Literatur

Aga93

A.M. AGARWAL AND S.T. DUNHAM.
Determination of Silicon Point Defect Properties from Oxidation Enhanced Diffusion of Buried Layers.
Appl.Phys.Lett., Vol. 63, No. 4, 1993, pp. 800-802.

Ain89

M. AINSWORTH, J.Z. ZHU, A.W. CRAIG, AND O.C. ZIENKIEWICZ.
Analysis of the Zienkiewicz-Zhu A-Posteriori Error Estimator in the Finite Element Method.
Int.J.Numer.Meth.Eng., Vol. 28, No. 9, 1989, pp. 2161-2174.

Ant78

D.A. ANTONIADIS, A.G. GONZALES, AND R.W. DUTTON.
Boron in Near-Intrinsic $\langle 100\rangle$ and $\langle 111\rangle$ Silicon under Inert and Oxidizing Ambients-Diffusion and Segregation.
J.Electrochem.Soc., Vol. 125, No. 5, 1978, pp. 813-819.

Ass94

SEMICONDUCTOR INDUSTRY ASSOCIATION.
The National Technology Roadmap for Semiconductors, 1994.

Bab78

I. BABUSKA AND W.C. RHEINBOLDT.
A-Posteriori Error Estimates for the Finite Element Method.
Int.J.Numer.Meth.Eng., Vol. 12, No. 10, 1978, pp. 1597-1615.

Bab81

I. BABUSKA AND M.R. DORR.
Error Estimates for the Combined h and p Versions of Finite Element Method.
Numer.Math., Vol. 37, 1981, pp. 252-277.

Ban81

R.E. BANK AND D.J. ROSE.
Global Approximate Newton Methods.
Numer.Math., Vol. 37, 1981, pp. 279-295.

Ban97

R.E. BANK AND R.K. SMITH.
Mesh Smoothing Using A-Posteriori Error Estimates.
SIAM J.Numer.Anal., Vol. 34, No. 3, 1997, pp. 979-997.

Boh95a

W. BOHMAYR, A. BURENKOV, J. LORENZ, H. RYSSEL, AND S. SELBERHERR.
Trajectory Split Method for Monte Carlo Simulation of Ion Implantation.
IEEE Trans.Semiconductor Manufacturing, Vol. 8, No. 4, 1995, pp. 402-407.

Boh95b

W. BOHMAYR AND S. SELBERHERR.
Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners.
In Proceedings: Int. Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, 1995, pp. 104-107.

Bos96

F.J. BOSSEN AND P.S. HECKBERT.
A Pliant Method for Anisotropic Mesh Generation.
In Proceedings: 5th International Meshing Roundtable, 1996, pp. 63-74.

Bra95

H. BRACHT, N.A. STOLWIJK, AND H. MEHRER.
Properties of Intrinsic Point Defects in Silicon Determined by Zinc Diffusion Experiments under Nonequilibrium Conditions.
Physical Review B, Vol. 52, No. 23, 1995, pp. 16542-16560.

Cha96

H.S. CHAO, P.B. GRIFFIN, J.D. PLUMMER, AND C.S. RAFFERTY.
The Dose, Enery, and Time Dependence of Silicon Self-Implantation Induced Transient Enhanced Diffusion at 750$^\circ$C.
Appl.Phys.Lett., Vol. 69, No. 14, 1996, pp. 2113-2115.

Con90

P. CONTI, N. HITSCHFELD, AND W. FICHTNER.
$\Omega$ - An Octree-Based Mixed Element Grid Allocator for Adaptive 3D Device Simulation.
In Proceedings: Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD III, Honolulu, 1990, pp. 25-26.

Dun93

S.T. DUNHAM.
Growth Kinetics of Disk-Shaped Extended Defects with Constant Thickness.
Appl.Phys.Lett., Vol. 63, No. 4, 1993, pp. 464-466.

Dun95

S.T. DUNHAM AND C.D. WU.
Atomistic Models of Vacancy-Mediated Diffusion in Silicon.
J.Appl.Phys., Vol. 78, No. 4, 1995, p. 2362.

Eag94

D.J. EAGLESHAM, P.A. STOLK, H.J. GOSSMANN, AND J.M. POATE.
Implantation and Transient B Diffusion in Si: The Source of Interstitials.
Appl.Phys.Lett., Vol. 65, No. 18, 1994, pp. 2305-2307.

