Next: List of Acronyms Up: Dissertation Palankovski Previous: List of Tables

List of Symbols

$\Delta$ ... step, difference, change

$\Phi_\mathrm {ms}$ ... metal workfunction difference potential

$\alpha$ ... exponent

$\beta$ ... exponent

$\beta_{n}$ , $\beta_{p}$ , $\beta_{\nu}$ ... electron, hole, and general exponents in mobility models

$\gamma$ ... exponent in mobility models

$\delta E_{\nu}$ ... barrier height lowering

$\varepsilon$ ... dielectric constant

$\varepsilon_{\mathrm{s}}$ , $\varepsilon_{\mathrm{ins}}$ ... dielectric constant of semiconductor, insulator

$\varepsilon_{\mathrm{r}}^{\mathrm{}}$ ... relative dielectric constant

$\kappa_{\mathrm{L}}$ ... lattice thermal conductivity

$\kappa_{n}, \kappa_{p}$ ... thermal conductivity of electron and hole gas

$\mu_{\nu}$ ... mobility of carrier type ${\nu}$

$\mu^{\mathrm{L}}_{\nu}$ ... mobility due to lattice scattering

$\mu^{\mathrm{LI}}_{\nu}$ ... mobility due to lattice and impurity scattering

$\mu^{\mathrm{LIS}}_{\nu}$ ... mobility due to lattice, impurity, and surface scattering

$\mu^{\mathrm{LISF}}_{\nu}$ ... mobility including lattice, impurity, surface scattering, and high-field reduction

$\mu^{\mathrm{LIST}}_{\nu}$ ... mobility including lattice, impurity, surface scattering, and high-temperature reduction

$\mu_{n}$ , $\mu_{p}$ ... electron and hole mobilities

$\rho_{\mathrm{L}}$ ... mass density

$\sigma_\mathrm {s}$ ... surface (interface) charge density

$\sigma_\mathrm {ox}$ ... oxide conductivity

$\sigma_{\mathrm{T},n}$ , $\sigma_{\mathrm{T},p}$ ... trap capture cross sections for electrons and holes

$\tau_{n}$ , $\tau_{p}$ ... recombination lifetimes for electrons and holes

$\tau_{\epsilon,n}$ , $\tau_{\epsilon,p}$ , $\tau_{\epsilon,\nu}$ ... energy relaxation times for electrons, holes, and general carrier type

$\varphi_{\mathrm{s}}$ ... semiconductor contact potential

$\varphi_{\mathrm{m}}$ ... metal quasi-Fermi level

$\varphi_n$ , $\varphi_p$ ... quasi-Fermi potentials for electrons and holes

$\psi$ ... electrostatic potential

$\psi_{\mathrm{bi}}$ ... built-in potential

... net doping concentration

... bandgap bowing parameter

$C_\mu$ ... mobility bowing parameter

$C_\mathrm {m,\nu}$ ... relative carrier mass bowing parameter

$\mathbf{D}$ ... dielectric flux

$\mathbf{E}$ ... local electric field

$\mathbf{E}_s$ ... local electric field in semiconductor

$\mathbf{E}_{ins}$ ... local electric field in insulator

$E_{\perp 2}$ ... electric field orthogonal to the interface

... local band edge energy for electrons or holes

$E_{C}$ ... local band edge energy for electrons

$E_{\mathrm{g}}$ ... bandgap energy

$E_{\mathrm{g,0}}$ , $E_{\mathrm{g,300}}$ ... bandgap energy at 0 K, and at 300 K

$E_{\mathrm{i}}$ ... intrinsic Fermi level

$E_{\mathrm{off}}$ ... energy offset

$E_{V}$ ... valence band energy

$\mathrm {E}_{\mathrm{w}}$ ... workfunction energy difference

$F_{n}$ , $F_{p}$ ... driving force for electrons and holes

... heat generation

$I_\mathrm {E}$ , $I_\mathrm {B}$ , $I_\mathrm {C}$ ... emitter, base, collector currents

$\mathbf{J}_n$ , $\mathbf{J}_p$ ... electron and hole current densities

$M_{C}$ ... valley degeneracy factor of the conduction band

... number of electrons of a given chemical element

$N_\mathrm {A}$ ... acceptor doping concentration

$N_{C}$ ... effective density of states for electrons

$N_{C,0}$ ... effective density of states for electrons evaluated at reference temperature

$N_\mathrm {D}$ ... donor doping concentration

$N_{\mathrm{T}}$ ... trap density

$N_{V}$ ... effective density of states for holes

$N_{V,0}$ ... effective density of states for holes evaluated at reference temperature

