Contents

• 1. Introduction
• 2. Strain Related Effects on the Band Structure
  • 2.1 Definition of Stress
  • 2.2 Definition of Strain
  • 2.3 Stress-Strain Relations
    • 2.3.1 Notation of Planes and Directions in a Crystal
    • 2.3.2 Stress Applied Along Symmetry Directions
  • 2.4 Configuration of the Diamond Structure
  • 2.5 The Strained Diamond Structure
    • 2.5.1 The Point Group Symmetry Operations
  • 2.6 The Reciprocal Lattice
    • 2.6.1 The Relaxed Diamond Structure: Symmetry
    • 2.6.2 The Biaxially Strained Diamond Structure: Symmetry
    • 2.6.3 D Symmetry
    • 2.6.4 Symmetry
    • 2.6.5 Utilizing Symmetry Properties in Monte Carlo Simulation
  
  
• 3. The Semiclassical Transport Model
  • 3.1 The Equations of Motion
  • 3.2 The Boltzmann Transport Equation
  • 3.3 Scattering Mechanisms
    • 3.3.1 Phonon Scattering
    • 3.3.2 Ionized Impurity Scattering
    • 3.3.3 Impact Ionization
  
  
• 4. Monte Carlo Technique
  • 4.1 Random Numbers: Direct and Indirect Method
  • 4.2 Piecewise Constant Gamma Scheme
  • 4.3 Self-Scattering Scheme for Ionized Impurity Scattering
  • 4.4 Selecting a k-vector after Scattering
  • 4.5 Meshing of the Brillouin Zone
  • 4.6 Calculating the DOS
  • 4.7 Precalculated Values related to the Mesh Structure
  • 4.8 Selfconsistent Monte Carlo Scheme
  
  
• 5. Results
  • 5.1 The Conduction Band Structure of Strained Si
    • 5.1.1 Valley splitting
    • 5.1.2 Effective mass change
  • 5.2 Low Field Electron Mobility of Strained Si
  • 5.3 High Field Electron Mobility of Strained Si
  • 5.4 The Valence Band Structure of Strained Ge
    • 5.4.1 Band splitting
    • 5.4.2 Effective mass change
  • 5.5 Low Field Mobility of Holes in Strained Ge
  • 5.6 High Field Mobility of Holes in Strained Ge
  
  
• 6. Simulation of Blocked Impurity Band Devices
  • 6.1 Introduction
  • 6.2 Operation of BIB Detectors
  • 6.3 Hopping Conduction
  • 6.4 Monte Carlo Simulation of BIB Detectors
    • 6.4.1 Neutral Impurity Scattering
    • 6.4.2 Non-Markovian Impact Ionization Model
  • 6.5 Results
    • 6.5.1 Electrostatic Field
    • 6.5.2 BIB Device as a Single Photon Counter
  
  
• 7. Summary and Conclusions
• Bibliography
• Own Publications