Fah89

P.M. FAHEY, P.B. GRIFFIN, AND J.D. PLUMMER.
Point Defects and Dopant Diffusion in Silicon.
Review of Modern Physics, Vol. 61, No. 2, 1989, pp. 289-384.

Fai81

R.B. FAIR.
Concentration Profiles of Diffused Dopants.
In: Impurity Doping Processes in Silicon, Ed. by F.F.Y. WANG. North-Holland, Amsterdam, 1981, pp. 315-442.

Fis94a

C. FISCHER.
Bauelementsimulation in einer computergestützten Entwurfsumgebung.
Dissertation, Technische Universität Wien, 1994.

Fis94b

MINIMOS 6 User's Guide.
C. FISCHER, P. HABAfont size=-1>VS, O. HEINREICHSBERGER, H. KOSINA, PH. LINDORFER, P. PICHLER, H. PöTZL, C. SALA, A. SCHüTZ, S. SELBERHERR, M. STIFTINGER, AND M. THURNER.
Institut für Mikroelektronik, Technische Universität Wien, Austria, March 1994.

Fis94c

C. FISCHER AND S. SELBERHERR.
Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners.
In Proceedings: Int. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD V, Honolulu, 1994, pp. 123-126.

Fle96

P. FLEISCHMANN AND S. SELBERHERR.
A New Approach to Fully Unstructured Three-dimensional Delaunay Mesh Generation with Improved Element Quality.
In Proceedings: International Conference on Simulation of Semiconductor Processes and Devices, Tokyo, Japan, 1996, Business Center for Academic Societies Japan, pp. 129-130.

Gen97

A.H. GENCER AND S.T. DUNHAM.
A Predictive Model for Transient Enhanced Diffusion Based on Evolution of {311} Defects.
J.Appl.Phys., Vol. 81, No. 2, 1997, pp. 631-636.

Gil89

M.D. GILES.
Defect-Coupled Diffusion at High Concentrations.
IEEE Trans.Computer-Aided Design, Vol. 8, No. 5, 1989, pp. 460-467.

Gri95

P.B. GRIFFIN, S.W. CROWDER, AND J.M. KNIGHT.
Dose Loss in Phosphorus Implants due to Transient Diffusion and Interface Segregation.
Appl.Phys.Lett., Vol. 67, No. 4, 1995, pp. 482-484.

Hal95

S. HALAMA, CH. PICHLER, G. RIEGER, G. SCHROM, T. SIMLINGER, AND S. SELBERHERR.
VISTA--User Interface, Task Level, and Tool Integration.
IEEE Trans.Computer-Aided Design, Vol. 14, No. 10, 1995, pp. 1208-1222.

Hei77

J.C. HEINRICH, P.S. HUYAKORN, O.C. ZIENKIEWICZ, AND A.R. MITCHELL.
An Upwind Finite Element Scheme for Two Dimensional Convective Transport Equations.
Int.J.Numer.Meth.Eng., Vol. 11, No. 1, 1977, pp. 131-144.

Hei93

O. HEINREICHSBERGER, M. THURNER, AND S. SELBERHERR.
Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation.
In: Selberherr et al. [Sel93], pp. 85-88.

Hit93

N. HITSCHFELD, P. CONTI, AND W. FICHTNER.
Mixed Element Trees: A Generalization of Modified Octrees for the Generation of Meshes for the Simulation of Complex 3-D Semiconductor Device Structures.
IEEE Trans.Computer-Aided Design, Vol. 12, No. 11, 1993, pp. 1714-1725.

Hob97

G. HOBLER, C.S. RAFFERTY, AND S. SENKADER.
A Model of {311} Defect Evolution Based on Nucleation Theory.
In Proceedings: International Conference on Simulation of Semiconductor Processes and Devices, Cambridge, Massachusetts, 1997, pp. 73-76.

Hor91

A. HORI, S. KAMEYAMA, M. SEGAWA, H. SHIMOMURA, AND H. OGAWA.
A Self-Aligned Pocket Implantation (SPI) Technology for $0.2\mu$m-Dual Gate CMOS.
In Proceedings: Int.Electron Devices Meeting, 1991, pp. 641-644.

