Kurte

Bikkirdin tknolojy CMOS xerke rrberry berbestgel binerrety fzk abr bibt-ewe. Zdebn dawakar bo amre lktironyekan be nirx guncaw lhatyy perepd-iraw, gerran bedway emkgel niw tknolojy cgirewey hnawete ara tak cgey CMOS bigrinewe yan lankem alkar bin. Hz ledest lekat “standby” da behoy dizekirdin buwete milmilanyek serek bo xulgekan CMOS-VLSI em serdeme. Hnan cgryet (non-volatility) bonaw xulgekan CMOS rrgeareyek dillxoşkere bo zallbn beser em kşe da. Betaybet, serhelldan amrgel brgey cgr wek sw bergir-binema brge-bergir (memory-resistor; memristor), ke berbijrgelk dillxoşker-in bo dahaty brgey gişt, zor serincrrakşe. Ciya le brgey cgr, ew amrgele herweha bellnder kellkgel niwn ewş le rrgey dabnkirdin taybetmendgel niw le jimrkar herweha le hestpkirdin da ke le sstimgel nert da leberdest da nn.

Lem tze da, sstime mentiqye doxhellgirekan (stateful logic systems) le astekan amr (device), xulge (circuit) m'mar (architecture) da lekollneweyan leser kirawe. Mentiq doxhellgir detwant amre “memristive”ekan hawkat wek brgey cgr (flip-flop) herweha yekey jimrkar (derwazey mentiq) bekar bihnt. Kewate, be şwazk sirşt mentiq-naw-brgey cgr be hz “zero-standby” be dest dexat derkey drkewtinewe le m'mary “Von Neumann” dekatewe. Cige le kellkgel mentiq brge, herweha kellkgel “analog” hestpkirdin cy hwain. Taybetmendye nawazekan amre “memristive”ekan bo nasandin nexşe niwkan hestpkrdin barge (charge)-binema lşaw (flux)-binema bekar hnrawin.

Beboney bergegirtin bsinr tiwanayy xoguncandin letek CMOS, STT-MTJ (spin-transfer torque magnetic tunnel junction) wek amrk zor pesindkiraw bo mentiq doxhellgir pşniyar kirawe. Herweha, nşan dirawe ke be pewaney amrekan dke (bo wne “memristor” “titanium dioxide”-binema), derwaze mentiqyekan STT-MTJ-binema, behoy seqamgry dlayeney mugnatk, h seryekkewtineweyek helley giwastinewey dox (state drift error) nşan naden. Kewate, kşey pwst be xulgekan niwkirdinewe le xulge mentiqye doxhellgirekan areser dekrt. Derwazeyek mentiqy “implication” niw leser binemay tknolojy STT-MTJ topolojy xulgey ke be tez kontiroll dekrn pşniyar kirawe. Modlsazy mitmanepkirawyet şkary m'marye mentiqye doxhellgirekan xirawnete beraw bo baştirkrdin hellsengandin derwazegel mentiqy doxhellgir ciyawaz. Selmnrawe ke derwazey “implication” pşniyarkiraw be pwergel mitmanepkiraw lekarkirdin wize serkewttire le baştirn derwazekan henke. Bellam, nahawcyyek sirşty em derwazeye debte hoy sinrdarkirdin beraw bo “fan-out” cgr herweha kemkirdin sazgary jimrkaryekan. Xoşbextane behoy yekxistin sakar MTJ leser xulgey CMOS, rrgeark jrane pşkeş kirawe tak kşey nahawcyet areser bikat be bekarhnan transistor-ekan xanegel yek transistor/yek MTJ (1T/1MTJ) wek bergirk ke be volltaj kontiroll bikrt. Leber ewey ke xaney 1T/1MTJ xişt binerretye bo tknolojy STT-MRAM (STT-magnetoresistive random-access memory) ke nrdirawete bazarrş, piyadesazy pşniyarkiraw gişitgr debt bo ast m'mary mentiqy STT-MRAM- doxhellgir. Em m'marye mentiqye le rriwangey jimrkaryewe tekmle, pkhateyek xulgeyy sakar heye, jimrkar le şwaz nawey der dehnt, kşey “fan-out” areser dekat, pwst be komelle xulgey nawinc derrewntewe. Herweha, tiwanayy jimrkary hawrk derrexsnt. Qazancekan mentiq doxhellgir MRAM-binema le ast cray nexşekan mentiq pşan dirawe le ast xulge da le rrgey leberawgirtin piyadesazy xulgegel tewawkoker nwkoker cgr selmnrawe.

Herweha, nexşe niwkan hestpkirdin barge-binema lşaw-binema lem tze da pşniyar kirawin ewş le rrgey bekarhnan tiwanayy nawazey amr “memristive” lebo tomarkrdin smay mjyy tez volltaj. Şwaz hestpkirdin “memristive” pwerekan bargegir, hander, hz kem dekatewe ta ast pwerk bergiry sade. Be bekarhnan taybetmendyekan cimucll dwar pawan ke bestirawetewe be şikll hendesey “memristor” spintironic, tiwanayy hestpkirdin bargegiry barge-binema handery lşaw-binema pşan dedr, ewş le katk da ke d şikll ciyawaz “memristor” spintironic bekar dehnrn. Şwaz hestpkirdin “memristive” herweha bo pwan hander bargegiry bigorr-bepy-kat şiyawe kewate lhatuyyek mezin pşan dedat bo sazkirdin hestpker “memristive” hander-binema (inductive) bargegir-binema (capacitive).