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Next: Curriculum Vitae Up: Dissertation G. Kaiblinger-Grujin Previous: Literatur

Eigene Publikationen

[1]
KAIBLINGER-GRUJIN G., KOSINA H., An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations, Proceedings International Workshop on Computational Electronics, (30. Oct.-2. Nov. 1995, Tempe, Arizona) p.25.
[2]
KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S., Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors, Abstracts 21. Condensed Matter Physics Meeting, (4.-7. Feb. 1997, Pakota Island, New Zealand), p.TA02.
[3]
KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S., Monte Carlo Simulation of Electron Transport in Doped Silicon, Proceedings High Performance Computing Asia 1997 Conference, (28. April-2. May 1997, Seoul, South Korea), pp.444-449.
[4]
KöPF CH., KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S., Influence of Dopant Species on Electron Mobility in InP, Proceedings International Conference on Indium Phosphide and Related Materials, (11.-15. May 1997, Hyannis, Cape Cod, MA), pp.280-283.
[5]
KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S.. Electron Mobility in Doped Semiconductors, Abstracts International Conference on Computational Physics, (2.-4. June 1997, Singapore), pp.30-31.
[6]
KAIBLINGER-GRUJIN G., KOSINA H., KöPF CH., SELBERHERR S., Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors Proceedings International Conference on Defects in Semiconductors, (21.-25. July 1997, Aveiro, Portugal), to be published in Materials Science Forum.
[7]
KOSINA H., KAIBLINGER-GRUJIN G., SELBERHERR S., A New Approach to Ionized-Impurity Scattering, Proceedings International Conference on Simulation of Semiconductor Processes and Devices, (8.-10. Sept. 1997, Cambridge, MA), pp. 205-208.
[8]
KöPF CH., KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S., Reexamination of Electron Mobility Dependence on Dopants in GaAs, Proceedings 27. European Solid-State Device Research Conference, (22-24. Sept. 1997, Stuttgart), pp. 304-307.
[9]
KAIBLINGER-GRUJIN G., KöPF CH., KOSINA H., SELBERHERR S., Dependence of Electron Mobility on Impurities in Compound Semiconductors, Proceedings 10. III-V Semiconductor Device Simulation Workshop, (16-18. Okt. 1997, Torino).
[10]
KOSINA H., KAIBLINGER-GRUJIN G., Modeling of Ionized Impurity Scattering in Silicon, to be published in Solid State Electronics.
[11]
KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S., A Universal Low-Field Mobility Model for Semiconductor Device Simulation, submitted to IEEE Transactions on Electron Devices.
[12]
KAIBLINGER-GRUJIN G., KOSINA H., SELBERHERR S., Influence of the Doping Element on the Electron Mobility in n-Silicon, submitted to Journal of Applied Physics.


next up previous
Next: Curriculum Vitae Up: Dissertation G. Kaiblinger-Grujin Previous: Literatur

Kaiblinger-Grujin Goran
1997-12-08