5.2.2 Device Simulation

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5.2.2 Device Simulation

After process simulation, several hundred device simulations are performed to created the I-V and charge data tables. The device simulator MINIMOS is used to generate for the different bias conditions data plots as those presented in Figure 5.12 and Figure 5.13 for the drain currents and terminal charges, respectively.

**Figure 5.12:** Drain current as function of drain-source voltage (at several $V_{gs}$ ).
$\begin{figure} \vspace{0.5cm} \centerline{\epsfig{file=DSnmosIV.eps,width=0.705\linewidth}} \vspace{-0.5cm} \vspace{0.2cm}\end{figure}$

**Figure 5.13:** Terminal charges vs. gate voltage.
$\begin{figure} \vspace{0.25cm} \centerline{\hspace{0.45cm}\epsfig{file=DScharge.eps,width=0.65\linewidth}} \vspace{-0.5cm} \vspace{0.2cm}\end{figure}$

Rui Martins
1999-02-24