. Quantentheorie der Festkörper.
Oldenbourg, 1989.
KFH76
F. Kuchar, E. Fantner, and K. Hess.
Ionized Impurity Scattering in Semiconductors: InSb Doped by Neutron Irradiation.
J. Phys. C: Solid State Phys., 9:3165-3173, 1976.
KG73
Y.S. Kim and R.G. Gordon.
Study of the Electron Gas Approximation. J. Chem. Phys., 60(5):1842-1850, 1973.
KGKS97
G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr.
Monte Carlo Simulation of Electron Transport in Doped Silicon.
In High Performance Computing on the Information Superhighway - HPC
Asia '97, pages 444-449, Seoul, Korea, 1997. IEEE Computer Society
Press.
Kik54a
T. Kikuta.
Upper and Lower Bounds of Born Approximation, I. Prog. Theor. Phys., 12(2):225-233, 1954.
Kik54b
T. Kikuta.
Upper and Lower Bounds of Born Approximation, II. Prog. Theor. Phys., 12(2):234-240, 1954.
Kit86
Ch. Kittel. Introduction to Solid State Physics.
Wiley, New York, 6. edition, 1986.
KKGKS97a
Ch. Köpf, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr.
Influence of Dopant Species on Electron Mobility in InP.
In Proc. 1997 Int. Conf. on Indium Phosphide and Related Materials,
pages 280-283, Hyannis, Massachusetts, USA, 1997. IEEE.
KKGKS97b
Ch. Köpf, G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr.
Reexamination of Electron Mobility Dependence on Dopants in GaAs.
accepted for publication in ESSDERC'97 - 27th European Solid State Device
Research Conference, Stuttgart, Germany, September 1997.
KKGS97
H. Kosina, G. Kaiblinger-Grujin, and S. Selberherr.
A New Approach to Ionized-Impurity Scattering.
In International Conference on Simulation of Semiconductor Processes
and Devices, pages 205-208, Cambridge, Massachusetts, 1997.
KKL93
T. Kaneto, K.W. Kim, and M.A. Littlejohn.
Calculation of Minority-Carrier Mobilities in Heavily Doped p-Type
Semiconductors in the Dielectric-Function Formulation. Physical Review, 47(24):16257-16266, 1993.
Kla92a
D.B.M. Klaassen.
A Unified Mobility Model for Device Simulation - I. Model Equations and
Concentration Dependence. Solid-State Electronics, 35(7):953-959, 1992.
Kla92b
D.B.M. Klaassen.
A Unified Mobility Model for Device Simulation - II. Temperature Dependence
of Carrier Mobility and Lifetime. Solid-State Electronics, 35(7):961-967, 1992.
Kop84
S. Kopec.
The Connection of the Refined Born Approximation with Padé Approximants
and Stationary Variational Principles. Act.Phys.Pol., A65(6):471-481, 1984.
Kos97
H. Kosina.
Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport
Calculations. Phys. stat. sol. (b), 163:475-489, 1997.
KP57
A.S. Kompaneets and E.S. Pavlovskii.
The Self-Consistent Field Equations in an Atom. Soviet Phys. JETP, 4(3):328-336, 1957.
KT91
L.E. Kay and T.-W. Tang.
An Improved Ionized-Impurity Scattering Model for Monte Carlo Simulations.
J. Appl. Phys., 70(3):1475-1482, 1991.
Len32
W. Lenz.
Über die Anwendbarkeit der statistischen Methode auf Ionengitter.
Z.Phys., 77:713-721, 1932.
Lew56
R.R. Lewis Jr.
Potential Scattering of High-Energy Electrons in Second Born Approximation.
Physical Review, 102(2):537-543, 1956.
LF85
P. Lugli and D.K. Ferry.
Effect of Electron-Electron and Electron-Plasmon Interactions on Hot Carrier
Transport in Semiconductors. Physica B, 129B:532-536, 1985.
LN93
I.Y. Leu and A. Neugroschel.
Minority-Carrier Transport Parameters in Heavily Doped p-type Silicon
at 296 and 77 K. IEEE Trans. Electron Devices, 40(10):1872-1875, 1993.
LT77
S.S. Li and W.R. Thurber.