Hu68

S.M. HU AND S. SCHMIDT.
Interactions in Sequential Diffusion Processes in Semiconductors.
J.Appl.Phys., Vol. 39, No. 9, 1968, pp. 4272-4283.

Hu74

S.M. HU.
Formation of Stacking Faults and Enhanced Diffusion in the Oxidation of Silicon.
J.Appl.Phys., Vol. 45, No. 4, 1974, pp. 1567-1573.

Hwa96a

H. HWANG, D.-H. LEE, AND J.M. HWANG.
Degradation of MOSFETs Drive Current Due to Halo Ion Implantation.
In Proceedings: Int.Electron Devices Meeting, 1996, pp. 567-570.

Hwa96b

H. HWANG, D.H. LEE, J.-G. AHN, J.S. BYUN, AND D. YANG.
Effect of Channeling of Halo Ion Implantation on Threshold Voltage Shift of Metal Oxide Semiconductor Field-Effect Transistor.
Appl.Phys.Lett., Vol. 68, No. 7, 1996, pp. 938-939.

Jai75

R.K. JAIN AND R.J. VANOVERSTRAETEN.
Accurate Theoretical Arsenic Diffusion Profiles in Silicon from Processing Data.
J.Electrochem.Soc., Vol. 122, No. 4, 1975, pp. 552-557.

Jim96

P.K. JIMACK.
A Best Approximation Property of the Moving Finite Element Method.
SIAM J.Numer.Anal., Vol. 33, No. 6, 1996, pp. 2286-2302.

Joe89

B. JOE.
Three-Dimensional Triangulations from Local Transformations.
SIAM J.Sci.Stat.Comput., Vol. 10, No. 4, 1989, pp. 718-741.

Joe91

B. JOE.
Construction of Three-Dimensional Delaunay Triangulations Using Local Transformations.
Computer Aided Geometric Design, Vol. 8, No. 2, 1991, pp. 123-142.

Joe95

B. JOE.
Construction of Three-Dimensional Improved-Quality Triangulations Using Local Transformations.
SIAM J.Sci.Comput., Vol. 16, No. 6, 1995, pp. 1292-1307.

Jop93

W. JOPPICH AND S. MIJALKOVIC.
Multigrid Methods for Process Simulation.
Springer, Wien, 1993.

Lee68

H.B. LEE.
An Implementation of Gaussian Elimination for Sparse Systems of Linear Equations.
In Proceedings: Sparse Matrices Symp., 1968, IBM, pp. 75-83.

Liu94

A. LIU AND B. JOE.
Relationship Between Tetrahedron Shape Measures.
BIT, Vol. 34, 1994, pp. 268-287.

Liu95

A. LIU AND B. JOE.
Quality Local Refinement of Tetrahedral Meshes Based on Bisection.
SIAM J.Sci.Comput., Vol. 16, No. 6, 1995, pp. 1269-1291.

Man80

M.M. MANDURAH, K.C. SARASWAT, AND C.R. HELMS.
Dopant Segregation in Polycrystalline Silicon.
J.Appl.Phys., Vol. 51, No. 11, 1980, pp. 5755-5763.

Mil94

J.J.H. MILLER AND S. WANG.
A Tetrahedral Mixed Finite Element Method for the Stationary Semiconductor Continuity Equations.
SIAM J.Numer.Anal., Vol. 31, No. 1, 1994, pp. 196-216.

Mor54

F.J. MORIN AND J.P. MAITA.
Electrical Properties of Silicon Containing Arsenic and Boron.
Physical Review, Vol. 96, No. 1, 1954, p. 28.

Ons31

L. ONSAGER.
Reciprocal Relations in Irreversible Processes II.
Physical Review, Vol. 38, December 1931, pp. 2265-2279.

Orl89

M. ORLOWSKI.
New Model for Dopant Redistribution at Interfaces.
Appl.Phys.Lett., Vol. 55, No. 17, 1989, pp. 1762-1764.

Raf96

C.S. RAFFERTY, G.H. GILMER, M. JARAIZ, D. EAGLESHAM, AND H.J. GOSSMANN.
Simulation of Cluster Evaporation and Transient Enhanced Diffusion in Silicon.
Appl.Phys.Lett., Vol. 68, No. 17, 1996, pp. 2395-2397.

