| BIB | ... | Blocked impurity band |
| BTE | ... | Boltzmann transport equation |
| BZ | ... | Brillouin zone |
| CMOS | ... | Complementary MOS |
| EPM | ... | Empirical pseudopotential method |
| FBMC | ... | Monte Carlo simulation based on full-band structure |
| FET | ... | Field-effect transistor |
| HH | ... | heavy hole |
| ITRS | ... | International Technology Roadmap for Semiconductors |
| IR | ... | Infrared |
| LH | ... | light hole |
| MC | ... | Monte Carlo |
| MOS | ... | Metal-oxide-semiconductor |
| MOSFET | ... | Metal-oxide-semiconductor field-effect transistor |
| SO | ... | split-off band |
| TCAD | ... | Technology Computer Aided Design |
| UTB | ... | Ultra-thin-body |
| VMC | ... | Vienna Monte Carlo simulator |