The Dopant Density and Temperature Dependence of Electron Mobility and
Resistivity in n-Type Silicon.
In Solid-State Electronics , 20:609-616, 1977.
LT92
S.C. Lee and T.W. Tang.
Transport Coefficients for a Silicon Hydrodynamic Model Extracted from
Inhomogeneous Monte-Carlo Calculations. Solid-State Electronics, 35(4):561-569, 1992.
Mad72
O. Madelung. Festkörpertheorie I.
Springer, 1972.
Man56
R. Mansfield.
Impurity Scattering in Semiconductors. Proc. Phys. Soc. (London) Sect. B, 69:76-82, 1956.
Mar57
N.H. March.
The Thomas-Fermi Approximation in Quantum Mechanics. Adv. in Phys., 6(21):1-98, 1957.
MB81
J.R. Meyer and F.J. Bartoli.
Phase-Shift Calculation of Ionized Impurity Scattering in Semiconductors.
Physical Review B, 23(10):5413-5427, 1981.
MB83a
J.R. Meyer and F.J. Bartoli.
Dynamic Dielectric Response to Electron-Hole and Electron-Electron Interactions.
Physical Review B, 28(2):915-926, 1983.
MB83b
J.R. Meyer and F.J. Bartoli.
Effect of Coherent Multi-Ion Interference on Ionized-Impurity Scattering
in Semiconductors. Physical Review B, 30(2):1026-1029, 1983.
MB85
J.R. Meyer and F.J. Bartoli.
Ionized-Impurity Scattering in the Weak-Screening Limit. Physical Review B, 31(4):2353-2359, 1985.
MB86
J.R. Meyer and F.J. Bartoli.
Multi-Ion Screening in Uncompensated Semiconductors. Physical Review Letters, 57(20):2568-2571, 1986.
MB87
J.R. Meyer and F.J. Bartoli.
Ionized-Impurity Scattering in the Strong-Screening Limit. Physical Review B, 36(11):5989-6000, 1987.
MBCR93
S.N. Mohammad, A.V. Bemis, R.L. Carter, and R.B. Renbeck.
Temperature, Electric Field, and Doping Dependent Mobilities of Electrons
and Holes in Semiconductors. Solid-State Electronics, 36(12):1677-1683, 1993.
McI60
E.C. McIrvine.
Screened Impurity Potentials in Metals. J. Phys. Soc. Jap., 15:928, 1960.
MDB96
N.S. Mansour, K. Diff, and K.F. Brennan.
Effect of Inclusion of Self-Consistently Determined Electron Temperature
on the Electron-Plasmon Interaction. J. Appl. Phys., 80(10):5770-5774, 1996.
Mes90a
A. Messiah. Quantenmechanik, Bd. 1.
deGruyter, Berlin, 1990.
Mes90b
A. Messiah. Quantenmechanik, Bd. 2.
deGruyter, Berlin, 1990.
Mey79
J.R. Meyer.
Numerical Solution to the Nonlinear Poisson's Equation Including a Spatially
Variable Dielectric Constant. Physical Review B, 20(4):1762-1765, 1979.
MF53a
P.M. Morse and H. Feshbach. Methods of Theoretical Physics, Part I.
McGraw-Hill, 1953.
MF53b
P.M. Morse and H. Feshbach. Methods of Theoretical Physics, Part II.
McGraw-Hill, 1953.
Mic69
B. Michalik.
A New Method of Removal of the Divergence in the Born Series I. Theory.
Ann.Phys.(N.Y.), (55):41-60, 1969.
MM54
F.J. Morin and J.P. Maita.
Electrical Properties of Silicon Containing Arsenic and Boron. Physical Review, 96(1):28-35, 1954.
MM62
N.H. March and A.M. Murray.
Perturbations in an Electron Gas at Non-Zero Temperatures. Proc. Phys. Soc., 79:1001-1010, 1962.
MO70
B.L. Moiseiwitsch and T.J. O'Brien.
Application of Fredholm Theory to Elastic Scattering. J. Phys. B: Atom. Molec. Phys., 3:191-197, 1970.
C. Møller.
Über die höheren Näherungen der Bornschen Stoßmethode.