Saa90

Y. SAAD.
SPARSKIT: A Basic Tool Kit for Sparse Matrix Computations.
Technical Report, RIACS, NASA Ames Research Center, Moffett Field, CA 94035, May 1990.

Sch69

D.L. SCHARFETTER AND H.K. GUMMEL.
Large-Signal Analysis of a Silicon Read Diode Oscillator.
IEEE Trans.Electron Devices, Vol. ED-16, 1969, pp. 64-77.

Sch81

S.A. SCHWARZ, R.W. BARTON, C.P. HO, AND C.R. HELMS.
Studies of Phosphorus Pile-Up at the Si-SiO2 Interface Using Auger Sputtering Profiling.
J.Electrochem.Soc., Vol. 128, No. 5, 1981, pp. 1101-1106.

Sel93

Ed. by S. SELBERHERR, H. STIPPEL, AND E. STRASSER.
Simulation of Semiconductor Devices and Processes, Wien, 1993, Vol. 5, Springer.

Sha75

D. SHAW.
Self- and Impurity Diffusion in Ge and Si.
Phys.Stat.Sol., Vol. 72, 1975, pp. 11-39.

Shi89

N. SHIGYO, T. WADA, AND S. YASUDA.
Discretization Problem for Multidimensional Current Flow.
IEEE Trans.Computer-Aided Design, Vol. 8, No. 10, 1989, pp. 1046-1050.

Sim94

T. SIMLINGER, C. FISCHER, R. DEUTSCHMANN, AND S. SELBERHERR.
MINIMOS NT - A Hydrodynamic Simulator for High Electron Mobility Transistors.
In Proceedings: 8th GaAs Simulation Workshop, Duisburg, 1994.

Str93a

E. STRASSER AND S. SELBERHERR.
A General Simulation Method for Etching and Deposition Processes.
In: Selberherr et al. [Sel93], pp. 357-360.

Str93b

E. STRASSER, K. WIMMER, AND S. SELBERHERR.
A New Method for Simulation of Etching and Deposition Processes.
In Proceedings: Int. Workshop on VLSI Process and Device Modeling, Nara, Japan, 1993, pp. 54-55.

Str94

E. STRASSER.
Simulation von Topographieprozessen in der Halbleiterfertigung.
Dissertation, Technische Universität Wien, 1994.

Tan82

T.Y. TAN AND U.M. GöSELE.
Oxidation-Enhanced or Retarded Diffusion and the Growth or Shrinkage of Oxidation-Induced Stacking Faults in Silicon.
Appl.Phys.Lett., Vol. 40, No. 7, 1982, pp. 616-619.

TMA95

TMA TSUPREM-4, Two-Dimensional Process Simulation Program, Version 6.2.
TECHNOLOGY MODELING ASSOCIATES, INC.
Palo Alto, CA, June 1995.

vdV93

H.A. VAN DER VORST, D.R. FOKKEMA, AND G.L. SLEIJPEN.
Further Improvements in Nonsymmetric Hybrid Iterative Methods.
In: Selberherr et al. [Sel93], pp. 89-92.

Vem81

V. VEMURI AND W.J. KARPLUS.
Digital Computer Treatment of Partial Differential Equations.
Prentice-Hall, New Jersey, 1981.

Zhu90

J.Z. ZHU AND O.C. ZIENKIEWICZ.
Superconvergence Recovery Technique and A-Posteriori Error Estimators.
Int.J.Numer.Meth.Eng., Vol. 30, 1990, pp. 1321-1339.

Zie87

O.C. ZIENKIEWICZ AND J.Z. ZHU.
A Simple Error Estimator and Adaptive Procedure for Practical Engineering Analysis.
Int.J.Numer.Meth.Eng., Vol. 24, No. 2, 1987, pp. 337-357.

Zie89

O.C. ZIENKIEWICZ AND R.L. TAYLOR.
Basic Formulation and Linear Problems, fourth edition, Vol. 1 of The Finite Element Method.
McGraw-Hill, London, 1989.

Zie91

O.C. ZIENKIEWICZ AND R.L. TAYLOR.
Solid and Fluid Mechanics, Dynamics and Non-linearity, fourth edition, Vol. 2 of The Finite Element Method.
McGraw-Hill, London, 1991.