... total charge in the device

... net recombination rate

$R^{\mathrm{AU}}$ ... Auger recombination rate

$R^{\mathrm{BB}}$ ... band to band tunneling recombination rate

$R^{\mathrm{II}}$ ... impact ionization recombination rate

$R^{\mathrm{SRH}}$ ... SRH net recombination rate

... global thermal resistance

$R_{\mathrm{T}}$ ... thermal resistance

$S_{n}$ , $S_{p}$ ... surface recombination velocities for electrons and holes

$\mathbf{S}_n$ , $\mathbf{S}_p$ ... electron and hole heat flux density

$\mathbf{S}_{\mathrm{L}}$ ... lattice heat flux density

$T_{\mathrm{C}}$ ... contact temperature

$T_{{\mathrm{L}}}$ ... local lattice temperature

$T_{n}$ , $T_{p}$ ... electron and hole temperatures

$V_\mathrm {ox}$ ... voltage drop over the oxide at the polysilicon contact

$V_\mathrm {BE}$ , $V_\mathrm {CE}$ ... base-to-emitter voltage, collector-to-emitter voltage

, ... Coulomb potential

... atomic number of a given chemical element

$c_{{\mathrm{L}}}$ ... lattice heat capacity (specific heat)

$c_{n}$ , $c_{p}$ ... heat capacity of electron gas and hole gas

... thickness, length

$d_\mathrm {tun}$ ... effective tunneling length

$d_\mathrm {ox}$ ... oxide thickness

$f_{\mathrm{T}}$ ... current gain cutoff frequency

$f_{\mathrm{max}}$ ... maximum frequency of oscillation

... transconductance

... Planck constant

$\hbar$ ... reduced Planck constant

$\mathrm{k_B}$ ... Boltzmann constant

... gatelength

... free electron mass

$m_{n,p}$ ... relative masses of electrons and holes

$\mathbf{n}$ ... a normal vector

... electron concentration

... intrinsic concentration

... hole concentration

$\mathrm{q}$ ... elementary charge

... time

$v_{n,300}$ , $v_{p,300}$ ... thermal velocities at 300 K for electrons and holes