Z.Phys., (66):513-532, 1930.
Moo67a
E.J. Moore.
Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors.
I. Formal Theory. Physical Review, 160(3):607-617, 1967.
Moo67b
E.J. Moore.
Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors.
II. Mobility of n-Type Gallium Arsenide. Physical Review, 160(3):618-626, 1967.
MOP74
F. Mousty, P. Ostoja, and L. Passari.
Relationship between Resistivity and Phosphorus Concentration in Silicon.
J. Appl. Phys., 45(10):4576-4580, 1974.
Mow52
L. Mower.
Tables for Second Born Approximation Scattering from Various Potential
Fields. Physical Review, 89(5):947-949, 1952.
MSS83
G. Masetti, M. Severi, and S. Solmi.
Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-,
Phosphorus- and Boron-Doped Silicon. IEEE Trans. Electron Devices, ED-30(7):764-769, 1983.
NBL73
P. Norton, T. Braggins, and H. Levinstein.
Impurity and Lattice Scattering Parameters as Determined from Hall and
Mobility Analysis in n-type Silicon. Physical Review B, 8(12):5632-5653, 1973.
Neu85
A. Neugroschel.
Minority-Carrier Diffusion Coefficients and Mobilities in Silicon. IEEE Electron Device Lett., EDL-6(8):425-427, 1985.
NM49
N.F.Mott and H.S.W. Massey. The Theory of Atomic Collisions.
Clarendon Press, Oxford, 1949.
OFM63
E.M. Omel'yanovskii, V.I. Fistul, and M.G. Mil'vidskii.
Electron Mobility in Heavily Doped Silicon. Soviet Phys. Solid-State, 5(3):676-679, 1963.
PL89
J.D. Patterson and S.L. Lehoczky.
The Second Born Approximation and the Friedel Sum Rule. Phys. Lett. A, 137(3):137-138, 1989.
PSB96
V.V. Popov, T.I. Solodkaya, and T.Yu. Bagaeva.
Monte Carlo Study of Electron-Plasmon Scattering Effect on Hot Electron
Transport in GaAs. Physica B, 217:118-126, 1996.
RH86
J.M. Rorison and D.C. Herbert.
Electron-Electron Interaction in Semiconductors with Application to Hot-Electron
Transistors in Silicon and Gallium Arsenide. J. Phys. C: Solid State Phys., 19:3991-4010, 1986.
Rid77
B.K. Ridley.
Reconciliation of the Conwell-Weisskopf and Brooks-Herring Formulae for
Charged-Impurity Scattering in Semiconductors: Third-Body Interference.
J.Phys.C, 10:1589-1593, 1977.
B.K. Ridley. Quantum Processes in Semiconductors.
Clarendon Press, Oxford, 1993.
RM85
P.R. Rimbey and G.D. Mahan.
Donor-Acceptor Pair Scattering in Compensated Semiconductors. J. Appl. Phys., 57(8):2812, 1985.
RSE75
H.I. Ralph, G. Simpson, and R.J. Elliot.
Central-Cell Corrections to the Theory of Ionized-Impurity Scattering in
Silicon. Physical Review, 11(8):2948-2956, 1975.
Sca96
L.M. Scarfone.
Thomas-Fermi-Type Dielectric Screening of Statistical Atomic Models of
Donor-Specific Impurities in a Semiconductor-Like Valence Electron Gas
at Zero Temperature. J. Phys. C: Solid State Phys., 8:5585-5602, 1996.
Sch47
J. Schwinger.
A Variational Principle for Scattering Problems. Physical Review, 72(8):742, 1947.
Sch93
E.F. Schubert. Doping in III-V Semiconductors.
Cambridge University Press, 1993.
Sch94
A. Schenk.
Silicon Bulk Mobility Model for Hydrodynamic Transport Equations.
Technical Report 94/20, Integrated Systems Laboratory, ETH Zürich,
1994.
Scl56
N. Sclar.
Ionized Impurity Scattering in Nondegenerate Semiconductors. Physical Review, 104(6):1548-1560, 1956.
SDO85
H.K. Sy, D.K. Desai, and C.K. Ong.
