In a MOSFET, the effect of surface scattering of the inversion layer
charges near the Si/SiO
interface dominates other scattering mechanisms
influence on carrier mobilities. Furthermore, velocity saturation which is
caused by carriers interactions with lattice vibrations can also reduce
mobility. Accurate inversion layer mobility modeling is essential
in order to obtain good agreement between simulated and experimental
MOSFET I-V and C-V characteristics [112][47][41].
In this section, the calibration of the mobility model equation
parameters used in MINIMOS [92] is described. First, the model
equations showing the mobility dependence on the vertical and lateral fields
in a device are presented. The tuning of the model adjustable parameters
to P-channel MOSFET data using nonlinear least squares optimization is
discussed next. Finally, results that illustrate the good agreement achieved
between simulated and experimental electrical characteristics for several
gate lengths are shown to illustrate the validity of the extracted
parameters.