$v_{sat,n}$ , $v_{sat,p}$ ... electron and hole saturation velocities

... average electron energy

$y^{\mathrm{ref}}$ ... surface reference distance

Next: List of Acronyms Up: Dissertation Palankovski Previous: List of Tables

Vassil Palankovski
2001-02-28

$\Delta$	...	step, difference, change
$\Phi_\mathrm {ms}$	...	metal workfunction difference potential
$\alpha$	...	exponent
$\beta$	...	exponent
$\beta_{n}$ , $\beta_{p}$ , $\beta_{\nu}$	...	electron, hole, and general exponents in mobility models
$\gamma$	...	exponent in mobility models
$\delta E_{\nu}$	...	barrier height lowering
$\varepsilon$	...	dielectric constant
$\varepsilon_{\mathrm{s}}$ , $\varepsilon_{\mathrm{ins}}$	...	dielectric constant of semiconductor, insulator
$\varepsilon_{\mathrm{r}}^{\mathrm{}}$	...	relative dielectric constant
$\kappa_{\mathrm{L}}$	...	lattice thermal conductivity
$\kappa_{n}, \kappa_{p}$	...	thermal conductivity of electron and hole gas
$\mu_{\nu}$	...	mobility of carrier type ${\nu}$
$\mu^{\mathrm{L}}_{\nu}$	...	mobility due to lattice scattering
$\mu^{\mathrm{LI}}_{\nu}$	...	mobility due to lattice and impurity scattering
$\mu^{\mathrm{LIS}}_{\nu}$	...	mobility due to lattice, impurity, and surface scattering
$\mu^{\mathrm{LISF}}_{\nu}$	...	mobility including lattice, impurity, surface scattering, and high-field reduction
$\mu^{\mathrm{LIST}}_{\nu}$	...	mobility including lattice, impurity, surface scattering, and high-temperature reduction
$\mu_{n}$ , $\mu_{p}$	...	electron and hole mobilities
$\rho_{\mathrm{L}}$	...	mass density
$\sigma_\mathrm {s}$	...	surface (interface) charge density
$\sigma_\mathrm {ox}$	...	oxide conductivity
$\sigma_{\mathrm{T},n}$ , $\sigma_{\mathrm{T},p}$	...	trap capture cross sections for electrons and holes
$\tau_{n}$ , $\tau_{p}$	...	recombination lifetimes for electrons and holes
$\tau_{\epsilon,n}$ , $\tau_{\epsilon,p}$ , $\tau_{\epsilon,\nu}$	...	energy relaxation times for electrons, holes, and general carrier type
$\varphi_{\mathrm{s}}$	...	semiconductor contact potential
$\varphi_{\mathrm{m}}$	...	metal quasi-Fermi level
$\varphi_n$ , $\varphi_p$	...	quasi-Fermi potentials for electrons and holes
$\psi$	...	electrostatic potential
$\psi_{\mathrm{bi}}$	...	built-in potential
	...	net doping concentration
	...	bandgap bowing parameter
$C_\mu$	...	mobility bowing parameter
$C_\mathrm {m,\nu}$	...	relative carrier mass bowing parameter
$\mathbf{D}$	...	dielectric flux
$\mathbf{E}$	...	local electric field
$\mathbf{E}_s$	...	local electric field in semiconductor
$\mathbf{E}_{ins}$	...	local electric field in insulator
$E_{\perp 2}$	...	electric field orthogonal to the interface
	...	local band edge energy for electrons or holes
$E_{C}$	...	local band edge energy for electrons
$E_{\mathrm{g}}$	...	bandgap energy
$E_{\mathrm{g,0}}$ , $E_{\mathrm{g,300}}$	...	bandgap energy at 0 K, and at 300 K
$E_{\mathrm{i}}$	...	intrinsic Fermi level
$E_{\mathrm{off}}$	...	energy offset
$E_{V}$	...	valence band energy
$\mathrm {E}_{\mathrm{w}}$	...	workfunction energy difference
$F_{n}$ , $F_{p}$	...	driving force for electrons and holes
	...	heat generation
$I_\mathrm {E}$ , $I_\mathrm {B}$ , $I_\mathrm {C}$	...	emitter, base, collector currents
$\mathbf{J}_n$ , $\mathbf{J}_p$	...	electron and hole current densities
$M_{C}$	...	valley degeneracy factor of the conduction band
	...	number of electrons of a given chemical element
$N_\mathrm {A}$	...	acceptor doping concentration
$N_{C}$	...	effective density of states for electrons
$N_{C,0}$	...	effective density of states for electrons evaluated at reference temperature
$N_\mathrm {D}$	...	donor doping concentration
$N_{\mathrm{T}}$	...	trap density
$N_{V}$	...	effective density of states for holes
$N_{V,0}$	...	effective density of states for holes evaluated at reference temperature
	...	total charge in the device
	...	net recombination rate
$R^{\mathrm{AU}}$	...	Auger recombination rate
$R^{\mathrm{BB}}$	...	band to band tunneling recombination rate
$R^{\mathrm{II}}$	...	impact ionization recombination rate
$R^{\mathrm{SRH}}$	...	SRH net recombination rate
	...	global thermal resistance
$R_{\mathrm{T}}$	...	thermal resistance
$S_{n}$ , $S_{p}$	...	surface recombination velocities for electrons and holes
$\mathbf{S}_n$ , $\mathbf{S}_p$	...	electron and hole heat flux density
$\mathbf{S}_{\mathrm{L}}$	...	lattice heat flux density
$T_{\mathrm{C}}$	...	contact temperature
$T_{{\mathrm{L}}}$	...	local lattice temperature
$T_{n}$ , $T_{p}$	...	electron and hole temperatures
$V_\mathrm {ox}$	...	voltage drop over the oxide at the polysilicon contact
$V_\mathrm {BE}$ , $V_\mathrm {CE}$	...	base-to-emitter voltage, collector-to-emitter voltage
,	...	Coulomb potential
	...	atomic number of a given chemical element
$c_{{\mathrm{L}}}$	...	lattice heat capacity (specific heat)
$c_{n}$ , $c_{p}$	...	heat capacity of electron gas and hole gas
	...	thickness, length
$d_\mathrm {tun}$	...	effective tunneling length
$d_\mathrm {ox}$	...	oxide thickness
$f_{\mathrm{T}}$	...	current gain cutoff frequency
$f_{\mathrm{max}}$	...	maximum frequency of oscillation
	...	transconductance
	...	Planck constant
$\hbar$	...	reduced Planck constant
$\mathrm{k_B}$	...	Boltzmann constant
	...	gatelength
	...	free electron mass
$m_{n,p}$	...	relative masses of electrons and holes
$\mathbf{n}$	...	a normal vector
	...	electron concentration
	...	intrinsic concentration
	...	hole concentration
$\mathrm{q}$	...	elementary charge
	...	time
$v_{n,300}$ , $v_{p,300}$	...	thermal velocities at 300 K for electrons and holes
$v_{sat,n}$ , $v_{sat,p}$	...	electron and hole saturation velocities
	...	average electron energy
$y^{\mathrm{ref}}$	...	surface reference distance