KAIBLINGER-GRUJIN G., KOSINA
H., An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations,
Proceedings International Workshop on Computational Electronics,
(30. Oct.-2. Nov. 1995, Tempe, Arizona) p.25.
[2]
KAIBLINGER-GRUJIN G., KOSINA
H., SELBERHERR S., Dependence of Electron Mobility
on Dopants in Heavily Doped Semiconductors, Abstracts 21. Condensed
Matter Physics Meeting, (4.-7. Feb. 1997, Pakota Island, New Zealand),
p.TA02.
[3]
KAIBLINGER-GRUJIN G., KOSINA
H., SELBERHERR S., Monte Carlo Simulation of Electron
Transport in Doped Silicon, Proceedings High Performance Computing Asia
1997 Conference, (28. April-2. May 1997, Seoul, South Korea), pp.444-449.
[4]
KöPF CH., KAIBLINGER-GRUJIN
G., KOSINA H., SELBERHERR S.,
Influence of Dopant Species on Electron Mobility in InP, Proceedings International
Conference on Indium Phosphide and Related Materials, (11.-15. May
1997, Hyannis, Cape Cod, MA), pp.280-283.
[5]
KAIBLINGER-GRUJIN G., KOSINA
H., SELBERHERR S.. Electron Mobility in Doped Semiconductors,
Abstracts International Conference on Computational Physics, (2.-4.
June 1997, Singapore), pp.30-31.
[6]
KAIBLINGER-GRUJIN G., KOSINA
H., KöPF CH., SELBERHERR
S., Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors
Proceedings International Conference on Defects in Semiconductors,
(21.-25. July 1997, Aveiro, Portugal), to be published in Materials
Science Forum.
[7]
KOSINA H., KAIBLINGER-GRUJIN
G., SELBERHERR S., A New Approach to Ionized-Impurity
Scattering, Proceedings International Conference on Simulation of Semiconductor
Processes and Devices, (8.-10. Sept. 1997, Cambridge, MA), pp. 205-208.
[8]
KöPF CH., KAIBLINGER-GRUJIN
G., KOSINA H., SELBERHERR S.,
Reexamination of Electron Mobility Dependence on Dopants in GaAs, Proceedings
27. European Solid-State Device Research Conference, (22-24. Sept.
1997, Stuttgart), pp. 304-307.
[9]
KAIBLINGER-GRUJIN G., KöPF
CH., KOSINA H., SELBERHERR
S., Dependence of Electron Mobility on Impurities in Compound Semiconductors,
Proceedings 10. III-V Semiconductor Device Simulation Workshop,
(16-18. Okt. 1997, Torino).
[10]
KOSINA H., KAIBLINGER-GRUJIN
G., Modeling of Ionized Impurity Scattering in Silicon, to be published
in Solid State Electronics.
[11]
KAIBLINGER-GRUJIN G., KOSINA
H., SELBERHERR S., A Universal Low-Field Mobility
Model for Semiconductor Device Simulation, submitted to IEEE Transactions
on Electron Devices.
[12]
KAIBLINGER-GRUJIN G., KOSINA
H., SELBERHERR S., Influence of the Doping Element
on the Electron Mobility in n-Silicon, submitted to Journal of
Applied Physics.