| T | temperature |
| m0 | electron rest mass |
| a | lattice constant |
| c | speed of light |
| U | confinement potential |
| V | bulk crystal potential |
 | Hamiltonian |
| σx,σy,σz | Pauli matrices |
| t | film thickness |
| K | wave vector |
| EF | Fermi energy |
| T↑(↓) | spin-up (spin-down) transmission probability |
| G | conductance |
| P | spin polarization |
| B | magnetic field |
| g | LandŽe factor |
| z | strength of the Schottky barriers |
| h0 | exchange splitting energy |
| αR | strength of the spin-orbit interaction (Rashba-like) |
| β | strength of the spin-orbit interaction (Dresselhaus-like) |
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| μB | Bohr magneton |
| δEC | subband mismatch between ferromagnetic region and channel |
| mf* | effective mass for the ferromagnetic region |
| ms* | effective mass for the semiconductor region |
| τ | momentum (spin) lifetime |
| εxy | shear strain component |
| mt | transversal silicon effective mass |
| ml | longitudinal silicon effective mass |
| θ | polar angle defining the orientation of the injected spin |
| φ | azimuth angle defining the orientation of the injected spin |
| ϵ | dielectric permittivity |
| L | autocorrelation length |
| Δ | mean square value of the surface roughness fluctuations |
| E | electron energy |
| ρ | density |
| ΔEC | conduction band offset |
| ΔΓ | splitting at the Γ-point |
| ΔSO | spin-orbit splitting |
| k0 | position of the valley minimum relative to the X-point in unstrained silicon |
| k0Γ | position of the valley minimum relative to the Γ-point in unstrained silicon |
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| ωop | frequency of the optical phonons |
| D | shear strain deformation potential |
| Ξ | acoustic deformation potential |
| Dop | optic deformation potential |
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