T  temperature 
m_{0}  electron rest mass 
a  lattice constant 
c  speed of light 
U  confinement potential 
V  bulk crystal potential 
 Hamiltonian 
σ_{x},σ_{y},σ_{z}  Pauli matrices 
t  film thickness 
K  wave vector 
E_{F }  Fermi energy 
T_{↑(↓)}  spinup (spindown) transmission probability 
G  conductance 
P  spin polarization 
B  magnetic field 
g  LandŽe factor 
z  strength of the Schottky barriers 
h_{0}  exchange splitting energy 
α_{R}  strength of the spinorbit interaction (Rashbalike) 
β  strength of the spinorbit interaction (Dresselhauslike) 
 
μ_{B}  Bohr magneton 
δE_{C}  subband mismatch between ferromagnetic region and channel 
m_{f}^{*}  effective mass for the ferromagnetic region 
m_{s}^{*}  effective mass for the semiconductor region 
τ  momentum (spin) lifetime 
ε_{xy}  shear strain component 
m_{t}  transversal silicon effective mass 
m_{l}  longitudinal silicon effective mass 
θ  polar angle defining the orientation of the injected spin 
φ  azimuth angle defining the orientation of the injected spin 
ϵ  dielectric permittivity 
L  autocorrelation length 
Δ  mean square value of the surface roughness fluctuations 
E  electron energy 
ρ  density 
ΔE_{C}  conduction band offset 
Δ_{Γ}  splitting at the Γpoint 
Δ_{SO}  spinorbit splitting 
k_{0}  position of the valley minimum relative to the Xpoint in unstrained silicon 
k_{0Γ}  position of the valley minimum relative to the Γpoint in unstrained silicon 

ω_{op}  frequency of the optical phonons 
D  shear strain deformation potential 
Ξ  acoustic deformation potential 
D_{op}  optic deformation potential 



