In this chapter several electromigration simulation examples according to the model discussed in Chapter 3 are presented. First, the materials considered in the simulations are introduced and the corresponding set of parameters used by the models are defined. Then, the model calibration and verification by comparing it to the models described in Chapter 2 is presented. The vacancy dynamics behavior is analyzed, neglecting first the mechanical stress, which is incorporated later to clearly show the importance of the stress effect on the electromigration failure development. Also, the influence of the mechanical stress in producing anisotropic diffusivity and its effect on material transport in a dual-damascene interconnect structure is studied. Then, the importance of introducing the fast diffusivity paths into the modeling framework is shown. This enables to explain several features of failure development commonly observed in experiments, for which the simple effective diffusion models cannot cope with. Finally, the role of the copper grain distribution on electromigration lifetimes of bamboo-like interconnect lines is investigated.