Electron Screening and Mobility in Heavily Doped Silicon. Phys. stat. sol. (b), 130/2:787-791, 1985.
See89
K. Seeger. Semiconductor Physics.
Springer, 1989.
Sel84
S. Selberherr. Analysis and Simulation of Semiconductor Devices.
Springer, Wien New-York, 1984.
Shi76
C. Shih.
Hartree-Fock Densities in Thomas-Fermi-Dirac Formulas Including the Inhomogeneity
Term. Physical Review A, 14(3):919-921, 1976.
Sin93
J. Singh. Physics of Semiconductors and their Heterostructures.
McGraw Hill, 1993.
SKS86
S.E. Swirhun, D.E. Kane, and R.M. Swanson.
Measurements of Electron Lifetime, Electron Mobility and Band-Gap Narrowing
in Heavily Doped p-Type Silicon.
In Int. Electron Devices Meeting, pages 24-27, Los Angeles, 1986.
IEEE.
SKS88
S.E. Swirhun, D.E. Kane, and R.M. Swanson.
Temperature Dependence of Minority Electron Mobility and Band-Gap Narrowing
in p+ Si.
In Int. Electron Devices Meeting, pages 298-301, 1988.
SPMC88
E. Susi, L. Passari, M. Merli, and M.C. Carotta.
Determination of Minority Carrier Mobility in Silicon from Stationary and
Transient Lifetime Measurements. Phys. stat. sol. (a), 106:583-587, 1988.
SRV88
E. Sangiorgi, B. Riccó, and F. Venturi.
MOS2: An Efficient MOnte Carlo Simulator for MOS Devices. IEEE Trans. Computer-Aided Design, 7(2):259-271, 1988.
Ste67
F. Stern.
Friedel Phase-Shift Sum Rule for Semiconductors. Physical Review, 158(3):697-698, 1967.
Str62
R. Stratton.
Dipole Scattering from Ion Pairs in Compensated Semiconductors. J.Phys.Chem.Solids, 23:1011-1017, 1962.
SV74
H.P. Stüwe and G. Vibrans. Feinstrukturuntersuchungen in der Werkstoffkunde: Eine Einführung
in die Beugungsverfahren.
Bibliographisches Institut, 1974.
Swi87
S.E. Swirhun. Characterization of Majority and Minority Carrier Transport in in Heavily
Doped Silicon.
PhD thesis, Stanford University, 1987.
Tak59
N. Takimoto.
On the Screening of Impurity Potential by Conduction Electrons. J. Phys. Soc. Jap., 14(9):1142-1158, 1959.
Thi90
W. Thirring, editor. The Stability of Matter: From Atoms to Stars.
Springer, 1990.
Tho27
L.H. Thomas.
The Calculation of Atomic Fields. Proc. Camb. Philos. Soc., 23:542-548, 1927.
Tom93
K. Tomizawa. Numerical Simulation of Submicron Semiconductor Devices.
Artech House, 1993.
VSS+88
F. Venturi, R.K. Smith, E. Sangiorgi, M.R. Pinto, and B. Riccò.
A New Coupling Scheme for a Self-Consistent Poisson and Monte Carlo Device
Simulator.
In G. Baccarani and M. Rudan, editors, Simulation of Semiconductor Devices
and Processes, volume 3, pages 383-386, Bologna, 1988. Tecnoprint.
vW35
C.F. von Weizsäcker.
Zur Theorie der Kernmassen. Z.Phys., 96:431-458, 1935.
WO75
T. Wu and T. Ohmura. Quantum Theory of Scattering.
Prentice-Hall, 1975.
Wol60
K. Wolfstirn.
Hole and Electron Mobilities in Doped Silicon from Radiochemical and Conductivity
Measurements. J. Phys. Chem. Solids, 16:279-284, 1960.
YMS67
C. Yamanouchi, K. Mizuguchi, and W. Sasaki.
Electric Conduction in Phosphorus-Doped Silicon at Low Temperatures. J. Phys. Soc. Jap., 22(3):859-864, 1967.
YT65
K. Yonei and Y. Tomishima.
On the Weizsäcker Correction to the Thomas-Fermi Theory of the Atom.
J. Phys. Soc. Jap., 20(6):1051-1057, 1965.